This disclosure enables high-productivity controlled fabrication of uniform porous semiconductor layers (made of single layer or multi-layer porous semiconductors such as porous silicon, comprising single porosity or multi-porosity layers). Some applications include fabrication of MEMS separation and sacrificial layers for die detachment and MEMS device fabrication, membrane formation and shallow trench isolation (STI) porous silicon (using porous silicon formation with an optimal porosity and its subsequent oxidation). Further, this disclosure is applicable to the general fields of photovoltaics, MEMS, including sensors and actuators, stand-alone, or integrated with integrated semiconductor microelectronics, semiconductor microelectronics chips and optoelectronics.

A solid electrolyte is formed by blending a coating chemical with metal ions and fatty acid. Filling molds and drying the material in the molds forms the solid electrolyte. The solid electrolyte is mounted on an electrode and attached to a handle. The solid electrolyte is moved over a surface of a substrate with the handle. DC current is passed between the electrode and substrate and ions are transferred to the wetted substrate from the solid electrolyte.

Described herein are systems and methods for performing a surface mechanical attrition treatment (SMAT) to the surface of a variety of materials including thin films, nanomaterials, and other delicate and brittle materials. In an aspect, a surface of a material is modified to a modified surface and from an original state to a modified state, wherein the modified state comprises a physical modification, a chemical modification, or a biological modification. In another aspect, a surface mechanical attrition treatment (SMAT) is applied to the modified surface of the material for a defined duration of time, wherein a condition associated with the SMAT is adjusted based on a structural composition of the material. In yet another aspect, a defined strain is imposed on the structural composition of the material based on the SMAT.

This disclosure enables high-productivity fabrication of semiconductor-based separation layers (made of single layer or multi-layer porous semiconductors such as porous silicon, comprising single porosity or multi-porosity layers), optical reflectors (made of multi-layer/multi-porosity porous semiconductors such as porous silicon), formation of porous semiconductor (such as porous silicon) for anti-reflection coatings, passivation layers, and multi-junction, multi-band-gap solar cells (for instance, by forming a variable band gap porous silicon emitter on a crystalline silicon thin film or wafer-based solar cell). Other applications include fabrication of MEMS separation and sacrificial layers for die detachment and MEMS device fabrication, membrane formation and shallow trench isolation (STI) porous silicon (using porous silicon formation with an optimal porosity and its subsequent oxidation). Further the disclosure is applicable to the general fields of Photovoltaics, MEMS, including sensors and actuators, stand-alone, or integrated with integrated semiconductor microelectronics, semiconductor microelectronics chips and optoelectronics.

Disclosed are polymers, methods of making polymers, and compositions, focused on cross-linking heterocycles comprising a moiety of Formula I with thiols and thiolates.

Disclosed are polymers, methods of making polymers, and compositions, focused on cross-linking heterocycles comprising a moiety of Formula I with thiols and thiolates.

Provided is a masking sheet for anodizing, the masking sheet comprising a substrate having first and second faces, and a PSA layer placed on the first face side of the substrate. Here, the substrate is a non-metal substrate. The elastic modulus Et of the masking sheet and the thickness Hs of the substrate satisfy the next relation 0.7 N/mm<Et.Math.Hs.sup.3.

This disclosure enables high-productivity fabrication of porous semiconductor layers (made of single layer or multi-layer porous semiconductors such as porous silicon, comprising single porosity or multi-porosity layers). Some applications include fabrication of MEMS separation and sacrificial layers for die detachment and MEMS device fabrication, membrane formation and shallow trench isolation (STI) porous silicon (using porous silicon formation with an optimal porosity and its subsequent oxidation). Further, this disclosure is applicable to the general fields of photovoltaics, MEMS, including sensors and actuators, stand-alone, or integrated with integrated semiconductor microelectronics, semiconductor microelectronics chips and optoelectronics.

Embodiments herein provide a membrane that is a product of a phenol crosslinked with one or more compounds containing an allyl group. The phenol may be electropolymerized with the allyl-containing compounds to form the crosslinked polymer. Suitable allyl-containing compounds include allylphenol, allylalcohol, allylamine, and allylcarbamide. A membrane may have one type of allyl-containing compound, or, alternatively, two or more types of compounds. As used in an analyte sensing device, a membrane formed from a crosslinked phenol may provide improved interference exclusion, peroxide response, stability, and/or solvent resistance.

A method of forming a non-metallic coating on a metallic substrate involves the steps of positioning the metallic substrate in an electrolysis chamber and applying a sequence of voltage pulses of alternating polarity to electrically bias the substrate with respect to an electrode. Positive voltage pulses anodically bias the substrate with respect to the electrode and negative voltage pulses cathodically bias the substrate with respect to the electrode. The amplitude of the positive voltage pulses is potentiostatically controlled, whereas the amplitude of the negative voltage pulses is galvanostatically controlled.