A single crystal diamond having a half width of an x-ray diffraction rocking curve of 20 seconds or less, a half width of a peak at a Raman shift of 1332 cm.sup.?1 to 1333 cm.sup.?1 (inclusive) in a Raman spectroscopic spectrum of 2.0 cm.sup.?1 or less, an etch pit density of 10,000/cm.sup.2 or less, a content of nitrogen based on number of atoms of 0.0001-0.1 ppm (inclusive), and a content of .sup.13C based on number of atoms of 0.01-1.0% (inclusive).

A single crystal diamond having a half width of an x-ray diffraction rocking curve of 20 seconds or less, a half width of a peak at a Raman shift of 1332 cm.sup.?1 to 1333 cm.sup.?1 (inclusive) in a Raman spectroscopic spectrum of 2.0 cm.sup.?1 or less, an etch pit density of 10,000/cm.sup.2 or less, a content of nitrogen based on number of atoms of 0.0001-0.1 ppm (inclusive), and a content of .sup.13C based on number of atoms of 0.01-1.0% (inclusive).

Using processes disclosed herein, materials and structures are created and used. For example, processes can include melting amorphous carbon doped with nitrogen and carbon-13 into an undercooled state followed by quenching. Materials disclosed herein may include dopants in concentrations exceeding thermodynamic solubility limits.

Using processes disclosed herein, materials and structures are created and used. For example, processes can include melting amorphous carbon doped with nitrogen and carbon-13 into an undercooled state followed by quenching. Materials disclosed herein may include dopants in concentrations exceeding thermodynamic solubility limits.

A process for producing a cube textured foil is described. The process includes providing a cube textured metal foil M. The process further includes electroplating an epitaxial layer of an alloy on the foil M, whereby the epitaxial layer substantially replicates the cube texture of the metal foil M. The process further includes electroplating a non-epitaxial layer of an alloy on the epitaxial layer. The process further includes separating the electroplated alloy from the cube textured metal foil M to obtain an electro-formed alloy with one cube textured surface.

A process for producing a cube textured foil is described. The process includes providing a cube textured metal foil M. The process further includes electroplating an epitaxial layer of an alloy on the foil M, whereby the epitaxial layer substantially replicates the cube texture of the metal foil M. The process further includes electroplating a non-epitaxial layer of an alloy on the epitaxial layer. The process further includes separating the electroplated alloy from the cube textured metal foil M to obtain an electro-formed alloy with one cube textured surface.

A single-crystal diamond having an X-ray diffraction rocking curve with a half-width of 20 seconds or less, a peak at a Raman shift in the range of 1332 cm.sup.?1 to 1333 cm.sup.?1 in a Raman spectrum has a half-width of 2.0 cm.sup.?1 or less, the single-crystal diamond has an etch-pit density of 10,000/cm.sup.2 or less, the single-crystal diamond has a nitrogen content in the range of 0.0001 ppm to 0.1 ppm based on the number of atoms, and the single-crystal diamond has a .sup.13C content of less than 0.01% based on the number of atoms.

A single-crystal diamond having an X-ray diffraction rocking curve with a half-width of 20 seconds or less, a peak at a Raman shift in the range of 1332 cm.sup.?1 to 1333 cm.sup.?1 in a Raman spectrum has a half-width of 2.0 cm.sup.?1 or less, the single-crystal diamond has an etch-pit density of 10,000/cm.sup.2 or less, the single-crystal diamond has a nitrogen content in the range of 0.0001 ppm to 0.1 ppm based on the number of atoms, and the single-crystal diamond has a .sup.13C content of less than 0.01% based on the number of atoms.

A solution deposition method includes: applying a liquid precursor solution to a substrate, the precursor solution including an oxide of a first metal, a hydroxide of the first metal, or a combination thereof, dissolved in an aqueous ammonia solution; evaporating the precursor solution to directly form a solid seed layer on the substrate, the seed layer including an oxide of the first metal, a hydroxide of the first metal, or a combination thereof, the seed layer being substantially free of organic compounds; and growing a bulk layer on the substrate, using the seed layer as a growth site or a nucleation site.

A solution deposition method includes: applying a liquid precursor solution to a substrate, the precursor solution including an oxide of a first metal, a hydroxide of the first metal, or a combination thereof, dissolved in an aqueous ammonia solution; evaporating the precursor solution to directly form a solid seed layer on the substrate, the seed layer including an oxide of the first metal, a hydroxide of the first metal, or a combination thereof, the seed layer being substantially free of organic compounds; and growing a bulk layer on the substrate, using the seed layer as a growth site or a nucleation site.