The present invention relates to a method for producing a multilayer film comprising aluminum, chromium, oxygen and nitrogen, in a vacuum coating chamber, the multilayer film comprising layers of type A and layers of type B deposited alternate one of each other, wherein during deposition of the multilayer film at least one target comprising aluminum and chromium is operated as cathode by means of a PVD technique and used in this manner as material source for supplying aluminum and chromium, and an oxygen gas flow and a nitrogen gas flow are introduced as reactive gases in the vacuum chamber for reacting with aluminum and chromium, thereby supplying oxygen and nitrogen for forming the multilayer film, characterized in that: —The A layers are deposited as oxynitride layers of Al—Cr—O—N by using nitrogen and oxygen as reactive gas at the same time, —The B layers are deposited as nitride layers of Al—Cr—N by reducing the oxygen gas flow and by increasing the nitrogen gas flow in order to use only nitrogen as reactive gas for the formation of the Al—Cr—N layer, and wherein the relation between oxygen content and nitrogen content in the multilayer film correspond to a ratio in atomic percentage having a value between and including 1.8 and 4.

A vacuum cell including a vacuum chamber, a first bond, and a second bond is described. The first bond affixes a first portion of the vacuum cell to a second portion of the vacuum cell. The first bond has a first bonding temperature and a first debonding temperature greater than the first bonding temperature. The second bond affixes a third portion of the vacuum cell to a fourth portion of the vacuum cell. The second bond has a second bonding temperature and a second debonding temperature. The second bonding temperature is less than the first debonding temperature.

An intravascular stent and method of making an intervascular stent having a hybrid pattern a. The hybrid pattern comprises a plurality of circumferentially self-expansible members comprising a plurality of interconnected, geometrically deformable closed cells, adjacent self-expansible members interconnected by a plurality of bridge members linking a first interconnection between two closed cells in a first self-expansible member to a second interconnection between two closed cells in a second self-expansible member, wherein the second interconnection is circumferentially offset and non-adjacent to the first interconnection.

A part includes a base material, a colored layer on the base material, and a surface layer on the colored layer, wherein the colored layer contains Zr, and optionally, C and/or N, a ratio (H.sub.Zr .sub.oxide/H.sub.Zr) of a peak height derived from Zr oxide (H.sub.Zr oxide) to a peak height of Zr (H.sub.Zr) at an interface of the colored layer on the side of the surface layer is more than 0 and less than 4.5, the interface is a point where Zr is detected by sputtering the part from the side of the surface layer with an XPS depth direction analysis, and the ratio (H.sub.Zr oxide/H.sub.Zr) at a point where Ar sputtering is performed for 5 minutes from the interface of the colored layer on the side of the surface layer with the XPS depth direction analysis is 0 to less than 3. The surface layer is water-repellent and exhibits a sputtering time of 5 minutes or less

A part includes a base material, a colored layer, an intermediate layer, and a water-repellent-surface layer. The colored layer contains 35 at % to 99 at % of C, 0 at % to less than 40 at % of Cr, 0 at % to less than 15 at % of N, and more than 0 at % to less than 15 at % of O. The intermediate layer contains at least one metal atom selected from Cr, Zr, and Si; and an oxygen atom. The intermediate layer exhibits a sputtering time of 0.5 minutes or more to 9 minutes or less

A strain gauge includes a flexible substrate and a functional layer formed of a metal, an alloy, or a metal compound, the functional layer being directly on one surface of the substrate. The strain gauge includes a resistor formed of a film that includes Cr, CrN, and Cr.sub.2N and that is formed with α-Cr as a main component. The functional layer includes a function of promoting crystal growth of α-Cr and forming an α-Cr based film.

In a general aspect, a ceramic thin film with nanotwinned regions at a tunable volume fraction is manufactured. In some aspects, a method for manufacturing a ceramic thin film on a surface of a substrate in an evacuated chamber is disclosed. The ceramic thin film includes crystalline grains; and each of the crystalline grains includes one or more nanotwinned regions. The one or more nanotwinned regions have a volume fraction in a range of 30-80% of the ceramic thin film. The ceramic thin film comprises titanium, nitrogen, and boron. A plurality of targets including a plurality of sputtering materials is prepared. A gas atmosphere in the evacuated chamber is formed. Electric power is supplied to the plurality of targets to cause co-sputtering of the plurality of sputtering materials to form the ceramic thin film with the one or more nanotwinned regions.

A coated article is described herein that may comprise a substrate and an optical coating. The substrate may have a major surface comprising a first portion and a second portion. A first direction that is normal to the first portion of the major surface may not be equal to a second direction that is normal to the second portion of the major surface. The optical coating may be disposed on at least the first portion and the second portion of the major surface. The coated article may exhibit at the first portion of the substrate and at the second portion of the substrate hardness of about 8 GPa or greater at an indentation depth of about 50 nm or greater as measured on the anti-reflective surface by a Berkovich Indenter Hardness Test.

A sputtering apparatus includes a rotary target extending in a first direction, a gas supply bar disposed on the rotary target, and a substrate holder positioned opposite the gas supply bar with respect to the rotary target. The gas supply bar includes a first flow path extending in the first direction, and a second flow path spaced apart from the first flow path in the first direction and separated from the first flow path.

Disclosed in the embodiments of the present application are a microelectrode of a gene sequencing chip, a manufacturing method therefor, and a gene sequencing chip. The microelectrode comprises a substrate, a current collector layer formed on the substrate, and an electrode layer formed on the current collector layer; the current collector layer comprises a transition metal thin film or a nitride thin film thereof or a composite thin film of a transition metal and nitride thereof, and the electrode layer comprises a nitrogen oxide thin film of the transition metal, which is formed on the transition metal thin film or the nitride thin film thereof or the composite thin film of the transition metal and nitride thereof The embodiments of the present application improve the per unit area voltage driving capabilities of a microelectrode in a gene sequencing chip, can meet requirements for an ultra-high number of cycles, and improve the throughput and stability of a gene sequencing chip.