A method for synthesizing a reagent complex includes a step of ball-milling a mixture that includes: a powder of a zero-valent element; a hydride molecule; and a nitrile ligand. The method produces a reagent complex having a formula Q.sup.0.X.sub.y.L.sub.z, where Q.sup.0 is the zero-valent element, X is the hydride molecule, and L is the nitrile ligand. A process for synthesizing nanoparticles composed of the zero-valent element includes a step of adding solvent to the reagent complex. Crystal texture of the nanoparticles is modulated by appropriate selection of the molar ratio nitrile ligand in the reagent complex.

A conductive material including a first element selected from a transition metal, a platinum-group element, a rare earth element, and a combination thereof, a second element having an atomic radius which is 10 percent less than to 10 percent greater than an atomic radius of the first element, and a chalcogen element, wherein the conductive material has a layered crystal structure.

A conductive material including a first element selected from a transition metal, a platinum-group element, a rare earth element, and a combination thereof, a second element having an atomic radius which is 10 percent less than to 10 percent greater than an atomic radius of the first element, and a chalcogen element, wherein the conductive material has a layered crystal structure.

Methods of synthesizing colloidal ternary Group III-V nanocrystals are provided. Also provided are the colloidal ternary Group III-V nanocrystals made using the methods. In the methods, molten inorganic salts are used as high temperature solvents to carry out cation exchange reactions that convert binary nanocrystals into ternary nanocrystals.

A step of, while a powder of an RLM alloy (where RL is Nd and/or Pr; M is one or more elements selected from among Cu, Fe, Ga, Co, Ni and Al) and a powder of an RH compound (where RH is Dy and/or Tb; and the RH compound is one, or two or more, selected from among an RH fluoride, an RH oxide, and an RH oxyfluoride) are present on the surface of a sintered R-T-B based magnet, performing a heat treatment at a sintering temperature of the sintered R-T-B based magnet or lower is included. The RLM alloy contains RL in an amount of 65 at % or more, and the melting point of the RLM alloy is equal to or less than the temperature of the heat treatment. The heat treatment is performed while the RLM alloy powder and the RH compound powder are present on the surface of the sintered R-T-B based magnet at a mass ratio of RLM alloy:RH compound=9.6:0.4 to 5:5.

A step of, while a powder of an RLM alloy (where RL is Nd and/or Pr; M is one or more elements selected from among Cu, Fe, Ga, Co, Ni and Al) and a powder of an RH compound (where RH is Dy and/or Tb; and the RH compound is one, or two or more, selected from among an RH fluoride, an RH oxide, and an RH oxyfluoride) are present on the surface of a sintered R-T-B based magnet, performing a heat treatment at a sintering temperature of the sintered R-T-B based magnet or lower is included. The RLM alloy contains RL in an amount of 65 at % or more, and the melting point of the RLM alloy is equal to or less than the temperature of the heat treatment. The heat treatment is performed while the RLM alloy powder and the RH compound powder are present on the surface of the sintered R-T-B based magnet at a mass ratio of RLM alloy:RH compound=9.6:0.4 to 5:5.

A step of, while a powder of an RLM alloy (where RL is Nd and/or Pr; M is one or more elements selected from among Cu, Fe, Ga, Co, Ni and Al) which is produced through atomization and a powder of an RH compound (where RH is Dy and/or Tb) are present on the surface of a sintered R-T-B based magnet, performing a heat treatment at a sintering temperature of the sintered R-T-B based magnet or lower is included. The RLM alloy contains RL in an amount of 65 at % or more, and the melting point of the RLM alloy is equal to or less than the temperature of the heat treatment. The heat treatment is performed while the RLM alloy powder and the RH compound powder are present on the surface of the sintered R-T-B based magnet at a mass ratio of RLM alloy:RH compound=9.6:0.4 to 5:5.

A step of, while a powder of an RLM alloy (where RL is Nd and/or Pr; M is one or more elements selected from among Cu, Fe, Ga, Co, Ni and Al) which is produced through atomization and a powder of an RH compound (where RH is Dy and/or Tb) are present on the surface of a sintered R-T-B based magnet, performing a heat treatment at a sintering temperature of the sintered R-T-B based magnet or lower is included. The RLM alloy contains RL in an amount of 65 at % or more, and the melting point of the RLM alloy is equal to or less than the temperature of the heat treatment. The heat treatment is performed while the RLM alloy powder and the RH compound powder are present on the surface of the sintered R-T-B based magnet at a mass ratio of RLM alloy:RH compound=9.6:0.4 to 5:5.

Embodiments of the present invention provide an improved method and structure for flip chip implementation. The interconnections between the electronic circuit (e.g. silicon die) and the circuit board substrate are comprised of a metal alloy that becomes liquid at the operating temperature of the chip. This allows a softer underfill to be used, which in turn reduces stresses during operation and thermal cycling that are caused by the different coefficient of thermal expansion (CTE) of the electronic circuit chip and the circuit board substrate.

Embodiments of the present invention provide an improved method and structure for flip chip implementation. The interconnections between the electronic circuit (e.g. silicon die) and the circuit board substrate are comprised of a metal alloy that becomes liquid at the operating temperature of the chip. This allows a softer underfill to be used, which in turn reduces stresses during operation and thermal cycling that are caused by the different coefficient of thermal expansion (CTE) of the electronic circuit chip and the circuit board substrate.