A manufacturing method includes providing a material that includes a plurality of particles and a binder that is uncured. The method also includes forming a first article from the material including curing the binder to bind a collection of the particles together into the first article. Furthermore, the method includes encasing at least a portion of the first article with an outer member. The outer member defines an internal cavity that corresponds to the first article. Additionally, the method includes heating the outer member and the first article to melt the collection of particles into a molten mass within the internal cavity of the outer member. Moreover, the method includes solidifying the molten mass within the outer member to form a second article. The second article corresponds to at least a portion of the internal cavity of the outer member.

An indium phosphide single-crystal body has an oxygen concentration of less than 1×10.sup.16 atoms.Math.cm.sup.−3, and includes a straight body portion having a cylindrical shape, wherein a diameter of the straight body portion is more than or equal to 100 mm and less than or equal to 150 mm or is more than 100 mm and less than or equal to 150 mm. An indium phosphide single-crystal substrate has an oxygen concentration of less than 1×10.sup.16 atoms.Math.cm.sup.−13, wherein a diameter of the indium phosphide single-crystal substrate is more than or equal to 100 mm and less than or equal to 150 mm or is more than 100 mm and less than or equal to 150 mm.

Provided is a GaAs ingot with which a GaAs wafer having a carrier concentration of 5.5×10.sup.17 cm.sup.−3 or less and low dislocation density with an average dislocation density of 500/cm.sup.2 or less can be obtained by adding a small amount of In with Si. A seed side end and a center portion of a straight body part of the GaAs ingot each have a silicon concentration of 2.0×10.sup.17 cm.sup.−3 or more and less than 1.5×10.sup.18 cm.sup.−3, an indium concentration of 1.0×10.sup.17cm.sup.−3 or more and less than 6.5×10.sup.18 cm.sup.−3, a carrier concentration of 5.5×10.sup.17 cm.sup.−3 or less, and an average dislocation density of 500/cm.sup.2 or less.

An alloy comprises, by weight: nickel (Ni) as a largest constituent; 6.0% to 7.5% chromium; up to 5.0% cobalt; 5.3% to 6.5% aluminum; up to 5.0% rhenium; 3.7% to 7.0% tungsten; and 3.7% to 7.0% tantalum.

A manufacturing method includes providing a material that includes a plurality of particles and a binder that is uncured. The method also includes forming a first article from the material including curing the binder to bind a collection of the particles together into the first article. Furthermore, the method includes encasing at least a portion of the first article with an outer member. The outer member defines an internal cavity that corresponds to the first article. Additionally, the method includes heating the outer member and the first article to melt the collection of particles into a molten mass within the internal cavity of the outer member. Moreover, the method includes solidifying the molten mass within the outer member to form a second article. The second article corresponds to at least a portion of the internal cavity of the outer member.

The invention provides a growth method for preparing high-yield crystals, belongs to the technical field of single crystal growth. Auxiliary crucibles are arranged on a crucible according to different crystal types and according to the crystal orientation of crystal growth in the main crucible, the relationship between the crystal growth direction and twin crystal orientation. By controlling the angle between the auxiliary crucibles and the main crucible, the relative position between the auxiliary crucibles each other, the auxiliary crucibles realize correction on the crystal orientation of twins generated in the main crucible crystal growth process. The growth method for preparing the high-yield crystals provided by the invention has the following advantages; the crystal orientation change caused by twins is corrected through auxiliary crucibles additionally arranged on the main crucible, and the overall yield is improved for the growth process of the dislocation crystal with large probability; the crucible position can be customized according to the influence of twins on the crystal growth direction, suitable for various crystal preparation processes, improving the yield obviously, reducing the crystal processing difficulty, and improving the material utilization rate.

A method and apparatus for measuring a melt back of a seed in a boule are provided. The method includes lifting a boule once it has been produced using an actuating device onto a support table to automatically manipulate the boule from a furnace to the support table. The melt back of the seed is then automatically measured using a vision system that is installed on an imaging device disposed below the boule.

A method and apparatus for measuring a melt back of a seed in a boule are provided. The method includes lifting a boule once it has been produced using an actuating device onto a support table to automatically manipulate the boule from a furnace to the support table. The melt back of the seed is then automatically measured using a vision system that is installed on an imaging device disposed below the boule.

Methods for purifying reaction precursors used in the synthesis of inorganic compounds and methods for synthesizing inorganic compounds from the purified precursors are provided. Also provided are methods for purifying the inorganic compounds and methods for crystallizing the inorganic compounds from a melt. γ and X-ray detectors incorporating the crystals of the inorganic compounds are also provided.

A crystal-growth apparatus (10, 10’,10”) and a crystal-growth method for growing a crystal (21) from a molten feed material (23) are presented, where in addition to a molten-zone heater, at least one afterheater laser (5) is arranged to heat an extended afterheater zone (50), the afterheater zone (50) at least partly overlapping a solidification zone (210) adjacent to the molten zone (230). The crystal-growth apparatus (10, 10’,10”) and the crystal-growth method may be used for thermal treatment to reduce crack formation or thermal stress in grown crystals (21).