C30B9/00

METHOD AND APPARATUS FOR PRODUCING CRYSTALLINE CLADDING AND CRYSTALLINE CORE OPTICAL FIBERS
20180203183 · 2018-07-19 ·

We provide methods and apparatus for preparing crystalline-clad and crystalline core optical fibers with minimal or no breakage by minimizing the influence of thermal stress during a liquid phase epitaxy (LPE) process as well as the fiber with precisely controlled number of modes propagated in the crystalline cladding and crystalline core fiber via precisely controlling the diameter of crystalline fiber core with under-saturated LPE flux. The resulting crystalline cladding and crystalline core optical fibers are also reported.

Method and apparatus for producing crystalline cladding and crystalline core optical fibers

We provide methods and apparatus for preparing crystalline-clad and crystalline core optical fibers with minimal or no breakage by minimizing the influence of thermal stress during a liquid phase epitaxy (LPE) process as well as the fiber with precisely controlled number of modes propagated in the crystalline cladding and crystalline core fiber via precisely controlling the diameter of crystalline fiber core with under-saturated LPE flux. The resulting crystalline cladding and crystalline core optical fibers are also reported.

Method and apparatus for producing crystalline cladding and crystalline core optical fibers

We provide methods and apparatus for preparing crystalline-clad and crystalline core optical fibers with minimal or no breakage by minimizing the influence of thermal stress during a liquid phase epitaxy (LPE) process as well as the fiber with precisely controlled number of modes propagated in the crystalline cladding and crystalline core fiber via precisely controlling the diameter of crystalline fiber core with under-saturated LPE flux. The resulting crystalline cladding and crystalline core optical fibers are also reported.

Method for separating group 13 element nitride layer, and composite substrate

A composite substrate includes a sapphire substrate and a layer of a nitride of a group 13 element provided on the sapphire substrate. The layer of the nitride of the group 13 element is composed of gallium nitride, aluminum nitride or gallium aluminum nitride. The composite substrate satisfies the following formulas (1), (2) and (3). A laser light is irradiated to the composite substrate from the side of the sapphire substrate to decompose crystal lattice structure at an interface between the sapphire substrate and the layer of the nitride of the group 13 element. 5.0(an average thickness (m) of the layer of the nitride of the group 13 element/a diameter (mm) of the sapphire substrate)10.0 . . . (1); 0.1 a warpage (mm) of said composite substrate(50/a diameter (mm) of said composite substrate).sup.20.6 . . . (2); 1.10a maximum value (m) of a thickness of said layer of said nitride of said group 13 element/a minimum value (m) of said thickness of said layer of said nitride of said group 13 element . . . (3)

Method for separating group 13 element nitride layer, and composite substrate

A composite substrate includes a sapphire substrate and a layer of a nitride of a group 13 element provided on the sapphire substrate. The layer of the nitride of the group 13 element is composed of gallium nitride, aluminum nitride or gallium aluminum nitride. The composite substrate satisfies the following formulas (1), (2) and (3). A laser light is irradiated to the composite substrate from the side of the sapphire substrate to decompose crystal lattice structure at an interface between the sapphire substrate and the layer of the nitride of the group 13 element. 5.0(an average thickness (m) of the layer of the nitride of the group 13 element/a diameter (mm) of the sapphire substrate)10.0 . . . (1); 0.1 a warpage (mm) of said composite substrate(50/a diameter (mm) of said composite substrate).sup.20.6 . . . (2); 1.10a maximum value (m) of a thickness of said layer of said nitride of said group 13 element/a minimum value (m) of said thickness of said layer of said nitride of said group 13 element . . . (3)

Passivation of nonlinear optical crystals

The passivation of a nonlinear optical crystal for use in an inspection tool includes growing a nonlinear optical crystal in the presence of at least one of fluorine, a fluoride ion and a fluoride-containing compound, mechanically preparing the nonlinear optical crystal, performing an annealing process on the nonlinear optical crystal and exposing the nonlinear optical crystal to a hydrogen-containing or deuterium-containing passivating gas.

Passivation of nonlinear optical crystals

The passivation of a nonlinear optical crystal for use in an inspection tool includes growing a nonlinear optical crystal in the presence of at least one of fluorine, a fluoride ion and a fluoride-containing compound, mechanically preparing the nonlinear optical crystal, performing an annealing process on the nonlinear optical crystal and exposing the nonlinear optical crystal to a hydrogen-containing or deuterium-containing passivating gas.

Method for producing gallium nitride crystal by reacting metal gallium and iron nitride

[Object] To provide a production method capable of producing a gallium nitride crystal at a lower pressure. [Solution] Provided is a method for producing a gallium nitride crystal, the method including a step of heating metal gallium and iron nitride in a nitrogen atmosphere at least to a reaction temperature at which the metal gallium and the iron nitride react.

Method for producing gallium nitride crystal by reacting metal gallium and iron nitride

[Object] To provide a production method capable of producing a gallium nitride crystal at a lower pressure. [Solution] Provided is a method for producing a gallium nitride crystal, the method including a step of heating metal gallium and iron nitride in a nitrogen atmosphere at least to a reaction temperature at which the metal gallium and the iron nitride react.

Production of a GaN bulk crystal substrate and a semiconductor device formed on a GaN bulk crystal substrate

A crystal has a diameter of 1 cm or more and shows a strongest peak in cathode luminescent spectrum at a wavelength of 360 nm in correspondence to a band edge.