An interconnect structure of a semiconductor device includes a conductive via and a barrier layer lining an interface between a dielectric layer and the conductive via. The barrier layer is selectively deposited along sidewalls of a recess formed in a dielectric layer. The conductive via is formed by selectively electroplating electrically conductive material such as rhodium, iridium, or platinum in an opening of the recess, where the conductive via is grown upwards from an exposed metal surface at a bottom of the recess. The conductive via includes an electrically conductive material having a low electron mean free path, low electrical resistivity, and high melting point. The interconnect structure of the semiconductor device has reduced via resistance and improved resistance to electromigration and/or stress migration.

A textile machine tool part (11) that is used in textile processing in a textile machine and a method for producing same are disclosed. The textile machine tool part (11) has a tool core (16) made of a core material and is coated, at least in part, with a wear-resistant coating. The wear-resistant coating (17) is applied to a core surface (18) that has a first microstructure (19). The first microstructure (19) is preferably created using electrochemical etching in the core surface (18). The wear-resistant coating (17) applied thereto is preferably applied directly to at least a section of the core surface (18) having the first microstructure (19) using electrochemical deposition and has a layer thickness of a maximum of 20 μm.

A textile machine tool part (11) that is used in textile processing in a textile machine and a method for producing same are disclosed. The textile machine tool part (11) has a tool core (16) made of a core material and is coated, at least in part, with a wear-resistant coating. The wear-resistant coating (17) is applied to a core surface (18) that has a first microstructure (19). The first microstructure (19) is preferably created using electrochemical etching in the core surface (18). The wear-resistant coating (17) applied thereto is preferably applied directly to at least a section of the core surface (18) having the first microstructure (19) using electrochemical deposition and has a layer thickness of a maximum of 20 μm.

An electronic circuit, comprising: an integrated substrate structure comprising one or more electrically conductive traces comprising plating on a laser-etched, non-conductive isolated portion of the integrated substrate structure defining each electrically conductive trace; one or more electrically conductive pads at one or more predetermined positions along the one or more electrically conductive traces; and an electrical component surface mounted to the at least one electrically conductive pad with interconnect and bonding material.

An electronic circuit, comprising: an integrated substrate structure comprising one or more electrically conductive traces comprising plating on a laser-etched, non-conductive isolated portion of the integrated substrate structure defining each electrically conductive trace; one or more electrically conductive pads at one or more predetermined positions along the one or more electrically conductive traces; and an electrical component surface mounted to the at least one electrically conductive pad with interconnect and bonding material.

A Ni-plated steel sheet includes a base steel sheet and a Ni-based coating layer that is disposed on a surface of the base steel sheet. The Ni-based coating layer includes a Fe—Ni alloy region that is formed on the surface of the base steel sheet. The Fe—Ni alloy region includes a mixed phase composed of a bcc phase and an fcc phase, and a component of the Fe—Ni alloy region includes 5 mass % or more of Fe and a remainder including 90 mass % or more of Ni.

A method is provided for fabricating a terminal electrode. The terminal electrode is applied on a multilayer ceramic capacitor (MLCC). The method prints inner electrodes on full area together with protective layers. The MLCC uses the thickness of thinned dielectric ceramic layers and the stacking of nickel inner-electrode layers. High capacitance is achieved at ends and sides with high electrode-to-ceramic ratios. Thus, the present invention uses a coating technology of ultra-low-temperature electrochemical deposition to fabricate low internal-stress MLCC terminal electrodes together with insulating protective layers for improving MLCC yield while cost reduced.

A method is provided for fabricating a terminal electrode. The terminal electrode is applied on a multilayer ceramic capacitor (MLCC). The method prints inner electrodes on full area together with protective layers. The MLCC uses the thickness of thinned dielectric ceramic layers and the stacking of nickel inner-electrode layers. High capacitance is achieved at ends and sides with high electrode-to-ceramic ratios. Thus, the present invention uses a coating technology of ultra-low-temperature electrochemical deposition to fabricate low internal-stress MLCC terminal electrodes together with insulating protective layers for improving MLCC yield while cost reduced.

In a terminal material with a silver coating film including a silver layer on a surface, a terminal and a terminal material having high reliability are easily manufactured with low cost without a heat treatment. A base material formed of copper or a copper alloy; and nickel layer, an intermediate layer, and a silver layer laminated on the base material in this order are included, the nickel layer has a thickness of 0.05 μm to 5.00 μm and is formed of nickel or a nickel alloy, the intermediate layer has a thickness of 0.02 μm to 1.00 μm and is an alloy layer containing silver (Ag) and a substance X, and the substance X includes one or more kinds of tin, bismuth, gallium, indium, and germanium.

In a terminal material with a silver coating film including a silver layer on a surface, a terminal and a terminal material having high reliability are easily manufactured with low cost without a heat treatment. A base material formed of copper or a copper alloy; and nickel layer, an intermediate layer, and a silver layer laminated on the base material in this order are included, the nickel layer has a thickness of 0.05 μm to 5.00 μm and is formed of nickel or a nickel alloy, the intermediate layer has a thickness of 0.02 μm to 1.00 μm and is an alloy layer containing silver (Ag) and a substance X, and the substance X includes one or more kinds of tin, bismuth, gallium, indium, and germanium.