Patent classifications
C25F3/00
Apparatus and method for making extrusion dies
An apparatus and method to machine cavities in die blanks having little to no taper. The apparatus includes an electrode tool (200) including intersecting walls coated with electrically insulating coating (258), an erosion face (204) comprising a cross section of the walls exposed through the electrically insulating coating, and a channel formed by the walls to supply electrolyte to the erosion face, the channels defined by interior surfaces of the walls and having an opening formed by edges of the erosion face. The method includes pulsed electrochemical machining a work piece with the electrode tool.
Apparatus and method for making extrusion dies
An apparatus and method to machine cavities in die blanks having little to no taper. The apparatus includes an electrode tool (200) including intersecting walls coated with electrically insulating coating (258), an erosion face (204) comprising a cross section of the walls exposed through the electrically insulating coating, and a channel formed by the walls to supply electrolyte to the erosion face, the channels defined by interior surfaces of the walls and having an opening formed by edges of the erosion face. The method includes pulsed electrochemical machining a work piece with the electrode tool.
GRAPHENE ELECTROCHEMICAL TRANSFER METHOD ASSISTED BY MULTIPLE SUPPORTING FILMS
Disclosed is a graphene electrochemical transfer method assisted by multiple supporting films, comprising: (1) growing graphene on a substrate, and then spin-coating a thin layer of photoresist on a surface of the graphene as a first film; (2) spin-coating n layers of thick, tough, and selectively dissolvable polymer films on the surface of the first film as an top film; (3) dissociating the multi-layer composite film and the graphene from the surface of the substrate by an electrochemical process, and dissolving the thick polymer films which is the top film with a first solvent; (4) after cleaning, transferring the thin first film and the graphene to a target substrate, and finally dissolving the thin first film away with a second solvent to complete the transfer process. This transfer process is fast, stable, and capable of transferring a large-size graphene, which may promote the large-scale application of graphene.
METHOD FOR RECOVERY OF Nd2Fe14B GRAINS FROM BULK SINTERED Nd-Fe-B MAGNETS AND/OR MAGNET SCRAPS BY ELECTROCHEMICAL ETCHING
The invention relates to a method for recovery of Nd.sub.2Fe.sub.14B grains from bulk sintered NdFeB magnets and/or magnet scraps. In this method the NdFeB magnets (1) and/or magnet scraps are anodically oxidized using a non-aqueous liquid electrolyte (5), said anodic oxidation releasing the Nd.sub.2Fe.sub.14B grains (6) in said NdFeB magnets (1) and/or magnet scraps. The released Nd.sub.2Fe.sub.14B grains (6) are collected during and/or after said anodic oxidation. The proposed method allows a more environmental friendly and cost-effective way for recycling EOL NdFeB magnets/NdFeB magnet scraps.
Method of manufacturing emitter
Disclosed is a method of manufacturing an emitter in which the tip of the emitter can be formed into a desired shape even when various materials are used for the emitter. The method includes performing an electrolytic polishing process of polishing a front end of a conductive emitter material so that a diameter of the front end is gradually reduced toward a tip; performing a first etching process by irradiating a processing portion of the emitter material processed by the electrolytic polishing process with a charged particle beam; performing a sputtering process by irradiating the pointed portion formed by the first etching process with a focused ion beam; and performing a secondary etching process of further sharpening the tip by an electric field induced gas etching processing while observing a crystal structure of the tip of the pointed portion processed by the sputtering process using a field ion microscope.
Method of manufacturing emitter
Disclosed is a method of manufacturing an emitter in which the tip of the emitter can be formed into a desired shape even when various materials are used for the emitter. The method includes performing an electrolytic polishing process of polishing a front end of a conductive emitter material so that a diameter of the front end is gradually reduced toward a tip; performing a first etching process by irradiating a processing portion of the emitter material processed by the electrolytic polishing process with a charged particle beam; performing a sputtering process by irradiating the pointed portion formed by the first etching process with a focused ion beam; and performing a secondary etching process of further sharpening the tip by an electric field induced gas etching processing while observing a crystal structure of the tip of the pointed portion processed by the sputtering process using a field ion microscope.
Method for DNA defined etching of a graphene nanostructure
Disclosed is a method for etching graphene using a DNA sample of a predetermined DNA shape. The DNA sample is preferably placed onto a reaction area of a piece of highly oriented pyrolytic graphite (HOPG), and both the DNA sample and HOPG are then preferably placed into a humidity-controlled chamber. Humidity is preferably applied to the HOPG to produce a film of water across the surface of the DNA sample. Electrical voltage is also applied to the HOPG to create potential energy for the etching process. After the etching is completed, the reaction area is typically rinsed with deionized water.
Method for DNA defined etching of a graphene nanostructure
Disclosed is a method for etching graphene using a DNA sample of a predetermined DNA shape. The DNA sample is preferably placed onto a reaction area of a piece of highly oriented pyrolytic graphite (HOPG), and both the DNA sample and HOPG are then preferably placed into a humidity-controlled chamber. Humidity is preferably applied to the HOPG to produce a film of water across the surface of the DNA sample. Electrical voltage is also applied to the HOPG to create potential energy for the etching process. After the etching is completed, the reaction area is typically rinsed with deionized water.
Forming method and formed article
A forming method includes: forming a formed article including a first part and a second part using a first metal for the first part and a second metal for the second part; and removing the second part from the formed article by immersing the formed article in an electrolyte solution and causing a current to flow in the second part.
Forming method and formed article
A forming method includes: forming a formed article including a first part and a second part using a first metal for the first part and a second metal for the second part; and removing the second part from the formed article by immersing the formed article in an electrolyte solution and causing a current to flow in the second part.