A film deposition device (1A) of a metal film includes: a solid electrolyte membrane (13) that allows metal ions to be contained; a positive electrode (11) made of a porous body; a power supply part (14) that applies a voltage between the positive electrode and a base material; and a contact pressurization part (20) that comes into contact with the positive electrode (11) and uniformly pressurizes a film deposition region of a surface of the base material by the solid electrolyte membrane (13) via the positive electrode (11). The positive electrode (11) made of the porous body is capable of transmitting a solution containing the metal ions such that the metal ions are supplied to the solid electrolyte membrane. The power supply part (14) applies a voltage between the positive electrode and the base material so that the metal film made of the metal is deposited.

An electrochemical plating apparatus for depositing a conductive material on a wafer includes a cell chamber. The plating solution is provided from a bottom of the cell chamber into the cell chamber. A plurality of openings passes through a sidewall of the cell chamber. A flow regulator is arranged with each of the plurality of openings configured to regulate an overflow amount of the plating solution flowing out through the each of the plurality of openings. The electrochemical plating apparatus further comprises a controller to control the flow regulator such that overflow amounts of the plating solution flowing out through the plurality of openings are substantially equal to each other.

An electrochemical plating apparatus for depositing a conductive material on a wafer includes a cell chamber. The plating solution is provided from a bottom of the cell chamber into the cell chamber. A plurality of openings passes through a sidewall of the cell chamber. A flow regulator is arranged with each of the plurality of openings configured to regulate an overflow amount of the plating solution flowing out through the each of the plurality of openings. The electrochemical plating apparatus further comprises a controller to control the flow regulator such that overflow amounts of the plating solution flowing out through the plurality of openings are substantially equal to each other.

Anodic oxide coatings that provide corrosion resistance to parts having protruding features, such as edges, corners and convex-shaped features, are described. According to some embodiments, the anodic oxide coatings include an inner porous layer and an outer porous layer. The inner layer is adjacent to an underlying metal substrate and is formed under compressive stress anodizing conditions that allow the inner porous layer to be formed generally crack-free. In this way, the inner porous layer acts as a barrier that prevents water or other corrosion-inducing agents from reaching the underlying metal substrate. The outer porous layer can be thicker and harder than the inner porous layer, thereby increasing the overall hardness of the anodic oxide coating.

Anodic oxide coatings that provide corrosion resistance to parts having protruding features, such as edges, corners and convex-shaped features, are described. According to some embodiments, the anodic oxide coatings include an inner porous layer and an outer porous layer. The inner layer is adjacent to an underlying metal substrate and is formed under compressive stress anodizing conditions that allow the inner porous layer to be formed generally crack-free. In this way, the inner porous layer acts as a barrier that prevents water or other corrosion-inducing agents from reaching the underlying metal substrate. The outer porous layer can be thicker and harder than the inner porous layer, thereby increasing the overall hardness of the anodic oxide coating.

An electrochemical plating apparatus for depositing a conductive material on a wafer includes a cell chamber. The plating solution is provided from a bottom of the cell chamber into the cell chamber. A plurality of openings passes through a sidewall of the cell chamber. A flow regulator is arranged with each of the plurality of openings configured to regulate an overflow amount of the plating solution flowing out through the each of the plurality of openings. The electrochemical plating apparatus further comprises a controller to control the flow regulator such that overflow amounts of the plating solution flowing out through the plurality of openings are substantially equal to each other.

An electrochemical plating apparatus for depositing a conductive material on a wafer includes a cell chamber. The plating solution is provided from a bottom of the cell chamber into the cell chamber. A plurality of openings passes through a sidewall of the cell chamber. A flow regulator is arranged with each of the plurality of openings configured to regulate an overflow amount of the plating solution flowing out through the each of the plurality of openings. The electrochemical plating apparatus further comprises a controller to control the flow regulator such that overflow amounts of the plating solution flowing out through the plurality of openings are substantially equal to each other.

To stably convey a substrate (workpiece) while suppressing the workpiece from bending. A treatment device is provided. This treatment device includes: a conveying part that conveys a workpiece in a state where a flat surface of the workpiece is inclined around a conveying directional axis relative to a horizontal plane; and a treatment part in which at least one of polishing and cleaning is performed on the flat surface of the workpiece, wherein the conveying part has a drive part configured to be brought into physical contact with an end part of the workpiece and apply force in a conveying direction to the workpiece, a first Bernoulli chuck arranged to face the flat surface of the workpiece, and a second Bernoulli chuck arranged to face an end face of an opposite end part to the end part of the workpiece.

To stably convey a substrate (workpiece) while suppressing the workpiece from bending. A treatment device is provided. This treatment device includes: a conveying part that conveys a workpiece in a state where a flat surface of the workpiece is inclined around a conveying directional axis relative to a horizontal plane; and a treatment part in which at least one of polishing and cleaning is performed on the flat surface of the workpiece, wherein the conveying part has a drive part configured to be brought into physical contact with an end part of the workpiece and apply force in a conveying direction to the workpiece, a first Bernoulli chuck arranged to face the flat surface of the workpiece, and a second Bernoulli chuck arranged to face an end face of an opposite end part to the end part of the workpiece.

The present invention relates to a substrate processing apparatus for processing a substrate with a processing liquid. The substrate processing apparatus according to one embodiment includes: a support portion having a placement surface on which a substrate is placed in a horizontal posture; a processing tank configured to supply a processing liquid to the substrate and process the substrate; an elevating portion configured to raise and lower the support portion in order to lower the substrate into the processing tank and raise the substrate from the processing tank; a gripping portion configured to grip a periphery of the substrate supported by the support portion above the processing tank, and receive the substrate from the support portion; and a first nozzle configured to emit a gas onto the substrate, gripped by the gripping portion, to dry the substrate.