A cutting element for use in a drilling bit and/or a milling bit having a cutter body made of a substrate having an upper surface, and a superabrasive layer overlying the upper surface of the substrate. The cutting element further includes a sleeve extending around a portion of a side surface of the superabrasive layer and a side surface of the substrate, wherein the sleeve exerts a radially compressive force on the superabrasive layer.

A method of manufacturing an elongated electrically conducting element having functionalized carbon nanotubes and at least one metal, includes the steps of mixing functionalized carbon nanotubes with at least one metal, to obtain a composite mixture, and forming a solid mass from the composite mixture from step (i). A solid element obtained from the solid mass from step (ii) is inserted into a metal tube, and the metal tube from step (iii) is deformed, to obtain an elongated electrically conducting element.

A method of manufacturing an elongated electrically conducting element having functionalized carbon nanotubes and at least one metal, includes the steps of mixing functionalized carbon nanotubes with at least one metal, to obtain a composite mixture, and forming a solid mass from the composite mixture from step (i). A solid element obtained from the solid mass from step (ii) is inserted into a metal tube, and the metal tube from step (iii) is deformed, to obtain an elongated electrically conducting element.

A compact, a superabrasive compact and a method of making the compact and superabrasive compact are disclosed. A compact may include a plurality of carbide particles, a binder, and a species. The binder may be dispersed among the plurality of tungsten carbide particles. The species may be dispersed in the compact, wherein the binder has a melting point from about 600° C. to about 1350° C. at ambient pressure. A superabrasive compact may include a diamond table and a substrate. The diamond table may be attached to the substrate. The substrate may have a binder. The melting point of the binder is from about 600° C. to about 1350° C. at high pressure from about 30 kbar to about 100 kbar.

A compact, a superabrasive compact and a method of making the compact and superabrasive compact are disclosed. A compact may include a plurality of carbide particles, a binder, and a species. The binder may be dispersed among the plurality of tungsten carbide particles. The species may be dispersed in the compact, wherein the binder has a melting point from about 600° C. to about 1350° C. at ambient pressure. A superabrasive compact may include a diamond table and a substrate. The diamond table may be attached to the substrate. The substrate may have a binder. The melting point of the binder is from about 600° C. to about 1350° C. at high pressure from about 30 kbar to about 100 kbar.

A heat dissipation component for a semiconductor element includes: a composite part containing 50-80 vol % diamond powder with the remainder having metal including aluminum, the diamond powder having a particle diameter volume distribution first peak at 5-25 μm and a second peak at 55-195 μm. A ratio between a volume distribution area at particle diameters of 1-35 μm and a volume distribution area at particle diameters of 45-205 μm is 1:9 to 4:6; surface layers on both composite part principal surfaces, each of the surface layers containing 80 vol % or more metal including aluminum and having a film thickness of 0.03-0.2 mm; and a crystalline Ni layer and an Au layer on at least one of the surface layers, the crystalline Ni layer having a film thickness of 0.5-6.5 μm, and the Au layer having a film thickness of 0.05 μm or larger.

A heat dissipation component for a semiconductor element includes: a composite part containing 50-80 vol % diamond powder with the remainder having metal including aluminum, the diamond powder having a particle diameter volume distribution first peak at 5-25 μm and a second peak at 55-195 μm. A ratio between a volume distribution area at particle diameters of 1-35 μm and a volume distribution area at particle diameters of 45-205 μm is 1:9 to 4:6; surface layers on both composite part principal surfaces, each of the surface layers containing 80 vol % or more metal including aluminum and having a film thickness of 0.03-0.2 mm; and a crystalline Ni layer and an Au layer on at least one of the surface layers, the crystalline Ni layer having a film thickness of 0.5-6.5 μm, and the Au layer having a film thickness of 0.05 μm or larger.

Disclosed are a composite sintered body for a cutting tool and a cutting tool using the same. The composite sintered body for a cutting tool has enhanced heat conductivity and electrical conductivity to be strong against abrasion by heat and impact and to be capable of minimizing an influence on an edge during an Electrical Discharge Machine (EDM) operation.

Polycrystalline diamond bodies having an annular region of diamond grains and a core region of diamond grains and methods of making the same are disclosed. In one embodiment, a polycrystalline diamond body includes an annular region of inter-bonded diamond grains having a first characteristic property and a core region of inter-bonded diamond grains bonded to the annular region and having a second characteristic property that differs from the first characteristic property. The annular region decreases in thickness from a perimeter surface of the polycrystalline diamond body towards a centerline axis.

A method of manufacturing polycrystalline abrasive elements consisting of micron, sub-micron or nano-sized ultrahard abrasives dispersed in micron, sub-micron or nano-sized matrix materials. A plurality of ultrahard abrasive particles having vitreophilic surfaces are coated with a matrix precursor material in a refined colloidal process and then treated to render them suitable for sintering. The matrix precursor material can be converted to an oxide, nitride, carbide, oxynitride, oxycarbide, or carbonitride, or an elemental form thereof. The coated ultrahard abrasive particles are consolidated and sintered at a pressure and temperature at which they are crystallographically or thermodynamically stable.