A method of forming a near field transducer (NFT) layer, the method including depositing a film of a primary element, the film having a film thickness and a film expanse; and implanting at least one secondary element into the primary element, wherein the NFT layer includes the film of the primary element doped with the at least one secondary element.

A stent comprising a cobalt-based alloy comprising at least 18 weight % cobalt (Co), 10-25 weight % chromium (Cr), 10-15 weight % tungsten (W), optionally, up to 2 weight % of manganese (Mn), optionally, up to 3 weight % iron (Fe), and 10-65 weight % of a metal member selected from a platinum group metal.

A process of converting an outer layer of an object made of a refractory metal, such as titanium, into a carbide of the refractory metal. A molten metal, such as molten lithium, is placed adjacent the outer surface of the object. The lithium does not react with the titanium, nor is it soluble within the titanium to any significant extent at the temperatures involved. The molten lithium contains elemental carbon, that is, free carbon atoms. At high temperature, the carbon diffuses into the titanium, and reacts with titanium atoms to form titanium carbide in an outer layer. Significantly, no other atoms are present, such as hydrogen or oxygen, which can cause problems, because they are blocked by the molten lithium.

A process of converting an outer layer of an object made of a refractory metal, such as titanium, into a carbide of the refractory metal. A molten metal, such as molten lithium, is placed adjacent the outer surface of the object. The lithium does not react with the titanium, nor is it soluble within the titanium to any significant extent at the temperatures involved. The molten lithium contains elemental carbon, that is, free carbon atoms. At high temperature, the carbon diffuses into the titanium, and reacts with titanium atoms to form titanium carbide in an outer layer. Significantly, no other atoms are present, such as hydrogen or oxygen, which can cause problems, because they are blocked by the molten lithium.

Embodiments are directed to radiopaque implantable structures (e.g., stents) formed of cobalt-based alloys that comprise cobalt, chromium and one or more platinum group metals, refractory metals, precious metals, or combinations thereof. Platinum group metals include platinum, palladium, ruthenium, rhodium, osmium, and iridium. Refractory metals include zirconium, niobium, rhodium, molybdenum, hafnium, tantalum, tungsten, rhenium, and precious metals include silver and gold. In one embodiment, the one or more included platinum group or refractory metals substitute at least partially for nickel, such that the alloy exhibits reduced nickel content, or is substantially nickel free. The stents exhibit improved radiopacity as compared to similar alloys including greater amounts of nickel.

Disclosed herein are layered Heusler alloys. The layered Heusler alloys can comprise a first layer comprising a first Heusler alloy with a face-centered cubic (fcc) crystal structure and a second layer comprising a second Heusler alloy with a fcc crystal structure, the second Heusler alloy being different than the first Heusler alloy, wherein the first layer and the second layer are layered along a layering direction, the layering direction being the [110] or [111] direction of the fcc crystal structure, thereby forming the layered Heusler alloy.

A thermoelectric generator includes a hot side heat exchanger, a cold side heat exchanger, a plurality of n-type semiconductor legs arranged between the hot side heat exchanger and the cold side heat exchanger, and a plurality of p-type semiconductor legs arranged between the hot side heat exchanger and the cold side heat exchanger and alternating electrically in series with the plurality of n-type semiconductor legs. At least one of the plurality of n-type semiconductor legs and the plurality of p-type semiconductor legs is formed of an alloy having a half-Heusler structure and comprising Si and Sn with molar fractions of x Sn and 1-x Si, and x is less than 1.

Disclosed herein are layered Heusler alloys. The layered Heusler alloys can comprise a first layer comprising a first Heusler alloy with a face-centered cubic (fcc) crystal structure and a second layer comprising a second Heusler alloy with a fcc crystal structure, the second Heusler alloy being different than the first Heusler alloy, wherein the first layer and the second layer are layered along a layering direction, the layering direction being the [110] or [111] direction of the fcc crystal structure, thereby forming the layered Heusler alloy.

Disclosed herein are layered Heusler alloys. The layered Heusler alloys can comprise a first layer comprising a first Heusler alloy with a face-centered cubic (fcc) crystal structure and a second layer comprising a second Heusler alloy with a fcc crystal structure, the second Heusler alloy being different than the first Heusler alloy, wherein the first layer and the second layer are layered along a layering direction, the layering direction being the [110] or [111] direction of the fcc crystal structure, thereby forming the layered Heusler alloy.

Article(s) are disclosed that are formed, at least in part, by a cemented carbide composition having about 8 to about 35 wt. % Co and about 0.8 to about 3.5 wt. % Cr.