The present invention provides an oxide-base scintillator single crystal having an extremely large energy of light emission, adoptable to X-ray CT and radioactive ray transmission inspection apparatus, and more specifically to provide a Pr-containing, garnet-type oxide single crystal, a Pr-containing perovskite-type oxide single crystal, and a Pr-containing silicate oxide single crystal allowing detection therefrom light emission supposedly ascribable to 5d-4f transition of Pr.

In the present invention, as a bag to store polycrystalline silicon ingots, there is used a bag in which the concentration of paraffinic hydrocarbons in a concentrate of solvent-soluble components obtained by Soxhlet extraction using acetone as a solvent is lower than 300 ppmw as a value measured by GC-MS method; the concentration of antioxidants, lower than 10 ppmw; the concentration of ultraviolet absorbents, lower than 5 ppmw; and the concentration of antistatic agents and surfactants, lower than 50 ppmw. Then, when the polycrystalline silicon ingots are packed, preferably, the polycrystalline silicon ingots are put in the storage bag; thereafter, the storage bag is sealed; further, the storage bag is put and sealed in a linear low-density polyethylene bag containing an antistatic agent or a surfactant added in the bag material.

In the present invention, as a bag to store polycrystalline silicon ingots, there is used a bag in which the concentration of paraffinic hydrocarbons in a concentrate of solvent-soluble components obtained by Soxhlet extraction using acetone as a solvent is lower than 300 ppmw as a value measured by GC-MS method; the concentration of antioxidants, lower than 10 ppmw; the concentration of ultraviolet absorbents, lower than 5 ppmw; and the concentration of antistatic agents and surfactants, lower than 50 ppmw. Then, when the polycrystalline silicon ingots are packed, preferably, the polycrystalline silicon ingots are put in the storage bag; thereafter, the storage bag is sealed; further, the storage bag is put and sealed in a linear low-density polyethylene bag containing an antistatic agent or a surfactant added in the bag material.

A method may include stretching a deformable bounding element into a stretched state. The method may further include coating the deformable bounding element with at least one layer of an anti-reflective material while the deformable bounding element is in the stretched state and assembling an optical lens assembly including the deformable bounding element, such that the optical lens assembly adjusts at least one optical property by controlling a shape of the deformable bounding element. The deformable bounding element may have less tension when in a neutral state than the deformable bounding element has when in the stretched state. The method may additionally include coating the deformable bounding element with at least one layer of an anti-reflective material while the deformable bounding element is not in a stretched state. Various other apparatuses, systems, and methods are also disclosed.

A system for growing an ingot from a melt includes an outer crucible, an inner crucible, and a weir. The outer crucible includes a first sidewall and a first base. The first sidewall and the first base define an outer cavity for containing the melt. The inner crucible is located within the outer cavity, and has a central longitudinal axis. The inner crucible includes a second sidewall and a second base having an opening therein. The opening in the second base is concentric with the central longitudinal axis. The weir is disposed between the outer crucible and the inner crucible for supporting the inner crucible.

The invention concerns monocrystalline dislocation-free Ge, n-type doped, and having a resistivity of less than 10 mOhm.Math.cm, characterized in that phosphorus is the single dopant. Such crystals can be obtained by using the Czochralski pulling technique with GeP as dopant.

A method for preparing a single crystal silicon ingot and a wafer sliced therefrom are provided. The ingots and wafers comprise nitrogen at a concentration of at least about 1×10.sup.14 atoms/cm.sup.3 and/or germanium at a concentration of at least about 1×10.sup.19 atoms/cm.sup.3, interstitial oxygen at a concentration of less than about 6 ppma, and a resistivity of at least about 1000 ohm cm.

The present invention relates to a method and apparatus for growing sapphire single crystals, and more particularly to a method and apparatus for growing sapphire single crystals in which a high quality, long single crystal can be obtained within a short period of time upon the use of a long rectangular crucible and a long seed crystal extending in a c-axial direction. Use of the method and apparatus for growing sapphire single crystals according to the present invention can uniformly maintain the horizontal temperature at the inside of the crucible despite the use of a rectangular crucible, thereby obtaining a high-quality single crystal as well decreasing the possibility of a failure in the growth of the single crystal.

The present invention relates to a method and apparatus for growing sapphire single crystals, and more particularly to a method and apparatus for growing sapphire single crystals in which a high quality, long single crystal can be obtained within a short period of time upon the use of a long rectangular crucible and a long seed crystal extending in a c-axial direction. Use of the method and apparatus for growing sapphire single crystals according to the present invention can uniformly maintain the horizontal temperature at the inside of the crucible despite the use of a rectangular crucible, thereby obtaining a high-quality single crystal as well decreasing the possibility of a failure in the growth of the single crystal.

Spatial coordinates of multiple points on an inner surface of a vitreous silica crucible are measured prior to filling raw material in the vitreous silica crucible, and a three-dimensional shape of the inner surface of the vitreous silica crucible using a combination of polygons having vertex coordinates constituted by the respective measured points is specified (S11); a predictive value of an initial liquid surface level of the silicon melt in the vitreous silica crucible is preset (S12); a volume of the silicon melt satisfying the predictive value of the initial liquid surface level is obtained based on the three-dimensional shape of the inner surface of the vitreous silica crucible (S13); a weight of the silicon melt having the volume is obtained (S14); raw material having the weight is filled in the vitreous silica crucible (S15); a dipping control of the seed crystal is performed based on the predictive value of the initial liquid surface level (S17).