Patent classifications
C22C27/00
METAL-ALLOY BIPHASIC SYSTEMS, AND POWDERS AND METHODS FOR MAKING METAL-ALLOY BIPHASIC SYSTEMS
Some variations provide a metal-alloy biphasic system containing a first metal M.sup.1 and a second metal M.sup.2, wherein a second metal phase has a melting temperature lower than that of a first metal phase, and wherein the metal-alloy biphasic system has a hierarchical microstructure containing a second length scale that is at least one order of magnitude smaller than a first length scale. Some variations provide a metal-alloy biphasic system containing a first metal M.sup.1 and a second metal M.sup.2, wherein a second metal phase has a melting temperature lower than that of a first metal phase, and wherein the first metal phase forms a continuous network. Other variations provide a metal-alloy biphasic powder containing at least a first metal and a second metal, wherein the solubility of first metal in second metal is less than 5%. Methods of making and using the powders and biphasic system are disclosed.
POLYHEDRAL METAL NANOCAGES WITH WELL-DEFINED FACETS AND ULTRATHIN WALLS AND METHODS OF MAKING AND USES THEREOF
A variety of polyhedral nanocages are provided having a hollow interior, ultrathin walls, and well-defined facets of metal atoms. The nanocages can include a variety of precious metals such as Pt, Au, Ru, Rh, or Ir. The metal atoms can take a face-centered cubic structure with {111} facets on the surface. The walls can be thin, sometimes less than 1 nm in thickness or only a few atomic layers in thickness. The nanocages can provide for efficient uses of valuable precious metals, among other things, in catalysis. For example, catalysts are provided exhibiting high mass activities in oxygen reduction reactions. Methods of making and methods of using the nanocages and catalysts are also provided.
Separation method
A process for recovering metal from a process material comprising the metal and a component that is more volatile than the metal, which process comprises: transporting the process material in a retort provided in a furnace, the retort being operated under vacuum and at a temperature sufficient to cause sublimation of the component from the process material thereby producing purified metal; depositing the component that has been sublimed on a cool surface; removing purified metal from the retort; and removing deposited component from the cool surface.
SILICIDE ALLOY FILM FOR SEMICONDUCTOR DEVICE ELECTRODE, AND PRODUCTION METHOD FOR SILICIDE ALLOY FILM
The present invention relates to a silicide alloy film that is formed on a substrate containing Si, the silicide alloy film including a metal M1 having a work function of 4.6 eV or more and 5.7 eV or less, a metal M2 having a work function of 2.5 eV or less and 4.0 eV or more, and Si, the silicide alloy film having a work function of 4.3 eV or more and 4.9 eV or less. Here, the metal M1 is preferably Pt, Pd, Mo, Ir, W or Ru, and the metal M2 is preferably Hf, La, Er, Ho, Er, Eu, Pr or Sm. The silicide alloy film according to the present invention is a thin-film which has excellent heat-resistance and favorable electrical property.
ANTI-CORROSION STRUCTURE AND FUEL CELL EMPLOYING THE SAME
An anti-corrosion structure and a fuel cell employing the same are provided. The anti-corrosion structure includes an aluminum layer, a first anti-corrosion layer, and an intermediate layer disposed between the aluminum layer and the first anti-corrosion layer. In particular, the first anti-corrosion layer can be a nickel-tin-containing alloy layer, and the intermediate layer can be a nickel-tin-aluminum-containing alloy layer.
Nickel titanium alloys, methods of manufacture thereof and article comprising the same
Disclosed herein is a shape memory alloy comprising 48 to 50 atomic percent nickel, 15 to 30 atomic percent hathium, 1 to 5 atomic percent aluminum; with the remainder being titanium. Disclosed herein too is a method of manufacturing a shape memory alloy comprising mixing together to form an alloy nickel, hafnium, aluminum and titanium in amounts of 48 to 50 atomic percent nickel, 15 to 30 atomic percent hafnium, 1 to 5 atomic percent aluminum; with the remainder being titanium; solution treating the alloy at a temperature of 700 to 1300 C. for 50 to 200 hours; and aging the alloy at a temperature of 400 to 800 C. for a time period of 50 to 200 hours to form a shape memory alloy.
Nickel titanium alloys, methods of manufacture thereof and article comprising the same
Disclosed herein is a shape memory alloy comprising 48 to 50 atomic percent nickel, 15 to 30 atomic percent hathium, 1 to 5 atomic percent aluminum; with the remainder being titanium. Disclosed herein too is a method of manufacturing a shape memory alloy comprising mixing together to form an alloy nickel, hafnium, aluminum and titanium in amounts of 48 to 50 atomic percent nickel, 15 to 30 atomic percent hafnium, 1 to 5 atomic percent aluminum; with the remainder being titanium; solution treating the alloy at a temperature of 700 to 1300 C. for 50 to 200 hours; and aging the alloy at a temperature of 400 to 800 C. for a time period of 50 to 200 hours to form a shape memory alloy.
RUTHENIUM ALLOYS FOR BIOSENSORS
The present disclosure relates to metal alloys for biosensors. An electrode is made from ruthenium metal or a ruthenium-based alloy. The resulting electrode has physical and electrical property advantages when compared with existing pure metal electrodes.
RUTHENIUM ALLOYS FOR BIOSENSORS
The present disclosure relates to metal alloys for biosensors. An electrode is made from ruthenium metal or a ruthenium-based alloy. The resulting electrode has physical and electrical property advantages when compared with existing pure metal electrodes.
MATERIALS FOR NEAR FIELD TRANSDUCERS AND NEAR FIELD TRANSDUCERS CONTAINING SAME
A method of forming a near field transducer (NFT) layer, the method including depositing a film of a primary element, the film having a film thickness and a film expanse; and implanting at least one secondary element into the primary element, wherein the NFT layer includes the film of the primary element doped with the at least one secondary element.