Advanced ultra high temperature ceramic (UHTC) systems with higher temperature capabilities, particularly an integrated ceramic coating and ceramic matrix composite (ICC-CMC). Also disclosed are coating and/or ceramic matrix composites and architecture arrangements to achieve ultra-high temperature and heat flux capability, resistance to oxidation, combustion, and a wide range of spectrum wavelength and charged particle radiation environments.

Advanced ultra high temperature ceramic (UHTC) systems with higher temperature capabilities, particularly an integrated ceramic coating and ceramic matrix composite (ICC-CMC). Also disclosed are coating and/or ceramic matrix composites and architecture arrangements to achieve ultra-high temperature and heat flux capability, resistance to oxidation, combustion, and a wide range of spectrum wavelength and charged particle radiation environments.

A metallic material that includes a base material; and a surface layer formed on a surface of the base material and exposed on an outermost surface, wherein the surface layer contains Ag, and In less than the Ag in atomic ratio, and a connection terminal being made of the metallic material, wherein the surface layer is formed on a surface of the base material, at least in a contact portion electrically contacting an opposite electrically conductive member.

A device including a near field transducer, the near field transducer including gold (Au) and at least one other secondary atom, the at least one other secondary atom selected from: boron (B), bismuth (Bi), indium (In), sulfur (S), silicon (Si), tin (Sn), hafnium (Hf), niobium (Nb), manganese (Mn), antimony (Sb), tellurium (Te), carbon (C), nitrogen (N), and oxygen (O), and combinations thereof; erbium (Er), holmium (Ho), lutetium (Lu), praseodymium (Pr), scandium (Sc), uranium (U), zinc (Zn), and combinations thereof; and barium (Ba), chlorine (Cl), cesium (Cs), dysprosium (Dy), europium (Eu), fluorine (F), gadolinium (Gd), germanium (Ge), hydrogen (H), iodine (I), osmium (Os), phosphorus (P), rubidium (Rb), rhenium (Re), selenium (Se), samarium (Sm), terbium (Tb), thallium (Th), and combinations thereof.

A device including a near field transducer, the near field transducer including gold (Au) and at least one other secondary atom, the at least one other secondary atom selected from: boron (B), bismuth (Bi), indium (In), sulfur (S), silicon (Si), tin (Sn), hafnium (Hf), niobium (Nb), manganese (Mn), antimony (Sb), tellurium (Te), carbon (C), nitrogen (N), and oxygen (O), and combinations thereof; erbium (Er), holmium (Ho), lutetium (Lu), praseodymium (Pr), scandium (Sc), uranium (U), zinc (Zn), and combinations thereof; and barium (Ba), chlorine (Cl), cesium (Cs), dysprosium (Dy), europium (Eu), fluorine (F), gadolinium (Gd), germanium (Ge), hydrogen (H), iodine (I), osmium (Os), phosphorus (P), rubidium (Rb), rhenium (Re), selenium (Se), samarium (Sm), terbium (Tb), thallium (Th), and combinations thereof.

Provided is a master alloy for a sputtering target, wherein, when elements constituting the master alloy are following X1, X2, Y1, Y2, Y2, and Y3; specifically, where X1 is one or two types of Ta or W; X2 is at least one type of Ru, Mo, Nb or Hf; Y1 is one or two types of Cr or Mn; Y2 is one or two types of Co or Ni; and Y3 is one or two types of Ti or V, the master alloy comprises any one combination of X1-Y1, X1-Y2, X1-Y3, X2-Y1, and X2-Y2 of the foregoing constituent elements. The present invention consequently yields superior effects of being able to obtain a sintered sputtering target with few defects and having a high-density and uniform alloy composition, and, by using this target, to realize the deposition of an alloy barrier film with uniform quality and few particles at a high speed.

Provided is a master alloy for a sputtering target, wherein, when elements constituting the master alloy are following X1, X2, Y1, Y2, Y2, and Y3; specifically, where X1 is one or two types of Ta or W; X2 is at least one type of Ru, Mo, Nb or Hf; Y1 is one or two types of Cr or Mn; Y2 is one or two types of Co or Ni; and Y3 is one or two types of Ti or V, the master alloy comprises any one combination of X1-Y1, X1-Y2, X1-Y3, X2-Y1, and X2-Y2 of the foregoing constituent elements. The present invention consequently yields superior effects of being able to obtain a sintered sputtering target with few defects and having a high-density and uniform alloy composition, and, by using this target, to realize the deposition of an alloy barrier film with uniform quality and few particles at a high speed.

An article formed of a metal alloy is covered at least partially with a metal hydride and a shell metal to form an assembly. Load is applied to the assembly and the assembly is heated. The shell metal deforms around the article and the metal hydride and forms a gas proof seal. The metal hydride thermally decomposes to form hydrogen gas. At least a portion of the hydrogen gas dissociates and moves as monoatomic hydrogen into the article. The metal alloy can be a zirconium metal alloy, the metal hydride can be a zirconium metal hydride, and the shell metal can be substantially copper.

An article formed of a metal alloy is covered at least partially with a metal hydride and a shell metal to form an assembly. Load is applied to the assembly and the assembly is heated. The shell metal deforms around the article and the metal hydride and forms a gas proof seal. The metal hydride thermally decomposes to form hydrogen gas. At least a portion of the hydrogen gas dissociates and moves as monoatomic hydrogen into the article. The metal alloy can be a zirconium metal alloy, the metal hydride can be a zirconium metal hydride, and the shell metal can be substantially copper.

A process of converting an outer layer of an object made of a refractory metal, such as titanium, into a carbide of the refractory metal. A molten metal, such as molten lithium, is placed adjacent the outer surface of the object. The lithium does not react with the titanium, nor is it soluble within the titanium to any significant extent at the temperatures involved. The molten lithium contains elemental carbon, that is, free carbon atoms. At high temperature, the carbon diffuses into the titanium, and reacts with titanium atoms to form titanium carbide in an outer layer. Significantly, no other atoms are present, such as hydrogen or oxygen, which can cause problems, because they are blocked by the molten lithium.