C30B7/00

APPARATUS FOR GROWING HYDRATE CRYSTALS

An apparatus for growing hydrate crystals includes a high-pressure-resistant crystallization vessel, a temperature control system, a pressure control system, a data collection system, and a mobile shelf. The apparatus can realize a variety of experimental methods such as the bubble method, the droplet method and the solution growth method by changing the experimental fitting in the high-pressure-resistant crystallization vessel, and thereby-improve the versatility of the device.

ELECTRICALLY CONTROLLED NUCLEATION AND CRYSTALLIZATION
20200306664 · 2020-10-01 ·

Disclosed herein are systems and methods for the controlled crystallization of a compound. The controlled crystallization is achieved by applying an electric field across solutions of target compound and precipitant, whereby the electric field controls the rate of mixing.

MANIPULATION OF FLUIDS AND REACTIONS IN MICROFLUIDIC SYSTEMS
20200269248 · 2020-08-27 ·

Microfluidic structures and methods for manipulating fluids and reactions are provided. Such structures and methods may involve positioning fluid samples, e.g., in the form of droplets, in a carrier fluid (e.g., an oil, which may be immiscible with the fluid sample) in predetermined regions in a microfluidic network. In some embodiments, positioning of the droplets can take place in the order in which they are introduced into the microfluidic network (e.g., sequentially) without significant physical contact between the droplets. Because of the little or no contact between the droplets, there may be little or no coalescence between the droplets. Accordingly, in some such embodiments, surfactants are not required in either the fluid sample or the carrier fluid to prevent coalescence of the droplets. Structures and methods described herein also enable droplets to be removed sequentially from the predetermined regions.

MANIPULATION OF FLUIDS AND REACTIONS IN MICROFLUIDIC SYSTEMS
20200269248 · 2020-08-27 ·

Microfluidic structures and methods for manipulating fluids and reactions are provided. Such structures and methods may involve positioning fluid samples, e.g., in the form of droplets, in a carrier fluid (e.g., an oil, which may be immiscible with the fluid sample) in predetermined regions in a microfluidic network. In some embodiments, positioning of the droplets can take place in the order in which they are introduced into the microfluidic network (e.g., sequentially) without significant physical contact between the droplets. Because of the little or no contact between the droplets, there may be little or no coalescence between the droplets. Accordingly, in some such embodiments, surfactants are not required in either the fluid sample or the carrier fluid to prevent coalescence of the droplets. Structures and methods described herein also enable droplets to be removed sequentially from the predetermined regions.

Method for producing metal oxide nanocrystals, method for producing multi-element oxide nanocrystals, and metal oxide nanocrystals

A method for producing metal oxide nanocrystals, according to the embodiment of the present invention, includes: continuously flowing, into a continuous flow path, one or a plurality of nanocrystal precursor solutions each comprising one or more nanocrystal precursors dissolved in a non-polar solvent; directing a segmenting gas into the continuous flow path to create a segmented reaction flow; flowing the segmented reaction flow into a thermal processor; heating the segmented reaction flow in the thermal processor to create a product flow; and collecting metal oxide nanocrystals from the product flow.

NON-LTR-RETROELEMENT REVERSE TRANSCRIPTASE AND USES THEREOF

A crystal structure of a Non-LTR-retroelement reverse transcriptase and methods of using the same to identify enzymes with improved activity are provided. Mutant reverse transcriptase enzymes and methods of using the same are also provided.

FILM FORMATION APPARATUS AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE

A film formation apparatus is configured to epitaxially grow a film on a surface of a substrate, and the film formation apparatus may include: a stage configured to allow the substrate to be mounted thereon; a heater configured to heat the substrate; a mist supply source configured to supply mist of a solution that comprises a solvent and a material of the film dissolved in the solvent; a heated-gas supply source configured to supply heated gas that comprises gas constituted of a same material as a material of the solvent and has a higher temperature than the mist; and a delivery device configured to deliver the mist and the heated gas to the surface of the substrate.

Multicrystalline silicon ingots, silicon masteralloy, method for increasing the yield of multicrystalline silicon ingots for solar cells

The present invention comprises directionally solidified multicrystalline silicon ingots, a silicon masteralloy for increasing the efficiency of solar cells made from wafers cut from the silicon ingots, method for increasing the yield when producing multicrystalline silicon ingots from a silicon melt by directional solidification. Further the present invention comprises a method for preparing said silicon masteralloy.

Solution deposition method for forming metal oxide or metal hydroxide layer

A solution deposition method includes: applying a liquid precursor solution to a substrate, the precursor solution including an oxide of a first metal, a hydroxide of the first metal, or a combination thereof, dissolved in an aqueous ammonia solution; evaporating the precursor solution to directly form a solid seed layer on the substrate, the seed layer including an oxide of the first metal, a hydroxide of the first metal, or a combination thereof, the seed layer being substantially free of organic compounds; and growing a bulk layer on the substrate, using the seed layer as a growth site or a nucleation site.

Solution deposition method for forming metal oxide or metal hydroxide layer

A solution deposition method includes: applying a liquid precursor solution to a substrate, the precursor solution including an oxide of a first metal, a hydroxide of the first metal, or a combination thereof, dissolved in an aqueous ammonia solution; evaporating the precursor solution to directly form a solid seed layer on the substrate, the seed layer including an oxide of the first metal, a hydroxide of the first metal, or a combination thereof, the seed layer being substantially free of organic compounds; and growing a bulk layer on the substrate, using the seed layer as a growth site or a nucleation site.