Disclosed herein is an electrolytic brush assembly comprising a handle assembly; a shroud extending from the handle assembly, the shroud having an aperture at a distal end thereof; a brush connecting assembly for releasably connecting a brush to the handle assembly whereby the brush extends through the aperture of the shroud and a fluid delivery assembly. The handle assembly comprises an adjustment sub-assembly for selectively moving the brush connecting assembly and a brush connected thereto relative to the handle assembly and the aperture of the shroud. The fluid delivery assembly delivers electrolytic fluid to the proximity of the brush, optionally under closed loop control.

A method of manufacturing a semiconductor wafer having a roughened metallization layer surface is described. The method includes immersing the semiconductor wafer in an electrolytic bath. Gas bubbles are generated in the electrolytic bath. A surface of a metallization layer on the semiconductor wafer is electrochemically roughened in the presence of the gas bubbles by applying a reversing voltage between the metallization layer and an electrode of the electrolytic bath.

A technique of removing material from metal parts referred to as OPECM and a corresponding OPECM processing machine are disclosed. A tool electrode is manufactured for removing material from a target workpiece, and the workpiece and tool electrode are fixed into a processing machine that imparts an oscillatory motion path or profile and applies a voltage through a flowing electrolyte solution. The disclosed technique and processing machine removes material from the surface of the target workpiece through proximal surface dissolution as the workpiece and tool electrode are brought within proximity of one another.

A technique of removing material from metal parts referred to as OPECM and a corresponding OPECM processing machine are disclosed. A tool electrode is manufactured for removing material from a target workpiece, and the workpiece and tool electrode are fixed into a processing machine that imparts an oscillatory motion path or profile and applies a voltage through a flowing electrolyte solution. The disclosed technique and processing machine removes material from the surface of the target workpiece through proximal surface dissolution as the workpiece and tool electrode are brought within proximity of one another.

A method of processing a superabrasive element includes providing a superabrasive element including a polycrystalline diamond table that includes a metallic material disposed in interstitial spaces defined within the polycrystalline diamond table. The polycrystalline diamond table includes a superabrasive face and a superabrasive side surface extending around an outer periphery of the superabrasive face. The method also includes leaching the metallic material from at least a volume of the polycrystalline diamond table to produce a leached volume in the polycrystalline diamond table by (1) exposing at least a portion of the polycrystalline diamond table to a processing solution, (2) exposing an electrode to the processing solution, and (3) applying a charge to the electrode such that a voltage is generated between the polycrystalline diamond table and the electrode and the voltage is applied to the processing solution. The method includes the use of an improved processing solution, including an organic acid and a divalent (e.g., Group II) metal salt, to increase the leaching depth.

A method of processing a superabrasive element includes providing a superabrasive element including a polycrystalline diamond table that includes a metallic material disposed in interstitial spaces defined within the polycrystalline diamond table. The polycrystalline diamond table includes a superabrasive face and a superabrasive side surface extending around an outer periphery of the superabrasive face. The method also includes leaching the metallic material from at least a volume of the polycrystalline diamond table to produce a leached volume in the polycrystalline diamond table by (1) exposing at least a portion of the polycrystalline diamond table to a processing solution, (2) exposing an electrode to the processing solution, and (3) applying a charge to the electrode such that a voltage is generated between the polycrystalline diamond table and the electrode and the voltage is applied to the processing solution. The method includes the use of an improved processing solution, including an organic acid and a divalent (e.g., Group II) metal salt, to increase the leaching depth.

An apparatus capable of local polishing and suitable for performing a plasma-electrolytic polishing process on an object is provided. The apparatus capable of local polishing includes a fixing seat, a motion mechanism, and a jet module connected to the motion mechanism and including an electrolyte communication port, a gas communication port, a power connection area, and a jet flow outlet. The jet flow outlet faces the fixing seat and is communicated with the electrolyte communication port and the gas communication port to be suitable for performing the plasma-electrolytic polishing process on the object fixed on the fixing seat. A plasma-electrolytic polishing system including an apparatus capable of local polishing is also provided.

An apparatus capable of local polishing and suitable for performing a plasma-electrolytic polishing process on an object is provided. The apparatus capable of local polishing includes a fixing seat, a motion mechanism, and a jet module connected to the motion mechanism and including an electrolyte communication port, a gas communication port, a power connection area, and a jet flow outlet. The jet flow outlet faces the fixing seat and is communicated with the electrolyte communication port and the gas communication port to be suitable for performing the plasma-electrolytic polishing process on the object fixed on the fixing seat. A plasma-electrolytic polishing system including an apparatus capable of local polishing is also provided.

Compositions and methods for etching a surface of an implantable device are disclosed. The compositions generally include one or more alkali components, such as a metal hydroxide and optionally an amine, one or more chelating agents, and certain dissolved metals, such as component metals of the metal or alloy to be etched and optionally iron. For example, when etching a titanium device, the metals may include titanium (Ti). Alternatively, the composition may be an electrolyte composition useful for electrochemical etching of the implantable device. These compositions and methods may generate nanoscale geometry on the surface of the implantable device to provide implants with accelerate osseointegration and healing after surgery.

The apparatus for making a nanopore in a membrane generally has an electrode configured to connect to one of two opposing surfaces of the membrane; a conductive tip configured to contact a location of the other one of the two opposing surfaces of the membrane; and a voltage source electrically connected between the electrode and the conductive tip and operable to generate an electric potential across the membrane, the electric potential locally removing material of the membrane at the location to make the nanopore.