A process for making a cement, the cement containing a naturally occurring silicate bound in an organic binder, and a metal oxide. An example process includes dissolving the organic binder at least in part, using an effective amount of a chemical activator. An example process also includes providing the silicate to react with other components of the cement. An example process also includes providing the silicate to participate in crystal growth. An example process also includes providing the silicate so that the cement is a structural load bearing cement.

A method for fabricating a pellicle for EUV lithography processes includes placing a hard mask in contact with a surface of a substrate. In some embodiments, the hard mask is configured to pattern the surface of the substrate to include a first region and a second region surrounding the first region. By way of example, while the mask in positioned in contact with the substrate, an etch process of the substrate is performed to etch the first and second regions into the substrate. Thereafter, an excess substrate region is removed so as to separate the etched first region from the excess substrate region. In various embodiments, the etched and separated first region serves as a pellicle for an extreme ultraviolet (EUV) lithography process.

A method of producing an article is described. The method includes (a) providing a substrate comprising an etchable surface layer; (b) coating the etchable surface layer with a composition comprising a non-volatile, etch-resistant component in a volatile liquid carrier; and (c) drying the composition to remove the liquid carrier, whereupon the non-volatile, etch-resistant component self-assembles to form etch-resistant traces on the etchable surface layer. The liquid carrier is in the form of an emulsion comprising a continuous phase and a second phase in the form of domains dispersed in the continuous phase.

A coated metal component includes an aluminum alloy substrate and a protective aluminum coating on a substrate. An interfacial boundary layer between the coating and substrate enhances coating adhesion. The boundary layer includes isolated regions of copper or tin produced by a double zincating process. The protective aluminum coating exhibits improved adhesion and is formed by electrodeposition in an ionic liquid.

A coated metal component includes an aluminum alloy substrate and a protective aluminum coating on a substrate. An interfacial boundary layer between the coating and substrate enhances coating adhesion. The boundary layer includes isolated regions of copper or tin produced by a double zincating process. The protective aluminum coating exhibits improved adhesion and is formed by electrodeposition in an ionic liquid.

A phosphoric acid aqueous solution in a production tank circulates a circulation system. The circulation system is configured to be switchable between a first state in which the phosphoric acid aqueous solution is circulated through a bypass pipe and a second state in which the phosphoric acid aqueous solution is circulated through a filter. When a silicon containing liquid is supplied to the production tank, the circulation system is switched to the first state. When silicon particles are uniformly dispersed in the phosphoric acid aqueous solution, the circulation system is switched to the second state. Alternatively, a filtration member is provided in the production tank. The silicon containing liquid is stored in the filtration member. The filtration member is dipped in the phosphoric acid aqueous solution stored in the production tank. The silicon containing liquid is permeated through the filtration member, and is mixed with the phosphoric acid aqueous solution.

Disclosed is a method for etching graphene using a DNA sample of a predetermined DNA shape. The DNA sample is preferably placed onto a reaction area of a piece of highly oriented pyrolytic graphite (HOPG), and both the DNA sample and HOPG are then preferably placed into a humidity-controlled chamber. Humidity is preferably applied to the HOPG to produce a film of water across the surface of the DNA sample. Electrical voltage is also applied to the HOPG to create potential energy for the etching process. After the etching is completed, the reaction area is typically rinsed with deionized water.

Disclosed is a method for etching graphene using a DNA sample of a predetermined DNA shape. The DNA sample is preferably placed onto a reaction area of a piece of highly oriented pyrolytic graphite (HOPG), and both the DNA sample and HOPG are then preferably placed into a humidity-controlled chamber. Humidity is preferably applied to the HOPG to produce a film of water across the surface of the DNA sample. Electrical voltage is also applied to the HOPG to create potential energy for the etching process. After the etching is completed, the reaction area is typically rinsed with deionized water.

A method of forming a wiring pattern includes: a) forming a metal underlayer including a first underlying wiring layer which is in contact with an electrode, a second underlying wiring layer which is not in contact with the electrode, and an underlying connection layer which connects the first underlying wiring layer to the second underlying wiring layer; b) forming a metal plating layer on the metal underlayer through electroplating; and c) removing a metal connection portion through etching. The metal connection portion is the underlying connection layer covered with the metal plating layer. The etching includes bringing a solid electrolyte material that contains a solution into which metal of the metal connection portion is dissolved, into contact with the metal connection portion and applying a voltage between the metal connection portion and the solid electrolyte material.

The present inventive concepts provide metal etchant compositions and methods of fabricating a semiconductor device using the same. The metal etchant composition includes an organic peroxide in a range of about 0.1 wt % to about 20 wt %, an organic acid in a range of about 0.1 wt % to about 70 wt %, and an alcohol-based solvent in a range of about 10 wt % to about 99.8 wt %. The metal etchant composition may be used in an anhydrous system.