A device for cleaning the inside of a monocrystalline pulling apparatus includes a main tube unit to be inserted into a pull chamber and an inner surface cleaning mechanism that is provided at an upper part of the main tube unit and cleans the inner surface of the pull chamber. The main tube unit includes a retreat/housing section into which a seed chuck provided at the lower end of a wire retreats and which houses the seed chuck therein, and a continuous extension mechanism that is provided at the lower part of the main tube unit and to which a plurality of extension rods are capable of being added and joined. Accordingly, the inner surface of the pull chamber is efficiently cleaned.

A method for producing Si ingot single crystal by NOC growth method including a Si ingot single crystal growing step and a continuous growing step is provided. The growing step includes providing a low temperature region in the Si melt where the Si ingot single crystal is grown along the surface of the Si melt or toward the inside of the Si melt, and the Si ingot single crystal has distribution of a vacancy concentration and an interstitial concentration in which respectively a vacancy concentration and an interstitial concentration vary with a distance from the growth interface; and adjusting a temperature gradient and a growth rate in the Si melt, so that along with the increasing of the distance from the growth interface, the vacancy concentration and the interstitial concentration in the Si ingot single crystal respectively decrease come near to each other.

Methods for producing single crystal silicon ingots by Continuous Czochralski (CCz) are disclosed. A batch of buffer members (e.g., quartz cullets) is added to an outer melt zone of the crucible assembly before the main body of the ingot is grown. In some embodiments, the ratio of the mass M of the batch of buffer members added to the melt to the time between adding the batch of buffer members to the melt and when the ingot main body begins to grow is controlled such that the ratio of M/T is greater than a threshold M/T.

According to the present invention, a resin material that has the following surface concentration of impurities is consistently used in production of polycrystalline silicon. Values obtained from quantitative analysis by ICP-mass spectrometry using a 1 wt % nitric acid aqueous solution as an extraction liquid are: a phosphorous (P) concentration of 50 pptw or less; an arsenic (As) concentration of 2 pptw or less; a boron (B) concentration of 20 pptw or less; an aluminum (Al) concentration of 10 pptw or less; a total concentration of 6 elements of iron (Fe), chromium (Cr), nickel (Ni), copper (Cu), sodium (Na), and zinc (Zn) of 80 pptw or less; a total concentration of 10 elements of lithium (Li), potassium (K), calcium (Ca), titanium (Ti), manganese (Mn), cobalt (Co), molybdenum (Mo), tin (Sn), tungsten (W), and lead (Pb) of 100 pptw or less.

According to the present invention, a resin material that has the following surface concentration of impurities is consistently used in production of polycrystalline silicon. Values obtained from quantitative analysis by ICP-mass spectrometry using a 1 wt % nitric acid aqueous solution as an extraction liquid are: a phosphorous (P) concentration of 50 pptw or less; an arsenic (As) concentration of 2 pptw or less; a boron (B) concentration of 20 pptw or less; an aluminum (Al) concentration of 10 pptw or less; a total concentration of 6 elements of iron (Fe), chromium (Cr), nickel (Ni), copper (Cu), sodium (Na), and zinc (Zn) of 80 pptw or less; a total concentration of 10 elements of lithium (Li), potassium (K), calcium (Ca), titanium (Ti), manganese (Mn), cobalt (Co), molybdenum (Mo), tin (Sn), tungsten (W), and lead (Pb) of 100 pptw or less.

A method for growing a single crystal silicon ingot by the continuous Czochralski method is disclosed. The melt depth and thermal conditions are constant during growth because the silicon melt is continuously replenished as it is consumed, and the crucible location is fixed. The critical v/G is determined by the hot zone configuration, and the continuous replenishment of silicon to the melt during growth enables growth of the ingot at a constant pull rate consistent with the critical v/G during growth of a substantial portion of the main body of the ingot. The continuous replenishment of silicon is accompanied by periodic or continuous nitrogen addition to the melt to result in a nitrogen doped ingot.

A method for growing a single crystal silicon ingot by the continuous Czochralski method is disclosed. The melt depth and thermal conditions are constant during growth because the silicon melt is continuously replenished as it is consumed, and the crucible location is fixed. The critical v/G is determined by the hot zone configuration, and the continuous replenishment of silicon to the melt during growth enables growth of the ingot at a constant pull rate consistent with the critical v/G during growth of a substantial portion of the main body of the ingot. The continuous replenishment of silicon is accompanied by periodic or continuous nitrogen addition to the melt to result in a nitrogen doped ingot.

A method for producing Si ingot single crystal by NOC growth method including a Si ingot single crystal growing step and a continuous growing step is provided. The growing step includes providing a low temperature region in the Si melt where the Si ingot single crystal is grown along the surface of the Si melt or toward the inside of the Si melt, and the Si ingot single crystal has distribution of a vacancy concentration and an interstitial concentration in which respectively a vacancy concentration and an interstitial concentration vary with a distance from the growth interface; and adjusting a temperature gradient and a growth rate in the Si melt, so that along with the increasing of the distance from the growth interface, the vacancy concentration and the interstitial concentration in the Si ingot single crystal respectively decrease come near to each other.

A single crystal manufacturing apparatus to grow a single crystal upward from a seed crystal, the apparatus including an insulated space thermally insulated from a space outside the single crystal manufacturing apparatus, an induction heating coil placed outside the insulated space, a thermal insulation plate that divides the insulated space into a first space including a crystal growth region to grow the single crystal and a second space above the first space and includes a hole above the crystal growth region, a heating element that is placed in the second space and generates heat by induction heating using the induction heating coil to heat the inside of the insulated space, and a support shaft to vertically movably support the seed crystal from below.

Disclosed is an ingot growing apparatus. The ingot growing apparatus according to the embodiment of the present invention includes a growth furnace in which a main crucible is disposed, wherein the main crucible accommodates molten silicon to grow an ingot, a preliminary crucible which receives a solid silicon material, melts the solid silicon material, and supplies molten silicon to the main crucible, a measurement unit which is installed to pass through the growth furnace and measures a change in level of the surface of the molten silicon in the main crucible, and a control unit which controls supply of the molten silicon in the preliminary crucible to the main crucible on the basis of the measured change in the level of the surface of the molten silicon.