Patent classifications
C30B13/00
GALLIUM OXIDE-DOPED CRYSTALLINE MATERIAL AND PREPARATION METHOD AND APPLICATION THEREOF
A Group VB element doped with a -gallium oxide crystalline material, and a preparation method and application thereof. The series doped with the Ga.sub.2O.sub.3 crystalline material is monoclinic, the space group is C2/m, the resistivity is in the range of 2.010.sup.4 to 110.sup.4.Math.cm, and/or the carrier concentration is in the range of 510.sup.12 to 710.sup.20/cm.sup.3. The preparation method comprises steps of: mixing M.sub.2O.sub.5 and Ga.sub.2O.sub.3 with a purity of 4N or more at molar ratio of (0.000000001-0.01):(0.999999999-0.99); an then performing crystal growth. The present invention can prepare a high-conductivity -Ga.sub.2O.sub.3 crystalline material with n-type conductivity characteristics by conventional processes, providing a basis for applications thereof to electrically powered electronic devices, optoelectronic devices, photocatalysts or conductive substrates.
GALLIUM OXIDE-DOPED CRYSTALLINE MATERIAL AND PREPARATION METHOD AND APPLICATION THEREOF
A Group VB element doped with a -gallium oxide crystalline material, and a preparation method and application thereof. The series doped with the Ga.sub.2O.sub.3 crystalline material is monoclinic, the space group is C2/m, the resistivity is in the range of 2.010.sup.4 to 110.sup.4.Math.cm, and/or the carrier concentration is in the range of 510.sup.12 to 710.sup.20/cm.sup.3. The preparation method comprises steps of: mixing M.sub.2O.sub.5 and Ga.sub.2O.sub.3 with a purity of 4N or more at molar ratio of (0.000000001-0.01):(0.999999999-0.99); an then performing crystal growth. The present invention can prepare a high-conductivity -Ga.sub.2O.sub.3 crystalline material with n-type conductivity characteristics by conventional processes, providing a basis for applications thereof to electrically powered electronic devices, optoelectronic devices, photocatalysts or conductive substrates.
SOLID ELECTROLYTE MATERIAL AND ALL SOLID LITHIUM ION SECONDARY BATTERY
There are provided a solid electrolyte material having high density and ion conductivity, and an all solid lithium ion secondary battery using the solid electrolyte material. The solid electrolyte material has a garnet-related structure which has a chemical composition represented by Li.sub.7-x-yLa.sub.3Zr.sub.2-x-yTa.sub.xNb.sub.yO.sub.12 (0x0.8, 0.2y1, and 0.2x+y1) and relative density of 99% or greater, and belongs to a cubic system. The solid electrolyte material has lithium ion conductivity which is equal to or greater than 1.010.sup.3 S/cm. The solid electrolyte material has a lattice constant a which satisfies 1.28 nma1.30 nm, and has a lithium ion which occupies only two or more 96h sites in a crystal structure. The all solid lithium ion secondary battery includes a positive electrode, a negative electrode, and a solid electrolyte. The solid electrolyte includes the solid electrolyte material.
Laser-heated crystal fiber growth system
A laser heated pedestal growth system includes two lasers having output beams that are combined with a beam combiner to produce a single beam. A growth chamber that includes a final focusing mirror for receiving and focusing the single beam of the lasers onto a tip of a feed material to create a molten zone in a focal region. A feed transport mechanism is adapted for transporting a feed material through the growth chamber and into the molten zone. An opposing seed transport mechanism is adapted for withdrawing a seed material from the growth chamber. An imaging system is adapted for capturing an image of the molten zone within the growth chamber. A controller in communication with the feed transport mechanism, the seed transport mechanism, one of the two lasers, and the imagining system is adapted to control and stabilize a fiber growth process by controlling the feed transport mechanism, the seed transport mechanism, and the power of the combined laser beam.
Laser-heated crystal fiber growth system
A laser heated pedestal growth system includes two lasers having output beams that are combined with a beam combiner to produce a single beam. A growth chamber that includes a final focusing mirror for receiving and focusing the single beam of the lasers onto a tip of a feed material to create a molten zone in a focal region. A feed transport mechanism is adapted for transporting a feed material through the growth chamber and into the molten zone. An opposing seed transport mechanism is adapted for withdrawing a seed material from the growth chamber. An imaging system is adapted for capturing an image of the molten zone within the growth chamber. A controller in communication with the feed transport mechanism, the seed transport mechanism, one of the two lasers, and the imagining system is adapted to control and stabilize a fiber growth process by controlling the feed transport mechanism, the seed transport mechanism, and the power of the combined laser beam.
METHOD AND APPARATUS FOR PRODUCING A SINGLE-CRYSTALLINE WORKPIECE
The application relates to a method for producing or repairing a three-dimensional workpiece, the method including: depositing a sequence of layers of a raw material powder onto a substrate; after depositing a raw material powder layer, irradiating selected areas of the deposited raw material powder layer with an electromagnetic or particle radiation beam in a site selective manner in accordance with an irradiation pattern which corresponds to a geometry of at least part of a layer of the three-dimensional workpiece to be produced, the irradiation pattern including a scan pattern, wherein the substrate has a substantially single-crystalline microstructure; the irradiation is controlled so as to maintain the single-crystalline microstructure and to produce a metallurgical bond between sites of the raw material powder layer that are irradiated and the substrate and/or a previously deposited raw material powder layer, defining the scan pattern, so as to be one of a unidirectional or two directional scan pattern, rotating the scan pattern between two subsequently deposited raw material powder layers by a predetermined angle. The present application also relates to an apparatus for producing or repairing a three-dimensional workpiece.
Polycrystalline silicon rod, production method therefor, and FZ silicon single crystal
A plate-shaped sample with a cross-section perpendicular to a radial direction of a polycrystalline silicon rod as a principal surface is sampled from a region from a center (r=0) of the polycrystalline silicon rod to R/3. Then, the sample is disposed at a position at which a Bragg reflection from a (111) Miller index plane is detected. In-plane rotation with a rotational angle on the sample is performed with a center of the sample as a rotational center such that an X-ray irradiation region defined by a slit performs -scanning on the principal surface of the sample to obtain a diffraction chart indicating dependency of a Bragg reflection intensity from the (111) Miller index plane on a rotational angle of the sample. A ratio (S.sub.p/S.sub.t) between an area S.sub.p of a peak part appearing in the diffraction chart and a total area S.sub.t of the diffraction chart is calculated.
Polycrystalline silicon rod, production method therefor, and FZ silicon single crystal
A plate-shaped sample with a cross-section perpendicular to a radial direction of a polycrystalline silicon rod as a principal surface is sampled from a region from a center (r=0) of the polycrystalline silicon rod to R/3. Then, the sample is disposed at a position at which a Bragg reflection from a (111) Miller index plane is detected. In-plane rotation with a rotational angle on the sample is performed with a center of the sample as a rotational center such that an X-ray irradiation region defined by a slit performs -scanning on the principal surface of the sample to obtain a diffraction chart indicating dependency of a Bragg reflection intensity from the (111) Miller index plane on a rotational angle of the sample. A ratio (S.sub.p/S.sub.t) between an area S.sub.p of a peak part appearing in the diffraction chart and a total area S.sub.t of the diffraction chart is calculated.
Lithium lanthanum zirconium tantalum oxide garnet crystal and all-solid-state lithium ion secondary battery
There are provided a lithium-containing garnet crystal high in density and ionic conductivity, and an all-solid-state lithium ion secondary battery using the lithium-containing garnet crystal. The lithium-containing garnet crystal has a chemical composition represented by Li.sub.7-xLa.sub.3Zr.sub.2-xTa.sub.xO.sub.12 (0.2x1), and has a relative density of 99% or higher, belongs to a cubic system, and has a garnet-related structure. The lithium-containing garnet crystal has a lithium ion conductivity of 1.010.sup.3 S/cm or higher. Further, this solid electrolyte material has a lattice constant a of 1.28 nma1.30 nm, and lithium ions occupy 96h-sites in the crystal structure. The all-solid-state lithium ion secondary battery has a positive electrode, a negative electrode and a solid electrolyte, and the solid electrolyte is constituted of the lithium-containing garnet crystal according to the present invention.
Casting method and cast article
A casting method and cast article are provided. The casting method includes providing a casting furnace, the casting furnace including a withdrawal region in a lower end, positioning a mold within the casting furnace, positioning a molten material in the mold, partially withdrawing the mold a withdrawal distance through the withdrawal region in the casting furnace, the withdrawal distance providing a partially withdrawn portion, then reinserting at least a portion of the partially withdrawn portion into the casting furnace through the withdrawal region, and then completely withdrawing the mold from the casting furnace. The reinserting at least partially re-melts a solidified portion within the partially withdrawn portion to reduce or eliminate freckle grains. The cast article includes a microstructure and occurrence of freckle grains corresponding to being formed by a process comprising partially withdrawing, reinserting, and completely withdrawing of a mold from a casting furnace to form the cast article.