Patent classifications
C22C27/00
Tantalum sputtering target
Provided is a tantalum sputtering target containing 1 mass ppm or more and 100 mass ppm or less of niobium as an essential component, and having a purity of 99.999% or more excluding niobium and gas components. Thereby obtained is a high purity tantalum sputtering target comprising a uniform and fine structure and which yields stable plasma and superior film evenness (uniformity).
Tantalum sputtering target
Provided is a tantalum sputtering target containing 1 mass ppm or more and 100 mass ppm or less of niobium as an essential component, and having a purity of 99.999% or more excluding niobium and gas components. Thereby obtained is a high purity tantalum sputtering target comprising a uniform and fine structure and which yields stable plasma and superior film evenness (uniformity).
Silicide alloy film for semiconductor device electrode, and production method for silicide alloy film
The present invention relates to a silicide alloy film that is formed on a substrate containing Si, the silicide alloy film including a metal M1 having a work function of 4.6 eV or more and 5.7 eV or less, a metal M2 having a work function of 2.5 eV or less and 4.0 eV or more, and Si, the silicide alloy film having a work function of 4.3 eV or more and 4.9 eV or less. Here, the metal M1 is preferably Pt, Pd, Mo, Ir, W or Ru, and the metal M2 is preferably Hf, La, Er, Ho, Er, Eu, Pr or Sm. The silicide alloy film according to the present invention is a thin-film which has excellent heat-resistance and favorable electrical property.
Silicide alloy film for semiconductor device electrode, and production method for silicide alloy film
The present invention relates to a silicide alloy film that is formed on a substrate containing Si, the silicide alloy film including a metal M1 having a work function of 4.6 eV or more and 5.7 eV or less, a metal M2 having a work function of 2.5 eV or less and 4.0 eV or more, and Si, the silicide alloy film having a work function of 4.3 eV or more and 4.9 eV or less. Here, the metal M1 is preferably Pt, Pd, Mo, Ir, W or Ru, and the metal M2 is preferably Hf, La, Er, Ho, Er, Eu, Pr or Sm. The silicide alloy film according to the present invention is a thin-film which has excellent heat-resistance and favorable electrical property.
MATERIALS FOR NEAR FIELD TRANSDUCERS AND NEAR FIELD TRANSDUCERS CONTAINING SAME
A method of forming a near field transducer (NFT) layer, the method including depositing a film of a primary element, the film having a film thickness and a film expanse; and implanting at least one secondary element into the primary element, wherein the NFT layer includes the film of the primary element doped with the at least one secondary element.
MATERIALS FOR NEAR FIELD TRANSDUCERS AND NEAR FIELD TRANSDUCERS CONTAINING SAME
A method of forming a near field transducer (NFT) layer, the method including depositing a film of a primary element, the film having a film thickness and a film expanse; and implanting at least one secondary element into the primary element, wherein the NFT layer includes the film of the primary element doped with the at least one secondary element.
Stable binary nanocrystalline alloys and methods of identifying same
Identifying a stable phase of a binary alloy comprising a solute element and a solvent element. In one example, at least two thermodynamic parameters associated with grain growth and phase separation of the binary alloy are determined, and the stable phase of the binary alloy is identified based on the first thermodynamic parameter and the second thermodynamic parameter, wherein the stable phase is one of a stable nanocrystalline phase, a metastable nanocrystalline phase, and a non-nanocrystalline phase.
Stable binary nanocrystalline alloys and methods of identifying same
Identifying a stable phase of a binary alloy comprising a solute element and a solvent element. In one example, at least two thermodynamic parameters associated with grain growth and phase separation of the binary alloy are determined, and the stable phase of the binary alloy is identified based on the first thermodynamic parameter and the second thermodynamic parameter, wherein the stable phase is one of a stable nanocrystalline phase, a metastable nanocrystalline phase, and a non-nanocrystalline phase.
Metal-alloy biphasic systems, and powders and methods for making metal-alloy biphasic systems
Some variations provide a metal-alloy biphasic system containing a first metal M.sup.1 and a second metal M.sup.2, wherein a second metal phase has a melting temperature lower than that of a first metal phase, and wherein the metal-alloy biphasic system has a hierarchical microstructure containing a second length scale that is at least one order of magnitude smaller than a first length scale. Some variations provide a metal-alloy biphasic system containing a first metal M.sup.1 and a second metal M.sup.2, wherein a second metal phase has a melting temperature lower than that of a first metal phase, and wherein the first metal phase forms a continuous network. Other variations provide a metal-alloy biphasic powder containing at least a first metal and a second metal, wherein the solubility of first metal in second metal is less than 5%. Methods of making and using the powders and biphasic system are disclosed.
Metal-alloy biphasic systems, and powders and methods for making metal-alloy biphasic systems
Some variations provide a metal-alloy biphasic system containing a first metal M.sup.1 and a second metal M.sup.2, wherein a second metal phase has a melting temperature lower than that of a first metal phase, and wherein the metal-alloy biphasic system has a hierarchical microstructure containing a second length scale that is at least one order of magnitude smaller than a first length scale. Some variations provide a metal-alloy biphasic system containing a first metal M.sup.1 and a second metal M.sup.2, wherein a second metal phase has a melting temperature lower than that of a first metal phase, and wherein the first metal phase forms a continuous network. Other variations provide a metal-alloy biphasic powder containing at least a first metal and a second metal, wherein the solubility of first metal in second metal is less than 5%. Methods of making and using the powders and biphasic system are disclosed.