A method for producing a solar crucible includes providing a crucible base body of transparent or opaque fused silica having an inner wall, providing a dispersion containing amorphous SiO.sub.2 particles, applying a SiO.sub.2-containing slip layer to at least a part of the inner wall by using the dispersion, drying the slip layer to form a SiO.sub.2-containing grain layer and thermally densifying the SiO.sub.2-containing grain layer to form a diffusion barrier layer. The dispersion contains a dispersion liquid and amorphous SiO.sub.2 particles that form a coarse fraction and a fine fraction with SiO.sub.2 nanoparticles. The weight percentage of the SiO.sub.2 nanoparticles based on the solids content of the dispersion is in the range between 2 and 15% by weight. The SiO.sub.2-containing grain layer is thermally densified into the diffusion barrier layer through the heating up of the silicon in the crystal growing process.

A crystal of semiconductor material is produced in an apparatus having a crucible with a crucible bottom and a crucible wall, the crucible bottom having a top surface, an underside, and a multitude of openings disposed between the crucible wall and a center of the crucible bottom, and elevations disposed on the top surface and the underside of the crucible bottom; and an induction heating coil disposed below the crucible for melting semiconductor material and stabilizing a melt of semiconductor material covering a growing crystal of semiconductor material. The growth process comprises generating a bed of a semiconductor material feed on the top surface of the crucible bottom and melting semiconductor material on the bed using the induction heating coil.

An apparatus for producing a single crystal of silicon comprises a plate with a top side, an outer edge, and an inner edge, a central opening adjoining the inner edge, and a tube extending from the central opening to beneath the bottom side of the plate; a device for metering granular silicon onto the plate; a first induction heating coil above the plate, provided for melting of the granular silicon deposited; a second induction heating coil positioned beneath the plate, provided for stabilization of a melt of silicon, the melt being present upon a growing single crystal of silicon. The top side of the plate consists of ceramic material and has elevations, the distance between the elevations in a radial direction being not less than 2 mm and not more than 15 mm.

A method of making a component includes: depositing a metallic powder on a workplane; directing a beam from a directed energy source to fuse the powder in a pattern corresponding to a cross-sectional layer of the component; repeating in a cycle the steps of depositing and fusing to build up the component in a layer-by layer fashion; and during the cycle of depositing and melting, using an external heat control apparatus separate from the directed energy source to maintain a predetermined temperature profile of the component, such that the resulting component has a directionally-solidified or single-crystal microstructure.

A method of making a component includes: depositing a metallic powder on a workplane; directing a beam from a directed energy source to fuse the powder in a pattern corresponding to a cross-sectional layer of the component; repeating in a cycle the steps of depositing and fusing to build up the component in a layer-by layer fashion; and during the cycle of depositing and melting, using an external heat control apparatus separate from the directed energy source to maintain a predetermined temperature profile of the component, such that the resulting component has a directionally-solidified or single-crystal microstructure.

A scintillator, a preparation method therefor, and an application thereof are disclosed wherein the scintillator has a chemical formula of Tl.sub.aA.sub.bB.sub.c:yCe, wherein: A is at least one rare earth element selected from trivalent rare earth elements; B is at least one halogen element selected from halogen elements; a=1, b=2 and c=7, a=2, b=1 and c=5, or a=3, b=1 and c=6; and y is greater than or equal to 0 and less than or equal to 0.5. According to another embodiment, the scintillator has a chemical formula of Tl.sub.aA.sub.bB.sub.c:yEu, wherein: A is an alkaline earth metal element; B is a halogen element; a=1, b=2 and c=5, or a=1, b=1 and c=3; and y is greater than or equal to 0 mol % and less than or equal to 50 mol %.

A method for manufacturing a blade, the method includes casting a nickel alloy blade precursor having an airfoil and a root. The airfoil and the root are solution heat treating differently from each other. After the solution heat treating, the root is wrought processed. After the wrought processing, an exterior of the root is machined.

The present invention provides a magnetostrictive member with high performance, high reliability and high versatility. The magnetostrictive member is used in the vibration power generation as a power source for extracting electric energy from various vibrations. The member made of the single crystal is manufactured cheaper than the conventional manufacturing method. The magnetostrictive member is formed by cutting a single crystal of Fe—Ga alloy by using electric discharge machining in a state that <100>orientation of the crystal of the Fe—Ga alloy is aligned in a direction in which magnetostriction of the magnetostrictive member is required.

The present invention provides a magnetostrictive member with high performance, high reliability and high versatility. The magnetostrictive member is used in the vibration power generation as a power source for extracting electric energy from various vibrations. The member made of the single crystal is manufactured cheaper than the conventional manufacturing method. The magnetostrictive member is formed by cutting a single crystal of Fe—Ga alloy by using electric discharge machining in a state that <100>orientation of the crystal of the Fe—Ga alloy is aligned in a direction in which magnetostriction of the magnetostrictive member is required.

An object of this invention is to provide a crucible for growing a sapphire single crystal, which is optimized for providing a sapphire single crystal and is reusable. A crucible for growing a sapphire single crystal of this invention includes: a base material (3) containing molybdenum as a main component and having a crucible shape; and a coating layer (5) with which only an inner periphery of the base material (3) is coated and which is formed of tungsten and inevitable impurities, in which the coating layer (5) has a surface roughness Ra of 5 μm or more and 20 μm or less.