C25F1/00

ELECTROCHEMICAL CLEANING OF TEST PROBES
20200292577 · 2020-09-17 ·

A method of treating a material on a probe is provided. The method includes the steps of immersing a probe tip into a first fluid, wherein the probe tip includes one or more oxidized metallic fragments on a surface of the probe tip; polarizing the probe tip, through a counter electrode, with a negative current to reduce the one or more oxidized metallic fragments to one or more substantially unoxidized metallic fragments; removing the probe tip from the first fluid; immersing the probe in a second fluid, wherein the second fluid is a complexer for the one or more substantially unoxidized metallic fragments; and polarizing the probe tip with a positive current, through the counter electrode, wherein the positive current oxidizes the one or more substantially unoxidized metallic fragments.

Surface treatment method of aluminum for bonding different materials

Disclosed is a method of fabricating an aluminum alloy member for bonding different materials. The method may include etching the aluminum alloy member with one or more etching solutions, and forming one or more undercuts on a surface of the aluminum alloy member.

Method of removing particles from an electronic component
10731270 · 2020-08-04 · ·

Particles are removed from electronic components, such as components of data storage devices by use of an electrochemical process. An electronic component is immersed in an electrochemical bath, and a voltage is applied across the +ve electrode and ve electrode in an amount sufficient to remove charged particles present on a surface of the electronic component.

Method of removing particles from an electronic component
10731270 · 2020-08-04 · ·

Particles are removed from electronic components, such as components of data storage devices by use of an electrochemical process. An electronic component is immersed in an electrochemical bath, and a voltage is applied across the +ve electrode and ve electrode in an amount sufficient to remove charged particles present on a surface of the electronic component.

Plated material and connecting terminal using same

Provided are a plated material having excellent abrasion resistance, electrical conductivity, sliding performance, and low friction, in which a plating layer does not undergo embrittlement properly; and a method for producing the plated material. The method includes a first step of at least partially removing a reflow tin plating layer from a metallic base material having the reflow layer on at least a part thereof and a reactive layer provided at the interface between the reflow layer and the base material; a second step of at least partially subjecting a region in which the reflow tin plating layer has been removed to a nickel plating treatment; a third step of at least partially subjecting the nickel plating layer to a silver strike plating treatment; and a fourth step of at least partially subjecting a region of the silver strike plating to a silver plating treatment.

Plated material and connecting terminal using same

Provided are a plated material having excellent abrasion resistance, electrical conductivity, sliding performance, and low friction, in which a plating layer does not undergo embrittlement properly; and a method for producing the plated material. The method includes a first step of at least partially removing a reflow tin plating layer from a metallic base material having the reflow layer on at least a part thereof and a reactive layer provided at the interface between the reflow layer and the base material; a second step of at least partially subjecting a region in which the reflow tin plating layer has been removed to a nickel plating treatment; a third step of at least partially subjecting the nickel plating layer to a silver strike plating treatment; and a fourth step of at least partially subjecting a region of the silver strike plating to a silver plating treatment.

CLEANING ELECTROPLATING SUBSTRATE HOLDERS USING REVERSE CURRENT DEPLATING

Provided are cleaning methods and systems to remove unintended metallic deposits from electroplating apparatuses using reverse current deplating techniques. Such cleaning involves positioning a cleaning (deplating) disk in an electroplating cup similar to a regular processed substrate. The front surface of the cleaning disk includes a corrosion resistant conductive material to form electrical connections to deposits on the cup's surfaces. The disk is sealed in the cup and submerged into a plating solution. A reverse current is then applied to the front conductive surface of the disk to initiate deplating of the deposits. Sealing compression in the cup may change during cleaning to cause different deformation of the lip seal and to form new electrical connections to the deposits. The proposed cleaning may be applied to remove deposits formed during electroplating of alloys, in particular, tin-silver alloys widely used for semiconductor and wafer level packaging.

CLEANING ELECTROPLATING SUBSTRATE HOLDERS USING REVERSE CURRENT DEPLATING

Provided are cleaning methods and systems to remove unintended metallic deposits from electroplating apparatuses using reverse current deplating techniques. Such cleaning involves positioning a cleaning (deplating) disk in an electroplating cup similar to a regular processed substrate. The front surface of the cleaning disk includes a corrosion resistant conductive material to form electrical connections to deposits on the cup's surfaces. The disk is sealed in the cup and submerged into a plating solution. A reverse current is then applied to the front conductive surface of the disk to initiate deplating of the deposits. Sealing compression in the cup may change during cleaning to cause different deformation of the lip seal and to form new electrical connections to the deposits. The proposed cleaning may be applied to remove deposits formed during electroplating of alloys, in particular, tin-silver alloys widely used for semiconductor and wafer level packaging.

Leached polycrystalline diamond elements

A method of processing a polycrystalline diamond material includes exposing at least a portion of a polycrystalline diamond material to a processing solution, the polycrystalline diamond material including a metallic material disposed in interstitial spaces defined within the polycrystalline diamond material. The method includes exposing an electrode to the processing solution, applying a positive charge to the polycrystalline diamond material, and applying a negative charge to the electrode. An assembly for processing a polycrystalline diamond body includes a polycrystalline diamond body and an electrode that are in electrical communication with a volume of processing solution, and a power source configured to apply a positive charge to the polycrystalline diamond body and a negative charge to the electrode.

Leached polycrystalline diamond elements

A method of processing a polycrystalline diamond material includes exposing at least a portion of a polycrystalline diamond material to a processing solution, the polycrystalline diamond material including a metallic material disposed in interstitial spaces defined within the polycrystalline diamond material. The method includes exposing an electrode to the processing solution, applying a positive charge to the polycrystalline diamond material, and applying a negative charge to the electrode. An assembly for processing a polycrystalline diamond body includes a polycrystalline diamond body and an electrode that are in electrical communication with a volume of processing solution, and a power source configured to apply a positive charge to the polycrystalline diamond body and a negative charge to the electrode.