Quality of a silicon carbide single crystal is improved. A crucible having first and second sides is prepared. A solid source material for growing silicon carbide with a sublimation method is arranged on the first side. A seed crystal made of silicon carbide is arranged on the second side. The crucible is arranged in a heat insulating container. The heat insulating container has an opening facing the second side. The crucible is heated such that the solid source material sublimes. A temperature on the second side is measured through the opening in the heat insulating container. The opening has a tapered inner surface narrowed toward the outside of the heat insulating container.

Quality of a silicon carbide single crystal is improved. A crucible having first and second sides is prepared. A solid source material for growing silicon carbide with a sublimation method is arranged on the first side. A seed crystal made of silicon carbide is arranged on the second side. The crucible is arranged in a heat insulating container. The heat insulating container has an opening facing the second side. The crucible is heated such that the solid source material sublimes. A temperature on the second side is measured through the opening in the heat insulating container. The opening has a tapered inner surface narrowed toward the outside of the heat insulating container.

Provided is a manufacturing method of indium oxide nanorods, including the following steps: providing a temperature furnace divided into a first zone and a second zone; putting an indium metal source in the first zone and putting a substrate in the second zone; modulating a temperature of the first zone to a first temperature and modulating a temperature of the second zone to a second temperature, wherein the first temperature is higher than the second temperature; and inputting argon and oxygen into the temperature furnace when the temperature of the first zone reaches the first temperature and the temperature of the second zone reaches the second temperature, wherein a ratio of argon and oxygen is in a range of 30:1 to 70:1 such that a plurality of indium oxide nanorods are formed on the substrate. An indium oxide nanorod is also provided.

A stack includes a substrate, a magnetic recording layer having a columnar structure, and an interlayer disposed between the substrate and the magnetic recording layer. The columnar structure includes magnetic grains separated by a crystalline segregant or a combination of crystalline and amorphous segregants.

A method is disclosed for producing a high quality bulk single crystal of silicon carbide in a seeded growth system by reducing the separation between a silicon carbide seed crystal and a seed holder until the conductive heat transfer between the seed crystal and the seed holder dominates the radiative heat transfer between the seed crystal and the seed holder over substantially the entire seed crystal surface that is adjacent the seed holder.

A method is disclosed for producing a high quality bulk single crystal of silicon carbide in a seeded growth system by reducing the separation between a silicon carbide seed crystal and a seed holder until the conductive heat transfer between the seed crystal and the seed holder dominates the radiative heat transfer between the seed crystal and the seed holder over substantially the entire seed crystal surface that is adjacent the seed holder.

A vapor conduit for use in an apparatus for bulk vapor phase crystal growth, an apparatus for bulk vapor phase crystal growth, and a process for bulk vapor phase crystal growth are described. The vapor conduit is a flow conduit defining a passage means adapted for transport of vapor from a source volume to a growth volume, wherein a flow restrictor is provided in the passage means between the source volume and the growth volume and wherein the flow conduit further comprises a flow director structured to direct vapor flow downstream of the flow restrictor away from a longitudinal center line of the conduit and for example towards an edge of the conduit.

A group 13 element source, a flux comprising at least one of an alkali metal and an alkaline earth metal, and an additive being liquid at an ambient temperature are placed in a crystal growing vessel. The crystal growing vessel is heated and pressurized under a nitrogen atom-containing gas atmosphere to form a melt containing the group 13 element source, the flux and the additive. Evaporation of the additive is prevented until the flux is melted. The crystal of the nitride of the group 13 element is then grown in the melt.

A single-crystal silicon carbide and a single-crystal silicon carbide wafer of good-quality are disclosed that are low in dislocations, micropipes and other crystal defects and enable high yield and high performance when applied to a device, wherein the ratio of doping element concentrations on opposite sides in the direction of crystal growth of the interface between the seed crystal and the grown crystal is 5 or less and the doping element concentration of the grown crystal in the vicinity of the seed crystal is 2×10.sup.19 cm.sup.−3 to 6×10.sup.20 cm.sup.−3.

A single-crystal silicon carbide and a single-crystal silicon carbide wafer of good-quality are disclosed that are low in dislocations, micropipes and other crystal defects and enable high yield and high performance when applied to a device, wherein the ratio of doping element concentrations on opposite sides in the direction of crystal growth of the interface between the seed crystal and the grown crystal is 5 or less and the doping element concentration of the grown crystal in the vicinity of the seed crystal is 2×10.sup.19 cm.sup.−3 to 6×10.sup.20 cm.sup.−3.