Patent classifications
C30B7/00
LIQUID-REPELLENT COATINGS
The invention relates generally to liquid-repellent coatings, and in particular, to porous liquid-repellent coatings, a method of preparing the porous liquid-repellent coatings, and a method of characterizing a porous surface for the liquid-repellent coatings. The invention further relates to a porous liquid-repellent coating comprising a porous layer of a transition metal oxide and/or hydroxide and a layer of a liquid-repellent compound deposited onto the porous layer of the transition metal oxide and/or hydroxide, wherein the porous layer of the transition metal oxide and/or hydroxide is comprised of a plurality of surface pores of varying angles with an average angle that is re-entrant.
DEVICE AND METHOD FOR MANUFACTURING A CRYSTALLINE CONVERSION LAYER FROM A SOLUTION
A device for fabricating a crystalline conversion layer from a growth solution, has a first wall and a substrate defining between them a crystalline growth cavity; a device for inlet/outlet of the solution controlling, over time, at least the supply or extraction of the growth solution to and from the crystalline growth cavity; a heating device creating a temperature profile in the crystalline growth cavity, the substrate or the first wall; the temperature profile controlling a free formation of the crystalline conversion layer over a thickness of greater than 1 micrometer, in a direction mainly transverse to forming face; the whole of the thickness of the crystalline conversion layer being obtained by the free formation of the crystalline conversion layer.
Manipulation of fluids and reactions in microfluidic systems
Microfluidic structures and methods for manipulating fluids and reactions are provided. Such structures and methods may involve positioning fluid samples, e.g., in the form of droplets, in a carrier fluid (e.g., an oil, which may be immiscible with the fluid sample) in predetermined regions in a microfluidic network. In some embodiments, positioning of the droplets can take place in the order in which they are introduced into the microfluidic network (e.g., sequentially) without significant physical contact between the droplets. Because of the little or no contact between the droplets, there may be little or no coalescence between the droplets. Accordingly, in some such embodiments, surfactants are not required in either the fluid sample or the carrier fluid to prevent coalescence of the droplets. Structures and methods described herein also enable droplets to be removed sequentially from the predetermined regions.
Manipulation of fluids and reactions in microfluidic systems
Microfluidic structures and methods for manipulating fluids and reactions are provided. Such structures and methods may involve positioning fluid samples, e.g., in the form of droplets, in a carrier fluid (e.g., an oil, which may be immiscible with the fluid sample) in predetermined regions in a microfluidic network. In some embodiments, positioning of the droplets can take place in the order in which they are introduced into the microfluidic network (e.g., sequentially) without significant physical contact between the droplets. Because of the little or no contact between the droplets, there may be little or no coalescence between the droplets. Accordingly, in some such embodiments, surfactants are not required in either the fluid sample or the carrier fluid to prevent coalescence of the droplets. Structures and methods described herein also enable droplets to be removed sequentially from the predetermined regions.
Systems and methods for continuous-flow laser-induced nucleation
In general, the systems and methods described in this application relate to laser-induced nucleation in continuous flow. A method of laser-induced nucleation in continuous flow includes injecting a saturated solution, undersaturated solution, or supersaturated solution through an inlet of a device. The method can include converting the saturated solution or undersaturated solution into supersaturated solution by changing a temperature of the saturated solution or undersaturated solution. The method can include passing one or more laser pulses through the supersaturated solution within the device. The method can include flowing the saturated solution, undersaturated solution, or the supersaturated solution through an outlet of the device.
Doped nanoparticles and methods of making and using same
Doped nanoparticles, methods of making such nanoparticles, and uses of such nanoparticles. The nanoparticles exhibit a metal-insulator phase transition at a temperature of −200° C. to 350° C. The nanoparticles have a broad range of sizes and various morphologies. The nanoparticles can be used in coatings and in device structures.
Doped nanoparticles and methods of making and using same
Doped nanoparticles, methods of making such nanoparticles, and uses of such nanoparticles. The nanoparticles exhibit a metal-insulator phase transition at a temperature of −200° C. to 350° C. The nanoparticles have a broad range of sizes and various morphologies. The nanoparticles can be used in coatings and in device structures.
Film formation apparatus and method of manufacturing semiconductor device
A film formation apparatus is configured to epitaxially grow a film on a surface of a substrate, and the film formation apparatus may include: a stage configured to allow the substrate to be mounted thereon; a heater configured to heat the substrate; a mist supply source configured to supply mist of a solution that comprises a solvent and a material of the film dissolved in the solvent; a heated-gas supply source configured to supply heated gas that comprises gas constituted of a same material as a material of the solvent and has a higher temperature than the mist; and a delivery device configured to deliver the mist and the heated gas to the surface of the substrate.
Film formation apparatus and film formation method
A film formation apparatus is configured to supply mist of a solution to a surface of a substrate so as to grow a film on the surface of the substrate, and the film formation apparatus may include: a furnace configured to house the substrate so as to heat the substrate; and a mist supply apparatus configured to supply the mist of the solution to the furnace, in which the film formation apparatus includes a portion configured to be exposed to the mist, and at least a part of the portion of the film formation apparatus is constituted of a material comprising boron nitride.
BIPYRAMID-TEMPLATED SYNTHESIS OF MONODISPERSE NOBLE METAL NANOCRYSTALS
Methods for forming samples of noble metal bipyramid nanocrystals having very low size and shape polydispersities from samples of mixed noble metal nanocrystals are provided. The samples include those comprising high purity, substantially monodisperse, plasmonic gold bipyramid nanocrystals. Also provided are methods of growing secondary twinned metal nanocrystals using the noble metal bipyramid nanocrystals as seed particles. Like the seed bipyramid nanocrystals from which they are grown, the secondary nanocrystals are twinned nanocrystals and may also be characterized by very low size and shape polydispersities. Secondary twinned nanocrystals grown by these methods include enlarged metal bipyramid nanocrystals and nanocrystals with anisotropic “dumbbell” shapes having a variety of tip geometries. Methods for using noble metal bipyramid nanocrystals as plasmonic heaters to heat reaction solutions via plasmonic-photothermal radiation-to-heat conversion are also provided.