This invention relates to the controlled realization of ordered superstructures of octapod-shaped colloidal nanocrystals, formed either in the liquid phase or on a solid substrate. These structures can be applied in many fields of technology.

This invention relates to the controlled realization of ordered superstructures of octapod-shaped colloidal nanocrystals, formed either in the liquid phase or on a solid substrate. These structures can be applied in many fields of technology.

A unitary graphene layer or graphene single crystal containing closely packed and chemically bonded parallel graphene planes having an inter-graphene plane spacing of 0.335 to 0.40 nm and an oxygen content of 0.01% to 10% by weight, which unitary graphene layer or graphene single crystal is obtained from heat-treating a graphene oxide gel at a temperature higher than 100 C., wherein the average mis-orientation angle between two graphene planes is less than 10 degrees, more typically less than 5 degrees. The molecules in the graphene oxide gel, upon drying and heat-treating, are chemically interconnected and integrated into a unitary graphene entity containing no discrete graphite flake or graphene platelet. This graphene monolith exhibits a combination of exceptional thermal conductivity, electrical conductivity, mechanical strength, surface smoothness, surface hardness, and scratch resistance unmatched by any thin-film material of comparable thickness range.

The present invention relates to a multilayer material, comprising a solid substrate coated at least partially with a textured -quartz buffer layer, the crystallographic direction of the -quartz being parallel to the crystallographic direction of the silicon; and on said -quartz buffer layer, a layer of one-dimensional epitaxial ZnO microcrystals (or epitaxial ZnO microwires), said microcrystals being self-assembled. The present invention also relates to a method for producing such a multilayer material, as well as to the industrial use thereof in various technical fields.

The present invention relates to a multilayer material, comprising a solid substrate coated at least partially with a textured -quartz buffer layer, the crystallographic direction of the -quartz being parallel to the crystallographic direction of the silicon; and on said -quartz buffer layer, a layer of one-dimensional epitaxial ZnO microcrystals (or epitaxial ZnO microwires), said microcrystals being self-assembled. The present invention also relates to a method for producing such a multilayer material, as well as to the industrial use thereof in various technical fields.

There is provided a method of crystallizing amorphous silicones, which includes: forming a stacked structure of a second amorphous silicon film followed by a first amorphous silicon film on an underlay film, the second amorphous silicon film having a faster crystal growth rate than the first amorphous silicon film; and performing a crystallization treatment on the stacked structure to crystallize silicones contained in at least the second amorphous silicon film.

A unitary graphene layer or graphene single crystal containing closely packed and chemically bonded parallel graphene planes having an inter-graphene plane spacing of 0.335 to 0.40 nm and an oxygen content of 0.01% to 10% by weight, which unitary graphene layer or graphene single crystal is obtained from heat-treating a graphene oxide gel at a temperature higher than 100 C., wherein the average mis-orientation angle between two graphene planes is less than 10 degrees, more typically less than 5 degrees. The molecules in the graphene oxide gel, upon drying and heat-treating, are chemically interconnected and integrated into a unitary graphene entity containing no discrete graphite flake or graphene platelet. This graphene monolith exhibits a combination of exceptional thermal conductivity, electrical conductivity, mechanical strength, surface smoothness, surface hardness, and scratch resistance unmatched by any thin-film material of comparable thickness range.

A unitary graphene layer or graphene single crystal containing closely packed and chemically bonded parallel graphene planes having an inter-graphene plane spacing of 0.335 to 0.40 nm and an oxygen content of 0.01% to 10% by weight, which unitary graphene layer or graphene single crystal is obtained from heat-treating a graphene oxide gel at a temperature higher than 100 C., wherein the average mis-orientation angle between two graphene planes is less than 10 degrees, more typically less than 5 degrees. The molecules in the graphene oxide gel, upon drying and heat-treating, are chemically interconnected and integrated into a unitary graphene entity containing no discrete graphite flake or graphene platelet. This graphene monolith exhibits a combination of exceptional thermal conductivity, electrical conductivity, mechanical strength, surface smoothness, surface hardness, and scratch resistance unmatched by any thin-film material of comparable thickness range.

There are provided a colloidal crystal having a four-fold symmetric pattern and capable of stably existing even in a geometrically unconstrained space, and a method for producing the same.

The colloidal crystal of the present invention exists in a geometrically unconstrained space and has a four-fold symmetric pattern. The colloidal crystal of the present invention can be produced by filling a dispersion of colloidal particles between a substrate 1 and an opposed plate 2 facing the substrate 1 to precipitate a charged colloidal crystal having a four-fold symmetric pattern (crystallization step S1); and electrostatically adsorbing and immobilizing, onto the substrate 1, the charged colloidal crystal having a four-fold symmetric pattern (immobilization step S2).

There are provided a colloidal crystal having a four-fold symmetric pattern and capable of stably existing even in a geometrically unconstrained space, and a method for producing the same.

The colloidal crystal of the present invention exists in a geometrically unconstrained space and has a four-fold symmetric pattern. The colloidal crystal of the present invention can be produced by filling a dispersion of colloidal particles between a substrate 1 and an opposed plate 2 facing the substrate 1 to precipitate a charged colloidal crystal having a four-fold symmetric pattern (crystallization step S1); and electrostatically adsorbing and immobilizing, onto the substrate 1, the charged colloidal crystal having a four-fold symmetric pattern (immobilization step S2).