A method of cleaning a conducting film containing tin oxide from an insulating surface of an item for use in electroplating applications, comprises the steps of immersing the item in a cleaning fluid and irradiating the immersed item with light of wavelength in the range 100 nm-450 nm.

A method of cleaning a conducting film containing tin oxide from an insulating surface of an item for use in electroplating applications, comprises the steps of immersing the item in a cleaning fluid and irradiating the immersed item with light of wavelength in the range 100 nm-450 nm.

Provided is a substrate holding device that inhibits drop in holding accuracy of a substrate. A Bernoulli chucking pad suctions and holds a front surface or a back surface of a substrate S. A position determiner 54 is capable of pushing the substrate S in contact with a side surface 82 of the substrate S, and positioning the suctioned substrate S. A pin 66 enables the position determiner 54 to come in contact with the side surface 82 of the substrate S. The pin 66 brings the position determiner 54 into contact with the side surface 82 of the substrate S, and the position determiner 54 thereby positions the substrate S.

A wafer plating fixture for use in simultaneously electroplating a two substrates. The wafer plating fixture including: an electrically conductive carrier bus; a plurality of contact clips electrically coupled to the carrier bus and configured to hold the two substrates in place and electrically couple the two substrates to the carrier bus; and a non-conductive substrate backer to separate the two substrates coupled to the carrier bus. A method of electroplating a plurality of substrates. The method including: mounting two substrates to be plated onto a wafer plating fixture; mounting the wafer plating fixture on a continuous belt of plating system; dipping the wafer plating fixture with the two substrates held thereon into an electroplating bath; and applying a voltage to the two substrates via the wafer plating fixture.

Methods for fabricating dendritic structures and tags include introducing an electrolyte material onto a substrate, into a substrate, or both onto and into a substrate, and applying an electrical potential to at least one pair of electrodes positioned on the substrate to form one or more dendritic structures on the substrate.

An electrochemical plating (ECP) system is provided. The ECP system includes an ECP cell comprising a plating solution for an ECP process, a sensor configured to in situ measure an interface resistance between a plated metal and an electrolyte in the plating solution as the ECP process continues, a plating solution supply system in fluid communication with the ECP cell and configured to supply the plating solution to the ECP cell, and a control system operably coupled to the ECP cell, the sensor and the plating solution supply system. The control system is configured to compare the interface resistance with a threshold resistance and to adjust a composition of the plating solution in response to the interface resistance being below the threshold resistance.

An electrochemical plating (ECP) system is provided. The ECP system includes an ECP cell comprising a plating solution for an ECP process, a sensor configured to in situ measure an interface resistance between a plated metal and an electrolyte in the plating solution as the ECP process continues, a plating solution supply system in fluid communication with the ECP cell and configured to supply the plating solution to the ECP cell, and a control system operably coupled to the ECP cell, the sensor and the plating solution supply system. The control system is configured to compare the interface resistance with a threshold resistance and to adjust a composition of the plating solution in response to the interface resistance being below the threshold resistance.

There is provided a method of plating comprising: a process of bringing a sealing portion of a seal provided to prevent a contact of a substrate holder that holds a substrate from coming into contact with a plating solution, into contact with pure water; and a process of detecting a leak of the seal, based on presence or absence of a short circuit of a leak detection electrode placed inside of the substrate holder after the sealing portion is brought into contact with the pure water and before the substrate is brought into contact with a chemical solution.

A plating system is provided. The plating system includes an electroplating chamber defining a plating region within which a wafer is plated. The electroplating chamber includes an inlet configured to introduce plating solution into the plating region of the electroplating chamber. The electroplating chamber includes an outlet configured to remove the plating solution from the plating region of the electroplating chamber. The plating system includes a barrier configured to inhibit removal of the plating solution from the plating region.

A plating apparatus (10) is disclosed including a plating tank (9), cathodes (1a to 1f), a holding mechanism (2), at least one anode (3), and a rotation mechanism (4). The plating tank (9) contains an annularly or helically wound substrate (90) together with a plating solution. The cathodes (1a to 1f) are placed inside the plating tank (9). The holding mechanism (2) holds the cathodes (1a to 1f) at positions electrically connected to the outer periphery of the substrate (90) and holds the substrate (90) via the cathodes (1a to 1f). The anode (3) is placed at least on the inner periphery side of the substrate (90) held by the holding mechanism (2). The rotation mechanism (4) rotates at least either the substrate (90) and cathodes (1a to 1f) held by the holding mechanism (2) or the anode (3), or both, around the axis of the wound substrate (90).