Patent classifications
C30B1/00
Nonlinear Optical Material and Methods of Fabrication
Disclosed is a nonlinear optical (NLO) material for use in deep-UV applications, and methods of fabrication thereof. The NLO is fabricated from a plurality of components according to the formula A.sub.qB.sub.yC.sub.z and a crystallographic non-centrosymmetric (NCS) structure. The NLO material may be fabricated as a polycrystalline or a single crystal material. In an embodiment, the material may be according to a formula Ba.sub.3ZnB.sub.5PO.sub.14.
Method for the production of single crystalline MgTiO3 flakes
The present invention is related to a method for the production of single crystalline MgTiO.sub.3 flakes, in particular in the geikielite crystal structure, to single crystalline MgTiO.sub.3 flakes obtained by this method as well as to the use thereof, in particular as pigments in several application media.
Ultra low noise materials and devices for cryogenic superconductors and quantum bits
Materials, devices, methods of use and fabrication thereof are disclosed. The materials are particularly well suited for application in superconducting devices and quantum computing, due to ability to avoid undesirable effects from inherent noise and decoherence. The materials are formed from select isotopes having zero nuclear spin into a single crystal-phase film or layer of thickness depending on the desired application of the resulting device. The film/layer may be suspended or disposed on a substrate. The isotopes may be enriched from naturally-occurring sources of isotopically mixed elemental material(s). The single crystal is preferably devoid of structural defects such as grain boundaries, inclusions, impurities and lattice vacancies. Device configurations may be formed from the layer according to a predetermined pattern using lithographic and/or milling techniques. An optional protective layer may be deposited on some or all of the device to avoid formation of oxides and/or patinas on surfaces of the device.
Synthesis of metal oxide surfaces and interfaces with crystallographic control using solid-liquid-vapor etching and vapor-liquid-solid growth
The present invention provides integrated nanostructures comprising a single-crystalline matrix of a material A containing aligned, single-crystalline nanowires of a material B, with well-defined crystallographic interfaces are disclosed. The nanocomposite is fabricated by utilizing metal nanodroplets in two subsequent catalytic steps: solid-liquid-vapor etching, followed by vapor-liquid-solid growth. The first etching step produces pores, or negative nanowires within a single-crystalline matrix, which share a unique crystallographic direction, and are therefore aligned with respect to one another. Further, since they are contained within a single, crystalline, matrix, their size and spacing can be controlled by their interacting strain fields, and the array is easily manipulated as a single entityaddressing a great challenge to the integration of freestanding nanowires into functional materials. In the second, growth, step, the same metal nanoparticles are used to fill the pores with single-crystalline nanowires, which similarly to the negative nanowires have unique growth directions, and well-defined sizes and spacings. The two parts of this composite behave synergistically, since this nanowire-filled matrix contains a dense array of well-defined crystallographic interfaces, in which both the matrix and nanowire materials convey functionality to the material. The material of either one of these components may be chosen from a vast library of any material able to form a eutectic alloy with the metal in question, including but not limited to every material thus far grown in nanowire form using the ubiquitous vapor-liquid-solid approach. This has profound implications for the fabrication of any material intended to contain a functional interface, since high interfacial areas and high quality interfacial structure should be expected. Technologies to which this simple approach could be applied include but are not limited to p-n junctions of solar cells, battery electrode arrays, multiferroic materials, and plasmonic materials.
Synthesis of metal oxide surfaces and interfaces with crystallographic control using solid-liquid-vapor etching and vapor-liquid-solid growth
The present invention provides integrated nanostructures comprising a single-crystalline matrix of a material A containing aligned, single-crystalline nanowires of a material B, with well-defined crystallographic interfaces are disclosed. The nanocomposite is fabricated by utilizing metal nanodroplets in two subsequent catalytic steps: solid-liquid-vapor etching, followed by vapor-liquid-solid growth. The first etching step produces pores, or negative nanowires within a single-crystalline matrix, which share a unique crystallographic direction, and are therefore aligned with respect to one another. Further, since they are contained within a single, crystalline, matrix, their size and spacing can be controlled by their interacting strain fields, and the array is easily manipulated as a single entityaddressing a great challenge to the integration of freestanding nanowires into functional materials. In the second, growth, step, the same metal nanoparticles are used to fill the pores with single-crystalline nanowires, which similarly to the negative nanowires have unique growth directions, and well-defined sizes and spacings. The two parts of this composite behave synergistically, since this nanowire-filled matrix contains a dense array of well-defined crystallographic interfaces, in which both the matrix and nanowire materials convey functionality to the material. The material of either one of these components may be chosen from a vast library of any material able to form a eutectic alloy with the metal in question, including but not limited to every material thus far grown in nanowire form using the ubiquitous vapor-liquid-solid approach. This has profound implications for the fabrication of any material intended to contain a functional interface, since high interfacial areas and high quality interfacial structure should be expected. Technologies to which this simple approach could be applied include but are not limited to p-n junctions of solar cells, battery electrode arrays, multiferroic materials, and plasmonic materials.
Nonlinear optical material and methods of fabrication
Disclosed is a nonlinear optical (NLO) material for use in deep-UV applications, and methods of fabrication thereof. The NLO is fabricated from a plurality of components according to the formula A.sub.qB.sub.yC.sub.z and a crystallographic non-centrosymmetric (NCS) structure. The NLO material may be fabricated as a polycrystalline or a single crystal material. In an embodiment, the material may be according to a formula Ba.sub.3ZnB.sub.5PO.sub.14.
Nonlinear optical material and methods of fabrication
Disclosed is a nonlinear optical (NLO) material for use in deep-UV applications, and methods of fabrication thereof. The NLO is fabricated from a plurality of components according to the formula A.sub.qB.sub.yC.sub.z and a crystallographic non-centrosymmetric (NCS) structure. The NLO material may be fabricated as a polycrystalline or a single crystal material. In an embodiment, the material may be according to a formula Ba.sub.3ZnB.sub.5PO.sub.14.
Method for the production of single crystalline TiO2 flakes
The present invention is related to a method for the production of single crystalline TiO.sub.2 flakes in the rutile crystal structure, to single crystalline TiO.sub.2 flakes obtained by this method as well as to the use thereof, especially as pigments in several application media.
FILM ANNEALING APPARATUS AND METHOD
The present disclosure provides a film annealing apparatus and method. The film annealing apparatus includes: a carrying platform configured to carry a substrate formed with a film layer thereon; a heater configured to individually heat respective regions of the film layer such that the film layer is annealed; a carrier detector configured to detect carrier concentrations of the respective regions of the film layer; and a controller electrically connected with the carrier detector and the heater respectively and configured to, according to the carrier concentrations of the respective regions of the film layer detected by the carrier detector, adjust at least one of a heating temperature and a heating time of the heater for heating a corresponding one of the regions of the film layer such that the carrier concentrations of the respective regions of the annealed film layer become the same.
Nonlinear Optical Material and Methods of Fabrication
Disclosed is a nonlinear optical (NLO) material for use in deep-UV applications, and methods of fabrication thereof. The NLO is fabricated from a plurality of components according to the formula A.sub.qB.sub.yC.sub.z and a crystallographic non-centrosymmetric (NCS) structure. The NLO material may be fabricated as a polycrystalline or a single crystal material. In an embodiment, the material may be according to a formula Ba.sub.3ZnB.sub.5PO.sub.14.