A hot stamped steel includes a base material, a plated layer that is formed on a surface of the base material, and an oxide film that is formed on a surface of the plated layer; chemical composition of the plated layer contains 20.00 to 45.00 mass % of Al, 10.00 to 45.00 mass % of Fe, 4.50 to 15.00 mass % of Mg, 0.10 to 3.00 mass % of Si, 0.05 to 3.00 mass % of Ca, 0 to 0.50 mass % of Sb, 0 to 0.50 mass % of Pb, 0 to 1.00 mass % of Cu, 0 to 1.00 mass % of Sn, 0 to 1.00 mass % of Ti, 0 to 0.50 mass % of Sr, 0 to 1.00 mass % of Cr, 0 to 1.00 mass % of Ni, and 0 to 1.00 mass % of Mn with a remainder of Zn and impurities; and chemical composition of the oxide film contains 20.0 to 55.0 at % of Mg, 0.5 to 15.0 at % of Ca, 0 to 15.0 at % of Zn, and 0 at % or more and less than 10.0 at % of Al with a remainder of O and a total of 5.0 at % or less of impurities, and the adhesion amount of the oxide film per one surface is in a range of 0.01 to 10 g/m.sup.2.

A hot stamped steel includes a base material, a plated layer that is formed on a surface of the base material, and an oxide film that is formed on a surface of the plated layer; chemical composition of the plated layer contains 20.00 to 45.00 mass % of Al, 10.00 to 45.00 mass % of Fe, 4.50 to 15.00 mass % of Mg, 0.10 to 3.00 mass % of Si, 0.05 to 3.00 mass % of Ca, 0 to 0.50 mass % of Sb, 0 to 0.50 mass % of Pb, 0 to 1.00 mass % of Cu, 0 to 1.00 mass % of Sn, 0 to 1.00 mass % of Ti, 0 to 0.50 mass % of Sr, 0 to 1.00 mass % of Cr, 0 to 1.00 mass % of Ni, and 0 to 1.00 mass % of Mn with a remainder of Zn and impurities; and chemical composition of the oxide film contains 20.0 to 55.0 at % of Mg, 0.5 to 15.0 at % of Ca, 0 to 15.0 at % of Zn, and 0 at % or more and less than 10.0 at % of Al with a remainder of O and a total of 5.0 at % or less of impurities, and the adhesion amount of the oxide film per one surface is in a range of 0.01 to 10 g/m.sup.2.

The present disclosure is directed to novel high entropy alloys, including refractory high entropy alloys, and methods of selecting high entropy alloys and refractory high entropy alloys with select nuclear application predetermined properties.

The present disclosure is directed to novel high entropy alloys, including refractory high entropy alloys, and methods of selecting high entropy alloys and refractory high entropy alloys with select nuclear application predetermined properties.

A MnAl alloy according to the present invention exhibits metamagnetism and has crystal grains containing a τ-MnAl phase and crystal grains containing a γ2-MnAl phase and a β-MnAl phase. When the ratio of the τ-MnAl phase is A, 75%≤A≤99% is preferably satisfied, and when the ratios of the γ2-MnAl phase and β-MnAl phase are B and C, respectively, B<C is preferably satisfied. Thus, it is possible to obtain metamagnetism over a wide temperature range, particularly, over a temperature range of −100° C. to 200° C. and to enhance saturation magnetization.

A MnAl alloy according to the present invention exhibits metamagnetism and has crystal grains containing a τ-MnAl phase and crystal grains containing a γ2-MnAl phase and a β-MnAl phase. When the ratio of the τ-MnAl phase is A, 75%≤A≤99% is preferably satisfied, and when the ratios of the γ2-MnAl phase and β-MnAl phase are B and C, respectively, B<C is preferably satisfied. Thus, it is possible to obtain metamagnetism over a wide temperature range, particularly, over a temperature range of −100° C. to 200° C. and to enhance saturation magnetization.

A device including a near field transducer, the near field transducer including gold (Au) and at least one other secondary atom, the at least one other secondary atom selected from: boron (B), bismuth (Bi), indium (In), sulfur (S), silicon (Si), tin (Sn), hafnium (Hf), niobium (Nb), manganese (Mn), antimony (Sb), tellurium (Te), carbon (C), nitrogen (N), and oxygen (O), and combinations thereof; erbium (Er), holmium (Ho), lutetium (Lu), praseodymium (Pr), scandium (Sc), uranium (U), zinc (Zn), and combinations thereof; and barium (Ba), chlorine (Cl), cesium (Cs), dysprosium (Dy), europium (Eu), fluorine (F), gadolinium (Gd), germanium (Ge), hydrogen (H), iodine (I), osmium (Os), phosphorus (P), rubidium (Rb), rhenium (Re), selenium (Se), samarium (Sm), terbium (Tb), thallium (Th), and combinations thereof.

A device including a near field transducer, the near field transducer including gold (Au) and at least one other secondary atom, the at least one other secondary atom selected from: boron (B), bismuth (Bi), indium (In), sulfur (S), silicon (Si), tin (Sn), hafnium (Hf), niobium (Nb), manganese (Mn), antimony (Sb), tellurium (Te), carbon (C), nitrogen (N), and oxygen (O), and combinations thereof; erbium (Er), holmium (Ho), lutetium (Lu), praseodymium (Pr), scandium (Sc), uranium (U), zinc (Zn), and combinations thereof; and barium (Ba), chlorine (Cl), cesium (Cs), dysprosium (Dy), europium (Eu), fluorine (F), gadolinium (Gd), germanium (Ge), hydrogen (H), iodine (I), osmium (Os), phosphorus (P), rubidium (Rb), rhenium (Re), selenium (Se), samarium (Sm), terbium (Tb), thallium (Th), and combinations thereof.

A powder metal compact is disclosed. The powder metal compact includes a cellular nanomatrix comprising a nanomatrix material. The powder metal compact also includes a plurality of dispersed particles comprising a particle core material that comprises an Al—Cu—Mg, Al—Mn, Al—Si, Al—Mg, Al—Mg—Si, Al—Zn, Al—Zn—Cu, Al—Zn—Mg, Al—Zn—Cr, Al—Zn—Zr, or Al—Sn—Li alloy, or a combination thereof, dispersed in the cellular nanomatrix.

A powder metal compact is disclosed. The powder metal compact includes a cellular nanomatrix comprising a nanomatrix material. The powder metal compact also includes a plurality of dispersed particles comprising a particle core material that comprises an Al—Cu—Mg, Al—Mn, Al—Si, Al—Mg, Al—Mg—Si, Al—Zn, Al—Zn—Cu, Al—Zn—Mg, Al—Zn—Cr, Al—Zn—Zr, or Al—Sn—Li alloy, or a combination thereof, dispersed in the cellular nanomatrix.