A process of producing a component includes providing a substrate having an electrically conductive surface in the form of an electrically conductive layer; subdividing the layer with the aid of a scratching process into a first electrically autonomous region and a second electrically autonomous region, wherein an electrically insulating region is formed in the electrically conductive layer to electrically separate the electrically autonomous regions; forming an electrical potential difference between the first electrically autonomous region and the second electrically autonomous region; and applying an electrically charged substance or an electrically charged substance mixture onto the first electrically autonomous region and/or the second electrically autonomous region, wherein the electrically autonomous region and/or an amount of the applied electrically charged substance or of the electrically charged substance mixture are adjusted by the electrical potential difference.

A method for increasing a detection distance of a surface of an object illuminated by near-IR electromagnetic radiation, including: (a) directing near-IR electromagnetic radiation from a near-IR electromagnetic radiation source towards an object at least partially coated with a near-IR reflective coating that increases a near-IR electromagnetic radiation detection distance by at least 15% as measured at a wavelength in a near-IR range as compared to the same object coated with a color matched coating which absorbs more of the same near-IR radiation, where the color matched coating has a ?E color matched value of 1.5 or less when compared to the near-IR reflective coating; and (b) detecting reflected near-IR electromagnetic radiation reflected from the near-IR reflective coating. A system for detecting proximity of vehicles is also disclosed.

A method for increasing a detection distance of a surface of an object illuminated by near-IR electromagnetic radiation, including: (a) directing near-IR electromagnetic radiation from a near-IR electromagnetic radiation source towards an object at least partially coated with a near-IR reflective coating that increases a near-IR electromagnetic radiation detection distance by at least 15% as measured at a wavelength in a near-IR range as compared to the same object coated with a color matched coating which absorbs more of the same near-IR radiation, where the color matched coating has a ?E color matched value of 1.5 or less when compared to the near-IR reflective coating; and (b) detecting reflected near-IR electromagnetic radiation reflected from the near-IR reflective coating. A system for detecting proximity of vehicles is also disclosed.

A general method of manufacturing high strength ultrafine grained nanostructured carbon and carbide materials that combines densification of nanoparticles with heat treatments or other means of supplying energy to cause fusion of structures that interlink and weld the nanoparticles together. Coatings films, nanopaper, nanopaper laminates, fibers, and extended objects can be manufactured by applying the disclosed methods. The nanomaterials are useful for additive manufacturing of rapid prototyped objects. A variety of nanoparticle starting materials are divulged including but not limited to double walled carbon nanotubes, fluorinated graphene nanosheets, silicon nanowires, and boron nanoplatelets. Articles can be manufactured with spark plasma synthesis, capacitive discharge sintering, hot press apparatus and green bodies can be processed in furnaces. The nanomaterials and ultra high strength articles manufactured from them will have applications including laparoscopic instruments, structural composites, heat sinks, EMI shielding, ballistic protection and aerospace components.

A general method of manufacturing high strength ultrafine grained nanostructured carbon and carbide materials that combines densification of nanoparticles with heat treatments or other means of supplying energy to cause fusion of structures that interlink and weld the nanoparticles together. Coatings films, nanopaper, nanopaper laminates, fibers, and extended objects can be manufactured by applying the disclosed methods. The nanomaterials are useful for additive manufacturing of rapid prototyped objects. A variety of nanoparticle starting materials are divulged including but not limited to double walled carbon nanotubes, fluorinated graphene nanosheets, silicon nanowires, and boron nanoplatelets. Articles can be manufactured with spark plasma synthesis, capacitive discharge sintering, hot press apparatus and green bodies can be processed in furnaces. The nanomaterials and ultra high strength articles manufactured from them will have applications including laparoscopic instruments, structural composites, heat sinks, EMI shielding, ballistic protection and aerospace components.

A process of producing a component includes providing a substrate having an electrically conductive surface in the form of an electrically conductive layer; subdividing the layer with the aid of a scratching process into a first electrically autonomous region and a second electrically autonomous region, wherein an electrically insulating region is formed in the electrically conductive layer to electrically separate the electrically autonomous regions; forming an electrical potential difference between the first electrically autonomous region and the second electrically autonomous region; and applying an electrically charged substance or an electrically charged substance mixture onto the first electrically autonomous region and/or the second electrically autonomous region, wherein the electrically autonomous region and/or an amount of the applied electrically charged substance or of the electrically charged substance mixture are adjusted by the electrical potential difference.

A process of producing a component includes providing a substrate having an electrically conductive surface in the form of an electrically conductive layer; subdividing the layer with the aid of a scratching process into a first electrically autonomous region and a second electrically autonomous region, wherein an electrically insulating region is formed in the electrically conductive layer to electrically separate the electrically autonomous regions; forming an electrical potential difference between the first electrically autonomous region and the second electrically autonomous region; and applying an electrically charged substance or an electrically charged substance mixture onto the first electrically autonomous region and/or the second electrically autonomous region, wherein the electrically autonomous region and/or an amount of the applied electrically charged substance or of the electrically charged substance mixture are adjusted by the electrical potential difference.

Provided is a method of manufacturing a semiconductor device according to the present invention, a ring-shaped electrode plate 18 with an opening having a diameter smaller than a diameter of a semiconductor wafer W is disposed between a first electrode plate 14 and a second electrode plate 16, the semiconductor wafer W is arranged between the ring-shaped electrode plate 18 and the second electrode plate 16, and a glass film is formed on a glass film forming scheduled surface in a state where a potential lower than a potential V2 of the second electrode plate 16 is applied to the ring-shaped electrode plate 18. According to the method of manufacturing a semiconductor device of the present invention, even when the glass film forming step is performed using the semiconductor wafer where the base insulating film is formed on the glass film forming scheduled surface as the semiconductor wafer, lowering of deposition efficiency of fine glass particles on the outer peripheral portion of the semiconductor wafer can be suppressed and hence, highly reliable semiconductor devices can be manufactured with high productivity.

Provided is a method of manufacturing a semiconductor device according to the present invention, a ring-shaped electrode plate 18 with an opening having a diameter smaller than a diameter of a semiconductor wafer W is disposed between a first electrode plate 14 and a second electrode plate 16, the semiconductor wafer W is arranged between the ring-shaped electrode plate 18 and the second electrode plate 16, and a glass film is formed on a glass film forming scheduled surface in a state where a potential lower than a potential V2 of the second electrode plate 16 is applied to the ring-shaped electrode plate 18. According to the method of manufacturing a semiconductor device of the present invention, even when the glass film forming step is performed using the semiconductor wafer where the base insulating film is formed on the glass film forming scheduled surface as the semiconductor wafer, lowering of deposition efficiency of fine glass particles on the outer peripheral portion of the semiconductor wafer can be suppressed and hence, highly reliable semiconductor devices can be manufactured with high productivity.

A method for increasing a detection distance of a surface of an object illuminated by near-IR electromagnetic radiation, including: (a) directing near-IR electromagnetic radiation from a near-IR electromagnetic radiation source towards an object at least partially coated with a near-IR reflective coating that increases a near-IR electromagnetic radiation detection distance by at least 15% as measured at a wavelength in a near-IR range as compared to the same object coated with a color matched coating which absorbs more of the same near-IR radiation, where the color matched coating has a ?E color matched value of 1.5 or less when compared to the near-IR reflective coating; and (b) detecting reflected near-IR electromagnetic radiation reflected from the near-IR reflective coating. A system for detecting proximity of vehicles is also disclosed.