A pressure vessel has a first end with a first boss, the first boss having a first outer surface. The vessel includes a liner having a second outer surface, a shell disposed over the second outer surface, and a first vent. The first vent is formed onto at least a portion of the first outer surface and at least a portion of the second outer surface. The first vent includes a texture that provides a higher rate of gas flow through the first vent than through a portion of an interface of the liner and shell lacking the texture. In another aspect, a pressure vessel has a first end and a second end, a plurality of first longitudinal vents and a plurality of second longitudinal vents. At least one of first longitudinal vents is circumferentially offset around the pressure vessel from at least one of the second longitudinal vents.

A method is disclosed for producing a plasmonic-nanostructure spectrally selective solar absorber having high solar absorptance, low thermal emittance, and superior thermal stability. The method includes the steps of providing an alloy structure containing a base metal and a copper alloying impurity, wherein copper has a weight percent concentration in the alloy of at least 0.25%; and applying an alkaline solution to a surface of the alloy structure to selectively dissolve base metal elements at the surface resulting in fabrication of sponge-like copper nanostructures on the surface configured to scatter, trap, and absorb light in solar wavelengths.

A plasma processing apparatus includes: a processing container which defines a processing space; a microwave generator; a dielectric having an opposing surface which faces the processing space; a slot plate formed with a plurality of slots; and a heating member provided within the slot plate. The slot plate is provided on a surface of the dielectric at an opposite side to the opposing surface to radiate microwaves for plasma excitation to the processing space through the dielectric based on the microwaves generated by the microwave generator.

A method including: a first step of forming a mask member having a structure in which a magnetic metal member provided with through-holes is in tight contact with one surface of a film; a second step of forming a plurality of preliminary opening patterns by subjecting the film to penetration processing by irradiating laser beams at predetermined regular positions in the plurality of through-holes; and a third step of performing laser processing so as to form each opening pattern over the corresponding preliminary opening pattern, is provided.

A method for selectively removing an aluminum-silicon coating fired on a surface of a metallic structure is described. The method includes the step of contacting the coating with molten potassium hydroxide (KOH), under conditions sufficient to remove the coating without substantially affecting the metallic surface. Methods for preparing a magnetic component are also described. They involve masking pre-selected regions of the surface of the component, using an aluminum-silicon coating that is fired onto the surface, prior to a nitriding step. The coating is then removed according to the procedure outlined herein.

A method for selectively removing an aluminum-silicon coating fired on a surface of a metallic structure is described. The method includes the step of contacting the coating with molten potassium hydroxide (KOH), under conditions sufficient to remove the coating without substantially affecting the metallic surface. Methods for preparing a magnetic component are also described. They involve masking pre-selected regions of the surface of the component, using an aluminum-silicon coating that is fired onto the surface, prior to a nitriding step. The coating is then removed according to the procedure outlined herein.

The dry etching method of the present invention etches a metal film formed on a surface of a workpiece by bringing etching gases each containing a β-diketone into contact with the metal film. The method includes: a first etching step of bringing a first etching gas containing a first β-diketone into contact with the metal film; and a second etching step of bringing a second etching gas containing a second β-diketone into contact with the metal film after the first etching step. The first β-diketone is a compound capable of forming a first complex through a reaction with the metal film. The second β-diketone is a compound capable of forming a second complex having a lower sublimation point than the first complex through a reaction with the metal film.

Provided are methods for etching films comprising transition metals. Certain methods involve activating a substrate surface comprising at least one transition metal, wherein activation of the substrate surface comprises exposing the substrate surface to heat, a plasma, an oxidizing environment, or a halide transfer agent to provide an activated substrate surface; and exposing the activated substrate surface to a reagent comprising a Lewis base or pi acid to provide a vapor phase coordination complex comprising one or more atoms of the transition metal coordinated to one or more ligands from the reagent. Certain other methods provide selective etching from a multi-layer substrate comprising two or more of a layer of Co, a layer of Cu and a layer of Ni.

Provided are methods for etching films comprising transition metals. Certain methods involve activating a substrate surface comprising at least one transition metal, wherein activation of the substrate surface comprises exposing the substrate surface to heat, a plasma, an oxidizing environment, or a halide transfer agent to provide an activated substrate surface; and exposing the activated substrate surface to a reagent comprising a Lewis base or pi acid to provide a vapor phase coordination complex comprising one or more atoms of the transition metal coordinated to one or more ligands from the reagent. Certain other methods provide selective etching from a multi-layer substrate comprising two or more of a layer of Co, a layer of Cu and a layer of Ni.

Provided is a substrate processing method of filling a recess of a predetermined uneven pattern formed on a substrate with a film forming material by performing a first film forming processing, a first etching processing and a second film forming processing on the substrate, using a vertical substrate processing apparatus and a control apparatus controlling operations of the vertical substrate processing apparatus. The method includes calculating a first film forming condition, a first etching condition, and a second film forming condition by the control apparatus such that the film forming material is filled in the recess without any void after the second film forming processing; and performing the first film forming processing, the first etching processing and the second film forming processing on the substrate based on the calculated first film forming condition, first etching condition and second film forming condition.