A method of electropolishing an internal passageway of a component, wherein the passageway has an inlet and an outlet; including: providing an electrode assembly including a flexible electrode, a shuttle and a guide cable extending between the flexible electrode and the shuttle; inserting the shuttle into the inlet; causing fluid to flow through the passageway to transport the shuttle through the passageway from the inlet towards the outlet; pulling the guide cable through the passageway to position the electrode in the passageway adjacent to a region of the passageway to be polished; and electropolishing the passageway using the electrode while moving the electrode within the passageway. Also, an electrode assembly for electropolishing an internal passageway of a component, including: a flexible electrode, a shuttle, and a guide cable extending between the flexible electrode and the shuttle.

A substrate has a front side including an electrical circuit and a rear side including an exposed zone that faces the electrical circuit. In an electrochemical treatment step, an electrical potential is laterally applied at least to the exposed zone of the rear side of the substrate, while the exposed zone is in contact with a chemically reactive substance. The electrical potential causes a lateral flow of electrical current at least in the exposed zone of the substrate. The lateral flow of current and the chemically reactive substance alter the substrate in at least the exposed zone.

A method of processing a polycrystalline diamond body includes positioning an electrode near the polycrystalline diamond body such that a gap is defined between the electrode and the polycrystalline diamond body, the polycrystalline diamond body having a metallic material disposed in interstitial spaces defined within the polycrystalline diamond body. The method includes applying a voltage between the electrode and the polycrystalline diamond body, and passing a processing solution through the gap. The electrode is a cathode and the polycrystalline diamond body is an anode. An assembly for processing a polycrystalline diamond body includes the polycrystalline diamond body, an electrode positioned such that a gap is defined between the electrode and the polycrystalline diamond body, a processing solution passing through the gap such that the processing solution is in electrical communication with each of the polycrystalline diamond body and the electrode, and at least one power source.

An apparatus for etching one side of a semiconductor layer of a workpiece, including at least one etching basin for receiving an electrolyte, a first electrode which is provided for electrically contacting the electrolyte located in the etching basin, a second electrode which is provided for electrically contacting the semiconductor layer, a electrical power source which is electrically conductively connected to the first and the second electrodes for generating an etching current, and a transport apparatus for transporting the workpiece relative to the etching basin such that a semiconductor layer etching face to be etched can be wetted by the electrolyte in the etching basin. The transport apparatus has a negative pressure holding element for the workpiece, designed to position the workpiece on a retaining face of the workpiece opposite to the etching face by negative pressure, and the second electrode is positioned on the negative pressure holding element such that, when the workpiece is positioned on the negative pressure holding element, the retaining face of the workpiece is contacted by the second electrode. A method for etching one side of a semiconductor layer of a workpiece is also provided.

An apparatus for etching one side of a semiconductor layer of a workpiece, including at least one etching basin for receiving an electrolyte, a first electrode which is provided for electrically contacting the electrolyte located in the etching basin, a second electrode which is provided for electrically contacting the semiconductor layer, a electrical power source which is electrically conductively connected to the first and the second electrodes for generating an etching current, and a transport apparatus for transporting the workpiece relative to the etching basin such that a semiconductor layer etching face to be etched can be wetted by the electrolyte in the etching basin. The transport apparatus has a negative pressure holding element for the workpiece, designed to position the workpiece on a retaining face of the workpiece opposite to the etching face by negative pressure, and the second electrode is positioned on the negative pressure holding element such that, when the workpiece is positioned on the negative pressure holding element, the retaining face of the workpiece is contacted by the second electrode. A method for etching one side of a semiconductor layer of a workpiece is also provided.

Systems and methods for electroless plating a first metal onto a second metal in a molten salt bath including: a bath vessel holding a dry salt mixture including a dry salt medium and a dry salt medium of the first metal, and without the reductant therein, the dry salt mixture configured to be heated to form a molten salt bath; and the second metal is configured to be disposed in the molten salt bath and receive a pure coating of the first metal thereon by electroless plating in the molten salt bath, wherein the second metal is more electronegative than the first metal.

Systems and methods for electroless plating a first metal onto a second metal in a molten salt bath including: a bath vessel holding a dry salt mixture including a dry salt medium and a dry salt medium of the first metal, and without the reductant therein, the dry salt mixture configured to be heated to form a molten salt bath; and the second metal is configured to be disposed in the molten salt bath and receive a pure coating of the first metal thereon by electroless plating in the molten salt bath, wherein the second metal is more electronegative than the first metal.

An assembly for electropolishing metal surfaces by means of particles of solid electrolytes in a gaseous environment. According to one embodiment the assembly includes a container and a housing element configured to house at least two metal parts, so as to contain the parts avoiding that they can go out during the electropolish process and at the same time allowing that they can have a given movement within the housing element and at the same time endow them with electrical connectivity by means of a first electrode and a second electrode that are coupled to an electrical source 3. The assembly also includes means to produce a relative movement between the particles of solid electrolytes and the at least two metal parts.

An assembly for electropolishing metal surfaces by means of particles of solid electrolytes in a gaseous environment. According to one embodiment the assembly includes a container and a housing element configured to house at least two metal parts, so as to contain the parts avoiding that they can go out during the electropolish process and at the same time allowing that they can have a given movement within the housing element and at the same time endow them with electrical connectivity by means of a first electrode and a second electrode that are coupled to an electrical source 3. The assembly also includes means to produce a relative movement between the particles of solid electrolytes and the at least two metal parts.

A method and apparatus for the electrochemical removal of material from a surface in which two or more fluid jets or flows are arranged to impinge on the surface of the object and an electrical current flows through one fluid flow path, through the object, and then through a second fluid flow path.