A CMP method uses a slurry including a first metal oxide or semiconductor oxide particles (first oxide particles) in water. At least one particle feature is selected from (i) first oxide particles having a polydispersity >30%, (ii) a coating on first oxide particles including Group I or Group II ions, transition metal oxide, or organic material, (iii) first oxide particles mixed with fumed oxide particles, (iv) first oxide particles with average primary size >50 nm mixed with fumed oxide particles having average primary size <25 nm, and (v) first oxide particles with a per surface area per unit mass <100 m.sup.2/gm mixed with another oxide particle type having an average area per unit mass >150 m.sup.2/gm. A substrate having an alumina surface is placed into a CMP apparatus, and CMP is performed with a rotating polishing pad and the slurry to polish the alumina surface.

The present invention relates to a polishing composition used in application in which a polishing object having a cobalt element-containing layer is polished, including: a cobalt dissolution inhibitor; and a pH adjusting agent, wherein the polishing composition has a pH of 4 or more and 12 or less, and the cobalt dissolution inhibitor is at least one member selected from the group consisting of an organic compound having an ether bond, an organic compound having a hydroxyl group, an organic compound having a carboxyl group and having a molecular weight of 130 or more, and salts thereof. According to the present invention, there is provided a polishing composition capable of suppressing the dissolution of a cobalt element-containing layer when a polishing object having a cobalt element-containing layer is polished.

The present invention relates to a polishing composition used in application in which a polishing object having a cobalt element-containing layer is polished, including: a cobalt dissolution inhibitor; and a pH adjusting agent, wherein the polishing composition has a pH of 4 or more and 12 or less, and the cobalt dissolution inhibitor is at least one member selected from the group consisting of an organic compound having an ether bond, an organic compound having a hydroxyl group, an organic compound having a carboxyl group and having a molecular weight of 130 or more, and salts thereof. According to the present invention, there is provided a polishing composition capable of suppressing the dissolution of a cobalt element-containing layer when a polishing object having a cobalt element-containing layer is polished.

A chemical mechanical polishing touch-up tool includes a pedestal configured to support a substrate, a plurality of jaws configured to center the substrate on the pedestal, a loading ring to apply pressure to an annular region on a back side of the substrate on the pedestal, a polishing ring to bring a polishing material into contact with an annular region on a front side of the substrate that is aligned with the annular region on the back side of the substrate, and a polishing ring actuator to rotate the polishing ring to cause relative motion between the polishing ring and the substrate.

The invention provides a chemical mechanical polishing solution for metal and metal nitride substrates. The polishing solution includes a solvent and functionalized carbon-based particles having oxygen-containing functional groups. The functionalized carbon-based particles having oxygen-containing functional groups react with a peroxy moiety to increase oxygen to carbon atomic ratio on the functionalized carbon-based particles. The functionalized carbon-based particles contain at least 10 weight percent of an sp3-containing structure, the functionalized carbon-based particles include at least 0.01 atomic percent oxygen and a surface of the functionalized carbon-based particles has an atomic oxygen to carbon ratio of at least 0.01.

The invention provides a chemical mechanical polishing solution for metal and metal nitride substrates. The polishing solution includes a solvent and functionalized carbon-based particles having oxygen-containing functional groups. The functionalized carbon-based particles having oxygen-containing functional groups react with a peroxy moiety to increase oxygen to carbon atomic ratio on the functionalized carbon-based particles. The functionalized carbon-based particles contain at least 10 weight percent of an sp3-containing structure, the functionalized carbon-based particles include at least 0.01 atomic percent oxygen and a surface of the functionalized carbon-based particles has an atomic oxygen to carbon ratio of at least 0.01.