The present disclosure provides semi-insulating single-crystal silicon carbide bulk material and powder which include one polytype single crystal. The semi-insulating single-crystal silicon carbide bulk material has silicon vacancy inside, wherein the silicon-vacancy concentration is greater than 5E11 cm{circumflex over ( )}−3.

The reaction chamber (100) is designed for a reactor (100) for deposition of layers of semiconductor material on substrates; it comprises a tube (110) and an injector (20) and a holder (30); the tube (110) is made of quartz and has a cylindrical or prismatic shape and surrounds a reaction and deposition zone; the injector (20) is arranged to inject precursor gases into the reaction and deposition zone; the holder (30) is arranged to support a substrate in the reaction and deposition zone during deposition processes; graphite susceptor elements (10, 40, 50) are located inside the tube (110) for heating the reaction and deposition zone and components inside the reaction and deposition zone; an inductor system (60, 70) is located outside the tube (110) for providing energy to the susceptor elements (10, 40, 50) by electromagnetic induction; a rotating element (80) in the form of a cylindrical or prismatic tube is located inside the reaction and deposition zone and surrounds the injector (20).

The present disclosure provides a manufacturing method of semi-insulating single-crystal silicon carbide powder comprising: providing a semi-insulating single-crystal silicon carbide bulk, wherein the semi-insulating single-crystal silicon carbide bulk has a first silicon-vacancy concentration, and the first silicon-vacancy concentration is greater than 5E11 cm{circumflex over ( )}−3; refining the semi-insulating single-crystal silicon carbide bulk to obtain a semi-insulating single-crystal silicon carbide coarse particle, wherein the semi-insulating single-crystal silicon carbide coarse particle has a second silicon-vacancy concentration and a first particle diameter, the second silicon-vacancy concentration is greater than 5E11 cm{circumflex over ( )}−3, and the first particle diameter is between 50 μm and 350 μm; self-impacting the semi-insulating single-crystal silicon carbide coarse particle to obtain a semi-insulating single-crystal silicon carbide powder, wherein the semi-insulating single-crystal silicon carbide powder has a third silicon-vacancy concentration and a second particle diameter, the third silicon-vacancy concentration is greater than 5E11 cm{circumflex over ( )}−3, and the second particle diameter is between 1 μm and 50 μm.

A method of manufacturing a silicon carbide ingot, includes a preparing operation of adjusting internal space of a reactor in which silicon carbide raw materials and a seed crystal are disposed to have a high vacuum atmosphere, a proceeding operation of injecting an inert gas into the internal space, heating the internal space by moving a heater surrounding the reactor to induce the silicon carbide raw materials to sublimate, and growing the silicon carbide ingot on the seed crystal, and a cooling operation of cooling the temperature of the internal space to room temperature. The moving of the heater has a relative position which becomes more distant at a rate of 0.1 mm/hr to 0.48 mm/hr based on the seed crystal.

Provided is a stable CdZnTe monocrystalline substrate having a small leakage current even when a high voltage is applied and having a lower variation in resistivity with respect to variations in applied voltage values. A semiconductor wafer comprising a cadmium zinc telluride monocrystal having a zinc concentration of 4.0 at % or more and 6.5 at % or less and a chlorine concentration of 0.1 ppm by mass or more and 5.0 ppm by mass or less, wherein the semiconductor wafer has a resistivity of 1.0×10.sup.7 Ωcm or more and 1.0×10.sup.8 Ωcm or less when a voltage of 900 V is applied, and wherein a ratio (variation ratio) of the resistivity at application of 0 V to the resistivity at application of a voltage of 900 V is 20% or less.

Organosilicon chemistry, polymer derived ceramic materials, and methods. Such materials and methods for making polysilocarb (SiOC) and Silicon Carbide (SiC) materials having 3-nines, 4-nines, 6-nines and greater purity. Processes and articles utilizing such high purity SiOC and SiC.

Organosilicon chemistry, polymer derived ceramic materials, and methods. Such materials and methods for making polysilocarb (SiOC) and Silicon Carbide (SiC) materials having 3-nines, 4-nines, 6-nines and greater purity. Processes and articles utilizing such high purity SiOC and SiC.

The present invention provides an optical ZnS material and a preparation method thereof, wherein the preparation method comprises: charging zinc and sulfur into a first crucible and a feeding device of a chemical vapor deposition furnace, respectively; heating the first crucible, the second crucible and a deposition chamber, and charging sulfur into the second crucible through the feeding device; introducing an inert carrier gas into the first crucible, and introducing an inert carrier gas and hydrogen into the second crucible, flowing the carrier gas containing zinc vapor and sulfur vapor respectively into the deposition chamber through pipelines to deposit ZnS, and supplying the second crucible with sulfur regularly and quantitatively through the feeding device during the deposition process to maintain a saturated vapor pressure of sulfur in a range of 0.8 to 1.8 KPa. The preparation method of the present invention does not generate H.sub.2S; thus it can avoid the formation of hydrogen-zinc complexes by H ions produced from the decomposition of H.sub.2S and Zn vapor, which would otherwise affect the transmittance and emissivity of ZnS material. (FIG. 4B)

Provided is a method of preparing an SnSe thermoelectric material including (a) heating a mixture including Sn.sup.2+ and Se.sup.2−, (b) cooling the mixture at a cooling rate greater than 0 and equal to or less than 3 K/h, and forming single crystal Sn.sub.1−xSe (where 0<x<1), and an SnSe thermoelectric material prepared thereby and including Sn vacancies.

A metal oxide film containing a crystal part is provided. Alternatively, a metal oxide film with highly stable physical properties is provided. Alternatively, a metal oxide film with improved electrical characteristics is provided. Alternatively, a metal oxide film with which field-effect mobility can be increased is provided. A metal oxide film including In, M (M is Al, Ga, Y, or Sn), and Zn includes a first crystal part and a second crystal part; the first crystal part has c-axis alignment; the second crystal part has no c-axis alignment; and the existing proportion of the second crystal part is higher than the existing proportion of the first crystal part.