Patent classifications
C22C29/00
ITEM MADE OF PRECIOUS CERMET
An item produced in a cermet material including by weight between 85 and 94% of a ceramic phase and between 6 and 15% of a metal binder phase, the ceramic phase mostly including a tungsten carbide phase and optionally one or more phases of one or more secondary carbides selected from the elements Ti, Zr, Hf, V, Nb, Ta, Cr and Mo, the metal binder comprising Ag, Pd, Ru and Co. The invention generally relates to the method for manufacturing said item.
Composite structure with aluminum-based alloy layer containing boron carbide and manufacturing method thereof
A composite structure with an aluminum-based alloy layer containing boron carbide and a manufacturing method thereof are provided. The composite structure includes a substrate with an open hole in that surface and the aluminum-based alloy layer containing boron carbide. The aluminum-based alloy layer is disposed in the open hole and contains aluminum, boron, carbon, and oxygen, wherein the content of aluminum is between 4 at. % and 55 at. %, the content of boron is between 9 at. % and 32 at. %, the content of carbon is between 13 at. % and 32 at. %, the content of oxygen is between 2 at. % and 38 at. %, and the ratio of the content of boron to carbon is between 0.3 and 2.7.
SUPERHARD CONSTRUCTIONS AND METHODS OF MAKING SAME
A superhard polycrystalline construction comprises a body of polycrystalline superhard material comprising a superhard phase, and a second phase dispersed in the superhard phase, the superhard phase comprising a plurality of inter-bonded superhard grains. The second phase comprises particles or grains that do not chemically react with the superhard grains, and/or do not inter-grow, and form between around 1 to 30 volume % or wt % of the body of polycrystalline superhard material.
High Rate Sputter Deposition of Alkali Metal-Containing Precursor Films Useful to Fabricate Chalcogenide Semiconductors
The present invention provides methods to sputter deposit films comprising alkali metal compounds. At least one target comprising one or more alkali metal compounds and at least one metallic component is sputtered to form one or more corresponding sputtered films. The at least one target has an atomic ratio of the alkali metal compound to the at least one metallic component in the range from 15:85 to 85:15. The sputtered film(s) incorporating such alkali metal compounds are incorporated into a precursor structure also comprising one or more chalcogenide precursor films. The precursor structure is heated in the presence of at least one chalcogen to form a chalcogenide semiconductor. The resultant chalcogenide semiconductor comprises up to 2 atomic percent of alkali metal content, wherein at least a major portion of the alkali metal content of the resultant chalcogenide semiconductor is derived from the sputtered film(s) incorporating the alkali metal compound(s). The chalcogenide semiconductors are useful in microelectronic devices, including solar cells.
High Rate Sputter Deposition of Alkali Metal-Containing Precursor Films Useful to Fabricate Chalcogenide Semiconductors
The present invention provides methods to sputter deposit films comprising alkali metal compounds. At least one target comprising one or more alkali metal compounds and at least one metallic component is sputtered to form one or more corresponding sputtered films. The at least one target has an atomic ratio of the alkali metal compound to the at least one metallic component in the range from 15:85 to 85:15. The sputtered film(s) incorporating such alkali metal compounds are incorporated into a precursor structure also comprising one or more chalcogenide precursor films. The precursor structure is heated in the presence of at least one chalcogen to form a chalcogenide semiconductor. The resultant chalcogenide semiconductor comprises up to 2 atomic percent of alkali metal content, wherein at least a major portion of the alkali metal content of the resultant chalcogenide semiconductor is derived from the sputtered film(s) incorporating the alkali metal compound(s). The chalcogenide semiconductors are useful in microelectronic devices, including solar cells.
SYSTEM AND METHOD FOR MANUFACTURING A PART
The invention relates to a manufacturing system and method for manufacturing a part. A negative powder forms a holder suitable to hold particles of a positive powder in proximity to one another. A connection scheme such as heating, the use of pressure and/or a binder, when employed, connects the particles to one another to form the part.
SYSTEM AND METHOD FOR MANUFACTURING A PART
The invention relates to a manufacturing system and method for manufacturing a part. A negative powder forms a holder suitable to hold particles of a positive powder in proximity to one another. A connection scheme such as heating, the use of pressure and/or a binder, when employed, connects the particles to one another to form the part.
FeNi binder having universal usability
A method for producing a composite material includes providing a composition comprising at least one hardness carrier and a base binder alloy, and sintering the composition. The base binder alloy comprises from 66 to 93 wt.-% of nickel, from 7 to 34 wt.-% of iron, and from 0 to 9 wt.-% of cobalt, wherein the wt.-% proportions of the base binder alloy add up to 100 wt.-%.
FeNi binder having universal usability
A method for producing a composite material includes providing a composition comprising at least one hardness carrier and a base binder alloy, and sintering the composition. The base binder alloy comprises from 66 to 93 wt.-% of nickel, from 7 to 34 wt.-% of iron, and from 0 to 9 wt.-% of cobalt, wherein the wt.-% proportions of the base binder alloy add up to 100 wt.-%.
Cutting tool
A cutting tool made of a cemented carbide substrate of WC, a metallic binder phase and gamma phase is provided. The cemented carbide has a well distributed gamma phase and a reduced amount of abnormal WC grains. The cutting tool has a more predicted tool life and an increased resistance against plastic deformation.