Transition metal dichalcogenide (TMDC) films and methods for conformally depositing TMDC films on a substrate surface are described. The substrate surface may have one or more features formed therein, one or more layers formed thereon, and combinations thereof. The substrate surface is exposed to a transition metal precursor and an oxidant to form a transition metal oxide film in a first phase. The transition metal oxide film is exposed to a chalcogenide precursor to convert the transition metal oxide film to the TMDC film in a second phase.

A chain element (2), in particular a chain pin (4), for joining at least two chain links (3), characterized in that it comprises a surface layer (5) containing boron and vanadium, formed by at least one step of diffusing boron and vanadium in the areas of the chain element (2) which are close to the surface. The surface layer (5) containing boron and vanadium is formed by boriding and subsequently vanadizing a substrate material having a carbon content of 0.60 wt.-% to 1.0 wt.-%.

The metal material of the present disclosure includes: a metal base; and a film provided on a surface of the metal base and containing a fluorine-containing molybdenum compound, the fluorine-containing molybdenum compound being represented by the formula MoO.sub.xF.sub.y wherein x is a number from 0 to 2 and y is a number from 2 to 5.

Disclosed herein is a method for forming metal-oxides in the photoresist to improve profile control. The method includes infiltrating a metal oxide in a photoresist layer by pressurizing a methyl-containing material in a processing environment proximate a film stack. The film stack includes the photoresist layer, the photoresist layer being disposed on top of and in contact with an underlayer. The underlayer disposed on top of a substrate. The method includes etching the film stack including the photoresist layer implanted with the metal oxide.

Disclosed herein is a method for forming metal-oxides in the photoresist to improve profile control. The method includes infiltrating a metal oxide in a photoresist layer by pressurizing a methyl-containing material in a processing environment proximate a film stack. The film stack includes the photoresist layer, the photoresist layer being disposed on top of and in contact with an underlayer. The underlayer disposed on top of a substrate. The method includes etching the film stack including the photoresist layer implanted with the metal oxide.

A nickel-based alloy is coated with a silicate based nickel aluminide slurry diffusion coating.

A nickel-based alloy is coated with a silicate based nickel aluminide slurry diffusion coating.