The purpose of the present invention is to provide a filling plating system and a filling plating method capable of filling plating sufficiently even if the plating is interrupted between electrolytic plating cells. A filling plating system for forming filling plating in a via hole and/or a through hole of a work to be plated, comprising: a plurality of electrolytic plating cells; and an additive adhesion region arranged between each of the plurality of electrolytic plating cells, wherein solution containing one or more kinds of additive selected from at least a leveler comprising nitrogen-containing organic compound, a brightener comprising sulfur-containing organic compound, and a carrier comprising polyether compound, is directly adhered to the work to be plated at the additive adhesion region.

The purpose of the present invention is to provide a filling plating system and a filling plating method capable of filling plating sufficiently even if the plating is interrupted between electrolytic plating cells. A filling plating system for forming filling plating in a via hole and/or a through hole of a work to be plated, comprising: a plurality of electrolytic plating cells; and an additive adhesion region arranged between each of the plurality of electrolytic plating cells, wherein solution containing one or more kinds of additive selected from at least a leveler comprising nitrogen-containing organic compound, a brightener comprising sulfur-containing organic compound, and a carrier comprising polyether compound, is directly adhered to the work to be plated at the additive adhesion region.

In one example, an electroplating apparatus is provided for electroplating a wafer. The electroplating apparatus comprises a wafer holder for holding a wafer during an electroplating operation and a plating cell configured to contain an electrolyte during the electroplating operation. An anode chamber is disposed within the plating cell, and a charge plate is disposed within the anode chamber. An anode is positioned above the charge plate within the anode chamber. In some examples, the anode chamber is a membrane-less anode chamber.

A method and system for improving uniformity of plating film on the wafer are provided. The method includes: providing a plating device; providing a wafer, the plating device being configured to coat the wafer; monitoring currents at different areas of a surface of the wafer in a plating process; when a difference between the currents at the different areas of the surface of the wafer is greater than a preset difference, inspecting the plating device; and when an attachment is present on the plating device, cleaning the plating device.

In one example, an electroplating system comprises a first bath reservoir, a second bath reservoir, a clamp, a first anode in the first bath reservoir, a second anode in the second bath reservoir, and a direct current power supply. The first bath reservoir contains a first electrolyte solution that includes an alkaline copper-complexed solution. The second bath reservoir contains a second electrolyte solution that includes an acidic copper plating solution. The direct current power supply generates a first direct current between the clamp and the first anode to electroplate a first copper layer on the cobalt layer of the wafer submerged in the first electrolyte solution. The direct current power supply then generates a second direct current between the clamp and the second anode to electroplate a second copper layer on the first copper layer of the wafer submerged in the second electrolyte solution.

In one example, an electroplating system comprises a first bath reservoir, a second bath reservoir, a clamp, a first anode in the first bath reservoir, a second anode in the second bath reservoir, and a direct current power supply. The first bath reservoir contains a first electrolyte solution that includes an alkaline copper-complexed solution. The second bath reservoir contains a second electrolyte solution that includes an acidic copper plating solution. The direct current power supply generates a first direct current between the clamp and the first anode to electroplate a first copper layer on the cobalt layer of the wafer submerged in the first electrolyte solution. The direct current power supply then generates a second direct current between the clamp and the second anode to electroplate a second copper layer on the first copper layer of the wafer submerged in the second electrolyte solution.

There is provided a substrate holder. The substrate holder comprises a contact assembly; a first plate configured to hold a substrate between the contact assembly and the first plate; at least one first pin fixed to the contact assembly, extended toward a first plate side on outside of the substrate, and provided with a locked portion; a locking member placed on a side opposite to the contact assembly relative to the first plate and configured to be displaceable between a locked state and an unlocked state with respect to the locked portion of the first pin; and at least one first biasing member placed between the locking member and the first plate along an outer circumferential part of the substrate such as to separate the locking member and the first plate from each other and compressed between the locking member and the first plate in the locked state to bias the first plate toward the contact assembly.

Electroplating systems may include an electroplating chamber. The systems may also include a replenish assembly fluidly coupled with the electroplating chamber. The replenish assembly may include a first compartment housing anode material. The first compartment may include a first compartment section in which the anode material is housed and a second compartment section separated from the first compartment section by a divider. The replenish assembly may include a second compartment fluidly coupled with the electroplating chamber and electrically coupled with the first compartment. The replenish assembly may also include a third compartment electrically coupled with the second compartment, the third compartment including an inert cathode.

An electroplating apparatus for electroplating metal on a substrate includes a plating chamber configured to contain an electrolyte, a substrate holder configured to hold and rotate the substrate during electroplating, an anode, and an azimuthally asymmetric auxiliary electrode configured to be biased both anodically and cathodically during electroplating. The azimuthally asymmetric auxiliary electrode (which may be, for example, C-shaped), can be used for controlling azimuthal uniformity of metal electrodeposition by donating and diverting ionic current at a selected azimuthal position. In another aspect, an electroplating apparatus for electroplating metal includes a plating chamber configured to contain an electrolyte, a substrate holder configured to hold and rotate the substrate during electroplating, an anode, a shield configured to shield current at the periphery of the substrate; and an azimuthally asymmetric auxiliary anode configured to donate current to the shielded periphery of the substrate at a selected azimuthal position on the substrate.

Methods and apparatus for producing helix windings used for a transformer are provided. For example, apparatus comprise an electrically conductive mandrel comprising an elongated body, a head comprising an eyelet detail, and a winding structure disposed along the elongated body.