Patent classifications
C25D3/00
PRODUCTION PROCESS FOR METAL MATRIX NANOCOMPOSITE CONTAINING ORIENTED GRAPHENE SHEETS
Provided is a metal matrix nanocomposite comprising: (a) a metal or metal alloy as a matrix material; and (b) multiple graphene sheets that are dispersed in said matrix material, wherein said multiple graphene sheets are substantially aligned to be parallel to one another and are in an amount from 0.1% to 95% by volume based on the total nanocomposite volume; wherein the multiple graphene sheets contain single-layer or few-layer graphene sheets selected from pristine graphene, graphene oxide, reduced graphene oxide, graphene fluoride, graphene chloride, graphene bromide, graphene iodide, hydrogenated graphene, nitrogenated graphene, doped graphene, chemically functionalized graphene, or a combination thereof and wherein the chemically functionalized graphene is not graphene oxide. The metal matrix exhibits a combination of exceptional tensile strength, modulus, thermal conductivity, and/or electrical conductivity.
Microscale three-dimensional electric devices and methods of making the same
Functionalized microscale 3D devices and methods of making the same. The 3D microdevice can be realized with the combination of top-down (lithographic) and bottom-up (origami-inspired self-assembly) processes. The origami-inspired self-assembly approach combined with a top-down process can realize 3D microscale polyhedral structures with metal/semiconductor materials patterned on dielectric materials. In some embodiments, the functionalized 3D microdevices include resonator-based passive sensors, i.e. split ring resonators (SRRs), on 3D, transparent, free-standing, dielectric media (Al.sub.2O.sub.3).
FILM FORMING METHOD FOR METAL FILM AND FILM FORMING APPARATUS THEREFOR
In a film forming method, in a state where a metal solution is sealed in a first accommodation chamber of a housing with a solid electrolyte membrane and a fluid is sealed in a second accommodation chamber of a placing table with a thin film, a substrate is placed on the placing table and the placing table and the housing are moved relative to each other to cause the substrate to be interposed between the solid electrolyte membrane and the thin film, the solid electrolyte membrane and the thin film are pressed against the substrate interposed therebetween to cause the solid electrolyte membrane and the thin film to conform to a surface and a rear surface of the substrate, thereby forming a metal film.
FILM FORMING METHOD FOR METAL FILM AND FILM FORMING APPARATUS THEREFOR
In a film forming method, in a state where a metal solution is sealed in a first accommodation chamber of a housing with a solid electrolyte membrane and a fluid is sealed in a second accommodation chamber of a placing table with a thin film, a substrate is placed on the placing table and the placing table and the housing are moved relative to each other to cause the substrate to be interposed between the solid electrolyte membrane and the thin film, the solid electrolyte membrane and the thin film are pressed against the substrate interposed therebetween to cause the solid electrolyte membrane and the thin film to conform to a surface and a rear surface of the substrate, thereby forming a metal film.
Nickel solution for forming film and film-forming method using same
A nickel solution for forming a film that can suppress generation of hydrogen gas between a solid electrolyte membrane and a substrate while the solid electrolyte membrane and the substrate are brought into contact with each other. The pH of the nickel solution for forming a film is in the range of 4.2 to 6.1. The nickel solution for forming a film further contains a pH buffer solution that has a buffer function in the range of the pH and does not form insoluble salts or complexes with the nickel ions during formation of the film.
Nickel solution for forming film and film-forming method using same
A nickel solution for forming a film that can suppress generation of hydrogen gas between a solid electrolyte membrane and a substrate while the solid electrolyte membrane and the substrate are brought into contact with each other. The pH of the nickel solution for forming a film is in the range of 4.2 to 6.1. The nickel solution for forming a film further contains a pH buffer solution that has a buffer function in the range of the pH and does not form insoluble salts or complexes with the nickel ions during formation of the film.
Film forming method for metal film and film forming apparatus therefor
In a film forming method, in a state where a metal solution is sealed in a first accommodation chamber of a housing with a solid electrolyte membrane and a fluid is sealed in a second accommodation chamber of a placing table with a thin film, a substrate is placed on the placing table and the placing table and the housing are moved relative to each other to cause the substrate to be interposed between the solid electrolyte membrane and the thin film, the solid electrolyte membrane and the thin film are pressed against the substrate interposed therebetween to cause the solid electrolyte membrane and the thin film to conform to a surface and a rear surface of the substrate, thereby forming a metal film.
Film forming method for metal film and film forming apparatus therefor
In a film forming method, in a state where a metal solution is sealed in a first accommodation chamber of a housing with a solid electrolyte membrane and a fluid is sealed in a second accommodation chamber of a placing table with a thin film, a substrate is placed on the placing table and the placing table and the housing are moved relative to each other to cause the substrate to be interposed between the solid electrolyte membrane and the thin film, the solid electrolyte membrane and the thin film are pressed against the substrate interposed therebetween to cause the solid electrolyte membrane and the thin film to conform to a surface and a rear surface of the substrate, thereby forming a metal film.
Pulse plating of lithium material in electrochemical devices
The present invention is directed to battery system and operation thereof. In an embodiment, lithium material is plated onto the anode region of a lithium secondary battery cell by a pulsed current. The pulse current may have both positive and negative polarity. One of the polarities causes lithium material to plate onto the anode region, and the opposite polarity causes lithium dendrites to be removed. There are other embodiments as well.
Pulse plating of lithium material in electrochemical devices
The present invention is directed to battery system and operation thereof. In an embodiment, lithium material is plated onto the anode region of a lithium secondary battery cell by a pulsed current. The pulse current may have both positive and negative polarity. One of the polarities causes lithium material to plate onto the anode region, and the opposite polarity causes lithium dendrites to be removed. There are other embodiments as well.