Implementations of the present disclosure generally relate to the fabrication of integrated circuits. More specifically, implementations disclosed herein relate to apparatus, systems, and methods for reducing substrate outgassing. A substrate is processed in an epitaxial deposition chamber for depositing an arsenic-containing material on a substrate and then transferred to a degassing chamber for reducing arsenic outgassing on the substrate. The degassing chamber includes a gas panel for supplying hydrogen, nitrogen, and oxygen and hydrogen chloride or chlorine gas to the chamber, a substrate support, a pump, and at least one heating mechanism. Residual or fugitive arsenic is removed from the substrate such that the substrate may be removed from the degassing chamber without dispersing arsenic into the ambient environment.

The present application is directed to a filter and methods of making the same. The filter includes a block of dielectric material with a top surface including a patterned region, a bottom surface, and side surfaces. The filter also includes a through-hole extending through the block from the top surface to the bottom surface. The through-hole is partially surrounded by the patterned region. The filter also includes a wall extending from the top surface, the wall having an inner surface, an outer surface, and a roof. The bottom surface, side surfaces, outer surface, and roof have a first coating of silver and glass frit. The patterned region, through-hole and inner surface have a second coating of silver and glass frit. The glass frit in the first coating is at least 0.5% greater than the glass frit in the second coating. The application is also directed to a system including a printed circuit board and a filter.

The present application is directed to a filter and methods of making the same. The filter includes a block of dielectric material with a top surface including a patterned region, a bottom surface, and side surfaces. The filter also includes a through-hole extending through the block from the top surface to the bottom surface. The through-hole is partially surrounded by the patterned region. The filter also includes a wall extending from the top surface, the wall having an inner surface, an outer surface, and a roof. The bottom surface, side surfaces, outer surface, and roof have a first coating of silver and glass frit. The patterned region, through-hole and inner surface have a second coating of silver and glass frit. The glass frit in the first coating is at least 0.5% greater than the glass frit in the second coating. The application is also directed to a system including a printed circuit board and a filter.

A coated metal fluoride optic is provided. The coated metal fluoride optic includes an alkaline earth metal fluoride substrate and a coating disposed on at least one surface of the substrate. The coating includes an adhesion layer comprising a fluoride-containing material, a non-densified intermediate layer deposited on the adhesion layer, and a densified capping layer deposited on the intermediate layer.

A coated metal fluoride optic is provided. The coated metal fluoride optic includes an alkaline earth metal fluoride substrate and a coating disposed on at least one surface of the substrate. The coating includes an adhesion layer comprising a fluoride-containing material, a non-densified intermediate layer deposited on the adhesion layer, and a densified capping layer deposited on the intermediate layer.

In a process for producing a silicon single crystal in which carbon is incorporated in order to inhibit crystal defects, provided is a process which easily allows carbon to be mixed and dissolved into a silicon melt. The process for producing a silicon single crystal, which involves allowing a silicon single crystal to grow during its pulling-up from the silicon melt held in a crucible, uses as at least part of a silicon raw material, crushed materials of a polycrystalline silicon rod produced by Siemens process that are obtained by crushing an end of the rod in the vicinity contacting a carbon core wire holding member.

In a process for producing a silicon single crystal in which carbon is incorporated in order to inhibit crystal defects, provided is a process which easily allows carbon to be mixed and dissolved into a silicon melt. The process for producing a silicon single crystal, which involves allowing a silicon single crystal to grow during its pulling-up from the silicon melt held in a crucible, uses as at least part of a silicon raw material, crushed materials of a polycrystalline silicon rod produced by Siemens process that are obtained by crushing an end of the rod in the vicinity contacting a carbon core wire holding member.

A chemical vapor deposition (CVD) reactor includes a resonating cavity configured to receive microwaves. A microwave transparent window positioned in the resonating cavity separates the resonating cavity into an upper zone and a plasma zone. Microwaves entering the upper zone propagate through the microwave transparent window into the plasma zone. A substrate is disposed proximate a bottom of the plasma zone opposite the microwave transparent window. A ring structure, positioned around a perimeter of the substrate in the plasma zone, includes a lower section that extends from the bottom of the resonating cavity toward the microwave transparent window and an upper section on a side of the lower section opposite the bottom of the resonating cavity. The upper section extends radially toward a central axis of the ring structure. A method of microwave plasma CVD growth of a diamond film on the substrate is also disclosed.

The disclosure relates to a method for making semimetal compound of Pt. The semimetal compound is a single crystal material of PtSe.sub.2. The method comprises: placing pure Pt and pure Se in a reacting chamber as reacting materials; evacuating the reacting chamber to be vacuum less than 10 Pa; heating the reacting chamber to a first temperature of 600 degrees Celsius to 800 degrees Celsius and keeping for 24 hours to 100 hours; cooling the reacting chamber to a second temperature of 400 degrees Celsius to 500 degrees Celsius and keeping for 24 hours to 100 hours at a cooling rate of 1 degrees Celsius per hour to 10 degrees Celsius per hour to obtain a crystal material of PtSe.sub.2; and separating the excessive reacting materials from the crystal material of PtSe.sub.2.

The disclosure relates to a method for making semimetal compound of Pt. The semimetal compound is a single crystal material of PtSe.sub.2. The method comprises: placing pure Pt and pure Se in a reacting chamber as reacting materials; evacuating the reacting chamber to be vacuum less than 10 Pa; heating the reacting chamber to a first temperature of 600 degrees Celsius to 800 degrees Celsius and keeping for 24 hours to 100 hours; cooling the reacting chamber to a second temperature of 400 degrees Celsius to 500 degrees Celsius and keeping for 24 hours to 100 hours at a cooling rate of 1 degrees Celsius per hour to 10 degrees Celsius per hour to obtain a crystal material of PtSe.sub.2; and separating the excessive reacting materials from the crystal material of PtSe.sub.2.