A permanent magnet includes a rare earth element R; a transition metal element T; and B. The permanent magnet includes Nd as R. The permanent magnet includes Fe as T. The permanent magnet contains main phase grains and R-rich phases. The main phase grains include R, T, and B. The R-rich phases include R. The main phase grains observed in a cross section of the permanent magnet are flat. The cross section is parallel to an easy magnetization axis direction of the permanent magnet. Each of the R-rich phases is located between the main phase grains. An average value of intervals between the R-rich phases in a direction substantially perpendicular to the easy magnetization axis direction is from 30 μm to 1,000 μm. An average value of lengths of short axes of the main phase grains observed in the cross section is from 20 nm to 200 nm.

A permanent magnet includes a rare earth element R; a transition metal element T; and B. The permanent magnet includes Nd as R. The permanent magnet includes Fe as T. The permanent magnet contains main phase grains and R-rich phases. The main phase grains include R, T, and B. The R-rich phases include R. The main phase grains observed in a cross section of the permanent magnet are flat. The cross section is parallel to an easy magnetization axis direction of the permanent magnet. Each of the R-rich phases is located between the main phase grains. An average value of intervals between the R-rich phases in a direction substantially perpendicular to the easy magnetization axis direction is from 30 μm to 1,000 μm. An average value of lengths of short axes of the main phase grains observed in the cross section is from 20 nm to 200 nm.

One embodiment of the present invention includes single-crystal particles of a TbCu.sub.7 type samarium-iron-nitrogen based alloy in an anisotropic magnet powder.

One embodiment of the present invention includes single-crystal particles of a TbCu.sub.7 type samarium-iron-nitrogen based alloy in an anisotropic magnet powder.

The present invention provides a solder material containing Sn or a Sn-containing alloy and 40 to 320 ppm by mass of A, the solder material including an As-enriched layer.

A method for producing a powdered starting material, which is provided for production of rare earth magnets, including the following steps: pulverizing an alloy, including at least one rare earth metal, wherein a powdered intermediate product is formed from the alloy including at least one rare earth metal, and carrying out at least one classification aimed at particle size and/or density for the powdered intermediate product, wherein a fraction of the powdered intermediate product, which is formed by means of the at least one classification, for fabrication of rare earth magnets. Furthermore, at least one dynamic classifier is provided, implementing at least one classification directed at particle size and/or density for the powdered intermediate product and thereby separates the fraction from the powdered intermediate product, which forms the starting material provided for manufacturing rare earth magnets.

A method for producing a powdered starting material, which is provided for production of rare earth magnets, including the following steps: pulverizing an alloy, including at least one rare earth metal, wherein a powdered intermediate product is formed from the alloy including at least one rare earth metal, and carrying out at least one classification aimed at particle size and/or density for the powdered intermediate product, wherein a fraction of the powdered intermediate product, which is formed by means of the at least one classification, for fabrication of rare earth magnets. Furthermore, at least one dynamic classifier is provided, implementing at least one classification directed at particle size and/or density for the powdered intermediate product and thereby separates the fraction from the powdered intermediate product, which forms the starting material provided for manufacturing rare earth magnets.

Provided are a sputtering target that makes it possible to form a chalcogenide material film with enhanced heat resistance, a method of manufacturing the sputtering target, and a memory device manufacturing method. The sputtering target includes an alloy containing a first component containing arsenic and selenium and a second component containing at least one of boron and carbon.

A coated metal alloy substrate with at least one chamfered edge, a process for producing a coated metal alloy substrate, and an electronic device having a housing comprising a coated metal alloy substrate are described. The coated metal alloy substrate with at least 10 one chamfered edge comprises a water transfer print layer deposited on the metal alloy substrate, a passivation layer deposited on the at least one chamfered edge, and an electrophoretic deposition layer deposited on the passivation layer.

A negative electrode active material for a secondary battery includes an intermetallic compound having a cage structure. The cage structure is constituted of at least one first atom located within a cage, and a plurality of second atoms arranged in a cage-like form so as to surround the first atom. The first atom is a cerium atom, and the plurality of the second atoms include 8 or more and 17 or less silicon atoms.