Patent classifications
C23G5/00
Atomic layer etching processes
Atomic layer etching (ALE) processes are disclosed. In some embodiments, the methods comprise at least one etch cycle in which the substrate is alternately and sequentially exposed to a first vapor phase non-metal halide reactant and a second vapor phase halide reactant. In some embodiments both the first and second reactants are chloride reactants. In some embodiments the first reactant is fluorinating gas and the second reactant is a chlorinating gas. In some embodiments a thermal ALE cycle is used in which the substrate is not contacted with a plasma reactant.
Atomic layer etching processes
Atomic layer etching (ALE) processes are disclosed. In some embodiments, the methods comprise at least one etch cycle in which the substrate is alternately and sequentially exposed to a first vapor phase non-metal halide reactant and a second vapor phase halide reactant. In some embodiments both the first and second reactants are chloride reactants. In some embodiments the first reactant is fluorinating gas and the second reactant is a chlorinating gas. In some embodiments a thermal ALE cycle is used in which the substrate is not contacted with a plasma reactant.
METAL MEMBER, METAL-RESIN COMPOSITE, AND METHOD FOR MANUFACTURING METAL MEMBER
A metal member has a region in which a dendritic layer is formed on a surface. The region has an arithmetic average roughness Ra of 20.0 μm or less.
Method and Apparatus for Laser Assisted Power Washing
A process for removing a material that is adhered to an underlying surface includes using a laser beam to heat the material to reduce the strength of adhesion between the material and the underlying surface. A stream of gas is directed at the heated material to displace the heated material from the underlying surface.
Method and Apparatus for Laser Assisted Power Washing
A process for removing a material that is adhered to an underlying surface includes using a laser beam to heat the material to reduce the strength of adhesion between the material and the underlying surface. A stream of gas is directed at the heated material to displace the heated material from the underlying surface.
Surface Conditioning Of Railway Tracks Or Wheels
A surface conditioning device for railway track rails and/or railway vehicle wheels includes a DC power supply, a supply of gas, a plasma delivery head connected to receive DC power from the power supply and gas from the gas supply, and an igniter for igniting the gas in the plasma delivery head. In use, plasma is generated within the delivery head by ignition of the gas in the delivery head. Plasma with gas is blown from the delivery head onto a railway track rail and/or railway vehicle wheel, thereby conditioning the rail and/or wheel.
Surface Conditioning Of Railway Tracks Or Wheels
A surface conditioning device for railway track rails and/or railway vehicle wheels includes a DC power supply, a supply of gas, a plasma delivery head connected to receive DC power from the power supply and gas from the gas supply, and an igniter for igniting the gas in the plasma delivery head. In use, plasma is generated within the delivery head by ignition of the gas in the delivery head. Plasma with gas is blown from the delivery head onto a railway track rail and/or railway vehicle wheel, thereby conditioning the rail and/or wheel.
COMPOSITION FOR PHOSPHATE FILM OPTIMIZING MN CONTENT AND A METHOD FOR PHOSPHATE TREATMENT OF ZN ELECTRIC-PLATED STEEL SHEET
A composition for a phosphate film of a Zn electric-plated steel sheet may comprise zinc (Zn), nickel (Ni), and manganese (Mn), wherein a content of Mn is 6 to 8 wt %.
COMPOSITION FOR PHOSPHATE FILM OPTIMIZING MN CONTENT AND A METHOD FOR PHOSPHATE TREATMENT OF ZN ELECTRIC-PLATED STEEL SHEET
A composition for a phosphate film of a Zn electric-plated steel sheet may comprise zinc (Zn), nickel (Ni), and manganese (Mn), wherein a content of Mn is 6 to 8 wt %.
ATOMIC LAYER ETCHING PROCESSES
Atomic layer etching (ALE) processes are disclosed. In some embodiments, the methods comprise at least one etch cycle in which the substrate is alternately and sequentially exposed to a first vapor phase non-metal halide reactant and a second vapor phase halide reactant. In some embodiments both the first and second reactants are chloride reactants. In some embodiments the first reactant is fluorinating gas and the second reactant is a chlorinating gas. In some embodiments a thermal ALE cycle is used in which the substrate is not contacted with a plasma reactant.