Devices are described that include a multi-layered structure that is non-magnetic at room temperature, and which comprises alternating layers of Co and at least one other element E (that is preferably Al; or Al alloyed with Ga, Ge, Sn or combinations thereof). The composition of this structure is represented by Co.sub.1-xE.sub.x, with x being in the range from 0.45 to 0.55. The structure is in contact with a first magnetic layer that includes a Heusler compound. An MRAM element may be formed by overlying, in turn, the first magnetic layer with a tunnel barrier, and the tunnel barrier with a second magnetic layer (whose magnetic moment is switchable). Improved performance of the MRAM element may be obtained by placing an optional pinning layer between the first magnetic layer and the tunnel barrier.

An article comprising an electrodeposited aluminum alloy is described herein. The electrodeposited aluminum alloy comprises an average grain size less than approximately 1 micrometer. The electrodeposited aluminum alloy thickness is greater than approximately 40 micrometers. A ductility of the electrodeposited aluminum alloy is greater than approximately 2%.

An article comprising an electrodeposited aluminum alloy is described herein. The electrodeposited aluminum alloy comprises an average grain size less than approximately 1 micrometer. The electrodeposited aluminum alloy thickness is greater than approximately 40 micrometers. A ductility of the electrodeposited aluminum alloy is greater than approximately 2%.

A MnBi-based magnetic powder, which contains a hexagonal MnBi-based magnetic phase containing Sn and has a Sn content of 0.2 to 5 at % with respect to a sum of Mn, Bi and Sn, is provided. In addition, a bond magnet containing a kneaded product of this MnBi-based magnetic powder with a resin binder is provided. Furthermore, a MnBi-based metal magnet, which contains a hexagonal MnBi-based magnetic phase containing Sn and has a Sn content of 0.2 to 5 at % with respect to a sum of Mn, Bi and Sn, is provided.

A MnBi-based magnetic powder, which contains a hexagonal MnBi-based magnetic phase containing Sn and has a Sn content of 0.2 to 5 at % with respect to a sum of Mn, Bi and Sn, is provided. In addition, a bond magnet containing a kneaded product of this MnBi-based magnetic powder with a resin binder is provided. Furthermore, a MnBi-based metal magnet, which contains a hexagonal MnBi-based magnetic phase containing Sn and has a Sn content of 0.2 to 5 at % with respect to a sum of Mn, Bi and Sn, is provided.

Devices are described that include a multi-layered structure that is non-magnetic at room temperature, and which comprises alternating layers of Co and at least one other element E (such as Ga, Ge, and Sn). The composition of this structure is represented by Co.sub.1-xE.sub.x, with x being in the range from 0.45 to 0.55. The structure is in contact with a first magnetic layer that includes a Heusler compound. An MRAM element may be formed by overlying, in turn, the first magnetic layer with a tunnel barrier, and the tunnel barrier with a second magnetic layer (whose magnetic moment is switchable). Improved performance of the MRAM element may be obtained by placing a pinning layer between the first magnetic layer and the tunnel barrier.

Devices are described that include a multi-layered structure that is non-magnetic at room temperature, and which comprises alternating layers of Co and at least one other element E (such as Ga, Ge, and Sn). The composition of this structure is represented by Co.sub.1-xE.sub.x, with x being in the range from 0.45 to 0.55. The structure is in contact with a first magnetic layer that includes a Heusler compound. An MRAM element may be formed by overlying, in turn, the first magnetic layer with a tunnel barrier, and the tunnel barrier with a second magnetic layer (whose magnetic moment is switchable). Improved performance of the MRAM element may be obtained by placing a pinning layer between the first magnetic layer and the tunnel barrier.

A device including a near field transducer, the near field transducer including gold (Au) and at least one other secondary atom, the at least one other secondary atom selected from: boron (B), bismuth (Bi), indium (In), sulfur (S), silicon (Si), tin (Sn), hafnium (Hf), niobium (Nb), manganese (Mn), antimony (Sb), tellurium (Te), carbon (C), nitrogen (N), and oxygen (O), and combinations thereof; erbium (Er), holmium (Ho), lutetium (Lu), praseodymium (Pr), scandium (Sc), uranium (U), zinc (Zn), and combinations thereof; and barium (Ba), chlorine (Cl), cesium (Cs), dysprosium (Dy), europium (Eu), fluorine (F), gadolinium (Gd), germanium (Ge), hydrogen (H), iodine (I), osmium (Os), phosphorus (P), rubidium (Rb), rhenium (Re), selenium (Se), samarium (Sm), terbium (Tb), thallium (Th), and combinations thereof.

A device including a near field transducer, the near field transducer including gold (Au) and at least one other secondary atom, the at least one other secondary atom selected from: boron (B), bismuth (Bi), indium (In), sulfur (S), silicon (Si), tin (Sn), hafnium (Hf), niobium (Nb), manganese (Mn), antimony (Sb), tellurium (Te), carbon (C), nitrogen (N), and oxygen (O), and combinations thereof; erbium (Er), holmium (Ho), lutetium (Lu), praseodymium (Pr), scandium (Sc), uranium (U), zinc (Zn), and combinations thereof; and barium (Ba), chlorine (Cl), cesium (Cs), dysprosium (Dy), europium (Eu), fluorine (F), gadolinium (Gd), germanium (Ge), hydrogen (H), iodine (I), osmium (Os), phosphorus (P), rubidium (Rb), rhenium (Re), selenium (Se), samarium (Sm), terbium (Tb), thallium (Th), and combinations thereof.

A method comprising sintering a Mn and Bi powder compact at a first temperature for a first predetermined duration, based on the first temperature, and sintering the compact at a second temperature, less than the first temperature, for a second predetermined duration, greater than the first duration, is disclosed. The sintering at a first temperature for a first predetermined duration generates a predetermined MnBi LTP transition driving force to decrease a formation energy barrier for transition to MnBi LTP. Sintering the compact at the second temperature for the second predetermined duration forms a magnet containing the MnBi LTP.