Patent classifications
C23G5/00
Chamber Cleaning and Semiconductor Etching Gases
The present invention relates to fluoroolefin compositions useful as gases for CVD semiconductor manufacture, particularly for etching applications including methods for removing surface deposits from the interior of a chemical vapor deposition chamber by using an activated gas mixture, and methods for etching the surface of a semiconductor.
Chamber Cleaning and Semiconductor Etching Gases
The present invention relates to fluoroolefin compositions useful as gases for CVD semiconductor manufacture, particularly for etching applications including methods for removing surface deposits from the interior of a chemical vapor deposition chamber by using an activated gas mixture, and methods for etching the surface of a semiconductor.
Chamber Cleaning and Semiconductor Etching Gases
The present invention relates to fluoroolefin compositions useful as gases for CVD semiconductor manufacture, particularly for etching applications including methods for removing surface deposits from the interior of a chemical vapor deposition chamber by using an activated gas mixture, and methods for etching the surface of a semiconductor.
DRY ETCHING METHOD, METHOD FOR PRODUCING SEMICONDUCTOR ELEMENT, AND CLEANING METHOD
Provided is a dry etching method capable of selectively etching an etching object containing lanthanum as compared with a non-etching object at a sufficient etching rate without plasma. The dry etching method includes a dry etching step of bringing an etching gas containing nitrosyl fluoride into contact with a member to be etched (12) having an etching object that is to be etched by the etching gas and having a non-etching object that is not to be etched by the etching gas, to selectively etch the etching object as compared with the non-etching object without plasma. The etching object contains lanthanum.
Apparatus and Method for Wafer Oxide Removal and Reflow Treatment
The present invention relates to an apparatus and method for wafer oxide removal and reflow treatment. In particular, the present invention relates to an apparatus for wafer oxide removal and reflow treatment, comprising: a heating plate, a sample plate for supporting a wafer sample above the heating plate, and an electron attachment pin plate above the sample plate, wherein the heating plate is configured to be capable of moving up and down, and contacting and heating the sample plate.
Substrate processing method and substrate processing apparatus
A substrate processing method processes a substrate which has a metal layer on a principal surface. The substrate processing method includes a metal oxide layer forming step in which an oxidizing fluid is supplied toward the principal surface of the substrate, thereby forming a metal oxide layer constituted of one atomic layer or several atomic layers on a surface layer of the metal layer and a metal oxide layer removing step in which an etching fluid containing at least one of water in a gaseous state and water in a mist state as well as a reactive gas that reacts with the metal oxide layer together with the water is supplied toward the principal surface of the substrate, thereby etching the metal oxide layer and selectively removing it from the substrate. Then, cycle processing in which the metal oxide layer forming step and the metal oxide layer removing step are given as one cycle is executed at least in one cycle, thereby controlling the etching amount of the metal layer for each cycle at an accuracy of a nanometer or less.
Composition for lubricating and/or descaling during hot working of metals
A composition for lubricating and/or descaling in the hot processing of metals includes a solid mixture containing the following constituents: (a) 20 to 60% by weight of condensed alkali phosphate, (b) 10 to 40% by weight boron compound selected from borosilicate glass, boric acid, boric acid salt, or a mixture thereof, (c) 10 to 30% by weight alkali or alkaline earth sulphates, (d) 5 to 25% by weight fatty acid, fatty acid salt, or a mixture thereof. The sum of the constituents (a) and (b) constitutes at least 50% by weight of the mixture and the sum of the constituents (a) to (d) constitutes at least 85% by weight of the mixture.
Composition for lubricating and/or descaling during hot working of metals
A composition for lubricating and/or descaling in the hot processing of metals includes a solid mixture containing the following constituents: (a) 20 to 60% by weight of condensed alkali phosphate, (b) 10 to 40% by weight boron compound selected from borosilicate glass, boric acid, boric acid salt, or a mixture thereof, (c) 10 to 30% by weight alkali or alkaline earth sulphates, (d) 5 to 25% by weight fatty acid, fatty acid salt, or a mixture thereof. The sum of the constituents (a) and (b) constitutes at least 50% by weight of the mixture and the sum of the constituents (a) to (d) constitutes at least 85% by weight of the mixture.
Thermal scavenging system to remove residue from interior surface of seamless tube in a bright annealing furnace
A thermal scavenging system to remove remnant lubricants from interior of bright annealing steel tubes is provided. The system is retrofitted to bright annealing furnace with a conveyer belt and hydrogen gas source and comprises hydrogen-blowing rack, flexible rubber hoses and a lighter. The tubes are placed on the conveyer belt. The hydrogen-blowing rack comprises a hydrogen gas manifold and outlet nozzles connected to tailing ends of the tubes by flexible rubber hoses. At the leading ends of the tubes, a lighter ignites the hydrogen gas to insure all tubes are filled with hydrogen gas, instead of atmospheric air. Then rubber hoses are unplugged from the leading ends and the hydrogen-filled tubes are fed into the furnace for heat treatment. At high annealing temperature, lubricant remnants are burned off the tube's interior surfaces. A negative difference in atmospheric pressure, combustion products of hydrocarbons are scavenged out from the tailing ends.
Thermal scavenging system to remove residue from interior surface of seamless tube in a bright annealing furnace
A thermal scavenging system to remove remnant lubricants from interior of bright annealing steel tubes is provided. The system is retrofitted to bright annealing furnace with a conveyer belt and hydrogen gas source and comprises hydrogen-blowing rack, flexible rubber hoses and a lighter. The tubes are placed on the conveyer belt. The hydrogen-blowing rack comprises a hydrogen gas manifold and outlet nozzles connected to tailing ends of the tubes by flexible rubber hoses. At the leading ends of the tubes, a lighter ignites the hydrogen gas to insure all tubes are filled with hydrogen gas, instead of atmospheric air. Then rubber hoses are unplugged from the leading ends and the hydrogen-filled tubes are fed into the furnace for heat treatment. At high annealing temperature, lubricant remnants are burned off the tube's interior surfaces. A negative difference in atmospheric pressure, combustion products of hydrocarbons are scavenged out from the tailing ends.