[Object] To provide a thin plate-shaped single-crystal production equipment and a thin plate-shaped single-crystal production method that can produce a thin plate-shaped single crystal having a uniform dopant concentration at an optimum chemical composition and a thickness of several hundreds of micrometers continuously at low cost with high precision even when the single crystal is a single crystal of an incongruent melting material or a solid solution material or a single crystal of a congruent melting material.

[Solution] Thin plate-shaped single-crystal production equipment includes: an infrared ray irradiation apparatus that irradiates an upper surface of a raw material lump for production of a thin plate-shaped single crystal with an infrared ray to melt the upper surface; and an elevator apparatus that causes a lower surface of a thin plate-shaped seed single crystal to be immersed in a melt melted using the infrared ray irradiation apparatus and formed on the upper surface and then pulls the thin plate-shaped seed single crystal immersed in the melt upward. The thin plate-shaped single-crystal production equipment is configured such that, by using the elevator apparatus to immerse the lower surface of the thin plate-shaped seed single crystal in the melt formed on the upper surface of the raw material lump for the production of the thin plate-shaped single crystal using the infrared ray irradiation apparatus, growth of a single crystal is started from the lower surface of the immersed thin plate-shaped seed single crystal and that, by using the elevator apparatus to pull the thin plate-shaped seed single crystal upward, the thin plate-shaped single crystal is produced continuously.

A manufacturing method for a group-III nitride crystal, the manufacturing method includes: preparing a seed substrate; increasing temperature of the seed substrate placed in a nurturing chamber; and supplying a group-III element oxide gas produced in a raw material chamber connected to the nurturing chamber by a connecting pipe and a nitrogen element-containing gas into the nurturing chamber to grow a group-III nitride crystal on the seed substrate, wherein a flow amount y of a carrier gas supplied into the raw material chamber at the temperature increase step satisfies following two relational equations (I) and (II), y<[1−k*H(Ts)]/[k*H(Ts)−j*H(Tg)]j*H(Tg)*t (I), y≥1.58*10.sup.−4*(22.4/28)S*F(N)/F(T) (II), wherein k represents an arrival rate to a saturated vapor pressure of a group-III element in the raw material chamber, Ts represents a temperature of the raw material chamber, Tg represents a temperature of the nurturing chamber, H(Ts) represents a saturated vapor pressure of the group-III element at the temperature Ts in the raw material chamber, H(Tg) represents a saturated vapor pressure of the group-III element at the temperature Tg in the nurturing chamber, j represents a corrective coefficient, t represents a sum of gas flow amounts flowing into the nurturing chamber from those other than the raw material chamber, S represents a cross-sectional area of the connecting pipe, F(N) represents a volumetric flow amount of the nitrogen element-containing gas supplied into the nurturing chamber, and F(T) represents a sum of volumetric flow amounts of gases supplied into the nurturing chamber from those other than the raw material chamber.

Disclosed herein is a method of producing a substrate having a wrinkle pattern of a single-layer rhenium disulfide (ReS.sub.2) nanoflakes deposited thereon. The method is characterized by using ammonium rhenium and sulfur powders as the rhenium source and the sulfur source, respectively; and with the addition of molecular sieve to control the release of the rhenium source during the deposition of ReS.sub.2, in which a single layer of ReS.sub.2 is deposited on a substrate via chemical vapor deposition. The single-layer ReS.sub.2 is then exposed to UV light to induce the formation of a wrinkle pattern.

A silicon carbide single crystal wafer and a preparation method therefor, a silicon carbide crystal and a preparation method therefor, and a semiconductor device. The surface of the silicon carbide single crystal wafer is such that an included angle between a normal direction and a c direction is 0-8 degrees, and aggregated dislocations on the silicon carbide single crystal wafer are less than 300/cm.sup.2; the aggregated dislocation is a dislocation aggregated condition in which the distance between the geometric centers of any two corrosion pits in the corrosion pits obtained after corrosion of melted KOH is less than 80 microns. Even if the dislocation density is relatively high, the aggregated dislocation density is relatively small, thereby increasing the yield of a silicon carbide-based devices.

A method of single crystal growth includes disposing a polycrystalline source material in a chamber of a single crystal growth apparatus, disposing a seed layer in the chamber of the single crystal growth apparatus, wherein the seed layer is fixed below a lid of the single crystal growth apparatus, heating the polycrystalline source material by a heater of the single crystal growth apparatus to deposit a semiconductor material layer on the seed layer, and after depositing the semiconductor material layer, providing a coolant gas at a backside of the lid to cool down the seed layer and the semiconductor material layer.

A light emitting photonic crystal having an organic light emitting diode and methods of making the same are disclosed. An organic light emitting diode disposed within a photonic structure having a band-gap, or stop-band, allows the photonic structure to emit light at wavelengths occurring at the edges of the band-gap. Photonic crystal structures that provide this function may include materials having a refractive index that varies.

A light emitting photonic crystal having an organic light emitting diode and methods of making the same are disclosed. An organic light emitting diode disposed within a photonic structure having a band-gap, or stop-band, allows the photonic structure to emit light at wavelengths occurring at the edges of the band-gap. Photonic crystal structures that provide this function may include materials having a refractive index that varies.

Scintillators that can support up to 20 MHz count rates, which is significantly faster than the required 100K counts/second needed for single crystal diffractometers and methods for fabricating them.

Embodiments of the present disclosure generally relate to apparatus, systems, and methods for in-situ film growth rate monitoring. A thickness of a film on a substrate is monitored during a substrate processing operation that deposits the film on the substrate. The thickness is monitored while the substrate processing operation is conducted. The monitoring includes directing light in a direction toward a crystalline coupon. The direction is perpendicular to a heating direction. In one implementation, a reflectometer system to monitor film growth during substrate processing operations includes a first block that includes a first inner surface. The reflectometer system includes a light emitter disposed in the first block and oriented toward the first inner surface, and a light receiver disposed in the first block and oriented toward the first inner surface. The reflectometer system includes a second block opposing the first block.

Organosilicon chemistry, polymer derived ceramic materials, and methods. Such materials and methods for making polysilocarb (SiOC) and Silicon Carbide (SiC) materials having 3-nines, 4-nines, 6-nines and greater purity. Processes and articles utilizing such high purity SiOC and SiC.