The present invention is directed to a method of using accelerated corrosion to remove metallic assets.

The present invention is directed to a method of using accelerated corrosion to remove metallic assets.

Methods described herein allow for a smoothing of a particular material on a substrate independently of smoothing a different material on the substrate. Both materials may be exposed to the same reactant but form different skins (e.g., reactive layers). One skin may allow for smoothing of one material, while the other skin may protect or preserve the underlying material. Removing one of the skins may result in a smoother underlying material. The skins may be formed by a dry process and removed by a wet process, or the skins may be formed by a wet process and removed by a dry process. The change of the reaction medium between wet and dry for reaction and removal may allow for highly selective chemistries to result in smoothing one material while not affecting the underlying substrate or other materials at the surface. Substrates produced by these methods are described herein.

Vapor deposition methods for depositing transition metal dichalcogenide (TMDC) films, such as rhenium sulfide thin films, are provided. In some embodiments TMDC thin films are deposited using a deposition cycle in which a substrate in a reaction space is alternately and sequentially contacted with a vapor phase transition metal precursor, such as a transition metal halide, a reactant comprising a reducing agent, such as NH.sub.3 and a chalcogenide precursor. In some embodiments rhenium sulfide thin films are deposited using a vapor phase rhenium halide precursor, a reducing agent and a sulfur precursor. The deposited TMDC films can be etched by chemical vapor etching using an oxidant such as O.sub.2 as the etching reactant and an inert gas such as N.sub.2 to remove excess etching reactant. The TMDC thin films may find use, for example, as 2D materials.

A method of manufacturing a device useable in DNA or genome sequencing comprises disposing pairs of electrodes on a substrate, the electrodes within each pair separated by a nanogap; depositing a resist layer over the electrodes; patterning the resist layer to create an exposed region on each electrode at or near each nanogap; roughening the electrode surface within each exposed region using various methods; and exposing the exposed regions to biomolecules, wherein one biomolecule bridges each nanogap of each electrode pair, with each end of each biomolecule bound to the electrodes at each exposed region.

A method of manufacturing a device useable in DNA or genome sequencing comprises disposing pairs of electrodes on a substrate, the electrodes within each pair separated by a nanogap; depositing a resist layer over the electrodes; patterning the resist layer to create an exposed region on each electrode at or near each nanogap; roughening the electrode surface within each exposed region using various methods; and exposing the exposed regions to biomolecules, wherein one biomolecule bridges each nanogap of each electrode pair, with each end of each biomolecule bound to the electrodes at each exposed region.

One process that may be used to remove material from a surface is ion etching. In certain cases, ion etching involves delivery of both ions and a reactive gas to a substrate. The disclosed embodiments permit local high pressure delivery of reactive gas to a substrate while maintaining a much lower pressure on portions of the substrate that are outside of the local high pressure delivery area. The low pressure is achieved by confining the high pressure reactant delivery to a small area and vacuuming away excess reactants and byproducts as they leave this small area and before they enter the larger substrate processing region. The disclosed techniques may be used to increase throughput while minimizing deleterious collisions between ions and other species present in the substrate processing region.

One process that may be used to remove material from a surface is ion etching. In certain cases, ion etching involves delivery of both ions and a reactive gas to a substrate. The disclosed embodiments permit local high pressure delivery of reactive gas to a substrate while maintaining a much lower pressure on portions of the substrate that are outside of the local high pressure delivery area. The low pressure is achieved by confining the high pressure reactant delivery to a small area and vacuuming away excess reactants and byproducts as they leave this small area and before they enter the larger substrate processing region. The disclosed techniques may be used to increase throughput while minimizing deleterious collisions between ions and other species present in the substrate processing region.

Exemplary etching methods may include flowing a fluorine-containing precursor and a hydrogen-containing precursor into a remote plasma region of a semiconductor processing chamber. The methods may include forming a plasma of the fluorine-containing precursor and the hydrogen-containing precursor to produce plasma effluents. The methods may include flowing the plasma effluents into a substrate processing region housing a substrate. The substrate may include an exposed region of a tantalum or titanium material and an exposed region of a silicon-containing material. The methods may include contacting the substrate with the plasma effluents. The methods may include removing the tantalum or titanium material selectively to the silicon-containing material. The tantalum or titanium material may be removed at a rate of at least 20:1 relative to the silicon-containing material.

A semiconductor interconnect structure having a first electrically conductive structure having a plurality of bottom portions; a dielectric capping layer, at least a portion of the dielectric capping layer being in contact with a first bottom portion of the plurality of bottom portions; and a second electrically conductive structure in electrical contact with a second bottom portion of the plurality of bottom portions. A method of forming the interconnect structure is also provided.