Patent classifications
C23C16/00
Black diamond like carbon (DLC) coated articles and methods of making the same
A device comprising: a substrate; a first coating deposited on the substrate; an intermediate coating deposited on the first coating, wherein the first coating is interposed between the substrate and the intermediate coating; and a second coating deposited on the intermediate coating, wherein the intermediate coating is interposed between the first coating and the second coating, and the second coating is outermost and black. The substrate, the first coating, the intermediate coating and the second coating define at least one of a jewelry item and a component of a jewelry item.
Black diamond like carbon (DLC) coated articles and methods of making the same
A device comprising: a substrate; a first coating deposited on the substrate; an intermediate coating deposited on the first coating, wherein the first coating is interposed between the substrate and the intermediate coating; and a second coating deposited on the intermediate coating, wherein the intermediate coating is interposed between the first coating and the second coating, and the second coating is outermost and black. The substrate, the first coating, the intermediate coating and the second coating define at least one of a jewelry item and a component of a jewelry item.
Steel sheet having a hot-dip Zn—Al—Mg-based coating film excellent in terms of surface appearance and method of manufacturing the same
A steel sheet has a hot-dip Zn—Al—Mg-based coating film, the coating film containing 1 mass % to 22 mass % of Al and 0.1 mass % to 10 mass % of Mg on a surface of the steel sheet, in which an X-ray diffraction peak intensity ratio of a Mg—Zn compound phase in the coating film, that is, MgZn.sub.2/Mg.sub.2Zn.sub.11, is 0.2 or less.
USING PELLETIZED METAL-DECORATED MATERIALS IN AN INDUCTION MELTING FURNACE
Inventive techniques for forming unique compositions of matter are disclosed, as well as various advantageous physical characteristics, and associated properties of the resultant materials. In particular, metal(s) (including various alloys, such as Inconel superalloys) are characterized by having carbon disposed within the metal lattice structure thereof. The carbon is primarily, or entirely, present at interstitial sites of the metal lattice, and may be present in amounts ranging from about 15 wt % to about 90 wt %. The carbon, moreover, forms non-polar covalent bonds with both metal atoms of the lattice and other carbon atoms present in the lattice. This facilitates substantially homogeneous dispersal of the carbon throughout the resultant material, conveying unique and advantageous properties such as strength-to-weight ratio, density, mechanical toughness, sheer strength, flex strength, hardness, anti-corrosiveness, electrical and/or thermal conductivity, etc. as described herein. In some approaches, the composition of matter may be powderized, or the powder may be pelletized.
METHOD FOR FORMING POLYCRYSTALLINE SILICON FILM
A method for forming a polycrystalline silicon film includes forming a first amorphous silicon film having an island shape on a substrate. The method includes forming a second amorphous silicon film, the second amorphous silicon film covering the first amorphous silicon film. The method includes forming a third amorphous silicon film on the second amorphous silicon film. The method includes heating the substrate to a first temperature at which the first amorphous silicon film crystallizes more easily than the second amorphous silicon film. The first amorphous silicon film crystallizes at a temperature lower than that of the second amorphous silicon film.
SUBSTRATE PROCESSING APPARATUS
A substrate processing apparatus may include a chamber having a working space, maintaining a vacuum state, and including an upper wall positioned on the working space, a nozzle assembly positioned in the working space, and including nozzles, and a lifting module including a frame positioned outside of the chamber, a lifting part that lifts the frame, and at least one shaft passing through the upper wall, connected to each of the frame and the nozzle assembly, and extending in a direction of gravity.
EPITAXIAL REACTOR SYSTEMS AND METHODS OF USING SAME
A reactor system may comprise a first reaction chamber and a second reaction chamber. The first and second reaction chambers may each comprise a reaction space enclosed therein, a susceptor disposed within the reaction space, and a fluid distribution system in fluid communication with the reaction space. The susceptor in each reaction chamber may be configured to support a substrate. The reactor system may further comprise a first reactant source, wherein the first reaction chamber and the second reaction chamber are fluidly coupled to the first reactant source at least partially by a first reactant shared line. The reactor system may be configured to deliver a first reactant from the first reactant source to the first reaction chamber and a second reaction chamber through the first reactant shared line.
Anti-arc zero field plate
Embodiments of the present invention generally relate to apparatus for reducing arcing and parasitic plasma in substrate processing chambers. The apparatus generally include a processing chamber having a substrate support, a backing plate, and a showerhead disposed therein. A showerhead suspension electrically couples the backing plate to the showerhead. An electrically conductive bracket is coupled to the backing plate and spaced apart from the showerhead. The electrically conductive bracket may include a plate, a lower portion, an upper portion, and a vertical extension. The electrically conductive bracket contacts an electrical isolator.
Process for producing flexible organic-inorganic laminates
The present invention is in the field of processes for producing flexible organic-inorganic laminates as well as barrier films comprising flexible organic-inorganic laminates by atomic layer deposition. In particular the present invention relates to a process for producing a laminate comprising more than once the sequence comprising: (a) depositing an inorganic layer by performing 4 to 150 cycles of an atomic layer deposition process, and (b) depositing an organic layer comprising sulfur by a molecular layer deposition process.
Non-line of sight deposition of erbium based plasma resistant ceramic coating
Described herein is a method of depositing a plasma resistant ceramic coating onto a surface of a chamber component using a non-line-of-sight (NLOS) deposition process, such as atomic layer deposition (ALD) and chemical vapor deposition (CVD). The plasma resistant ceramic coating consists of an erbium containing oxide, an erbium containing oxy-fluoride, or an erbium containing fluoride. Also described are chamber components having a plasma resistant ceramic coating of an erbium containing oxide, an erbium containing oxy-fluoride, or an erbium containing fluoride.