C30B25/00

Metal sulfide filled carbon nanotubes and synthesis methods thereof

Filled carbon nanotubes (CNTs) and methods of synthesizing the same are provided. An in situ chemical vapor deposition technique can be used to synthesize CNTs filled with metal sulfide nanowires. The CNTs can be completely and continuously filled with the metal sulfide fillers up to several micrometers in length. The filled CNTs can be easily collected from the substrates used for synthesis using a simple ultrasonication method.

Nanostructured battery active materials and methods of producing same

Methods for producing nanostructures from copper-based catalysts on porous substrates, particularly silicon nanowires on carbon-based substrates for use as battery active materials, are provided. Related compositions are also described. In addition, novel methods for production of copper-based catalyst particles are provided. Methods for producing nanostructures from catalyst particles that comprise a gold shell and a core that does not include gold are also provided.

INTEGRATED CIRCUIT WITH TOPOLOGICAL SEMIMETAL INTERCONNECTS
20230030586 · 2023-02-02 ·

An integrated circuit comprises a first circuit element operably connected to a second circuit element by a nanowire interconnect; wherein the nanowire interconnect comprises molybdenum phosphide (MoP), tungsten phosphide (WP.sub.2), or niobium phosphide (NbP). A nanowire interconnect can be made by providing a template nanowire; providing a phosphine source; producing phosphine from the phosphine source; and contacting the template nanowire with the phosphine. The nanowire interconnect demonstrates low resistance.

SiC member
11597655 · 2023-03-07 · ·

A technology for securing favorable appearance of a SiC member, the SiC member includes: a first SiC layer having a first upper surface having a concavo-convex shape and a first lower surface; and a second SiC layer having a second upper surface and a second lower surface, the second lower surface being in contact with the first upper surface and having a concavo-convex shape corresponding to that of the first upper surface. The second SiC layer has a recess concaved from the second upper surface toward the second lower surface side and a flat bottom surface, and the bottom surface of the recess is placed upward of the second lower surface.

Advanced cooling system using throttled internal cooling passage flow for a window assembly, and methods of fabrication and use thereof

A window assembly heat transfer system is disclosed in which a window member has a selected transparency to monitored or sensed electromagnetic wavelengths. One or more passages are provided in the window member for flowing a single-phase or two-phase heat transfer fluid. A mechanism allows either evaporation or condensation of the fluid and/or balancing of a flow of the fluid within the passages. In one embodiment, the window assembly can be made by producing passages in a top surface of a first single plate, optionally producing passages in a bottom surface of a second single plate and bonding the top surface of the first plate to a bottom surface of a second single plate to form the window member with the passage or passages. In another embodiment, the window assembly can be made by providing a core around which the window member material is grown and thereafter removing the core to produce the passage or passages.

METHOD FOR PREPARING LARGE-SIZE TWO-DIMENSIONAL LAYERED METAL THIOPHOSPHATE CRYSTAL

A method for preparing a large-size two-dimensional layered metal thiophosphate crystal includes the following steps: 1) weighing raw materials of indium spheres, phosphorous lumps and sulfur granules according to a predetermined amount and proportion, mixing them, and using iodine as a transport agent and potassium iodide as a molten salt; 2) adding the raw materials, the iodine and the potassium iodide to a reaction vessel together, and vacuum sealing it under a certain pressure, and then subjecting it to a high-temperature reaction; 3) taking out the products after the reaction, and washing the products to remove the residual iodine and potassium iodide and obtain large-size two-dimensional layered metal thiophosphate crystals. This method is simple and highly efficient.

Method of utilizing a degassing chamber to reduce arsenic outgassing following deposition of arsenic-containing material on a substrate

Implementations of the present disclosure generally relate to the fabrication of integrated circuits. More specifically, implementations disclosed herein relate to apparatus, systems, and methods for reducing substrate outgassing. A substrate is processed in an epitaxial deposition chamber for depositing an arsenic-containing material on a substrate and then transferred to a degassing chamber for reducing arsenic outgassing on the substrate. The degassing chamber includes a gas panel for supplying hydrogen, nitrogen, and oxygen and hydrogen chloride or chlorine gas to the chamber, a substrate support, a pump, and at least one heating mechanism. Residual or fugitive arsenic is removed from the substrate such that the substrate may be removed from the degassing chamber without dispersing arsenic into the ambient environment.

Method of utilizing a degassing chamber to reduce arsenic outgassing following deposition of arsenic-containing material on a substrate

Implementations of the present disclosure generally relate to the fabrication of integrated circuits. More specifically, implementations disclosed herein relate to apparatus, systems, and methods for reducing substrate outgassing. A substrate is processed in an epitaxial deposition chamber for depositing an arsenic-containing material on a substrate and then transferred to a degassing chamber for reducing arsenic outgassing on the substrate. The degassing chamber includes a gas panel for supplying hydrogen, nitrogen, and oxygen and hydrogen chloride or chlorine gas to the chamber, a substrate support, a pump, and at least one heating mechanism. Residual or fugitive arsenic is removed from the substrate such that the substrate may be removed from the degassing chamber without dispersing arsenic into the ambient environment.

Process and manufacture of low-dimensional materials supporting both self-thermalization and self-localization
11651957 · 2023-05-16 · ·

Various articles and devices can be manufactured to take advantage of a what is believed to be a novel thermodynamic cycle in which spontaneity is due to an intrinsic entropy equilibration. The novel thermodynamic cycle exploits the quantum phase transition between quantum thermalization and quantum localization. Preferred devices include a phonovoltaic cell, a rectifier and a conductor for use in an integrated circuit.

METAL SULFIDE FILLED CARBON NANOTUBES AND SYNTHESIS METHODS THEREOF

Filled carbon nanotubes (CNTs) and methods of synthesizing the same are provided. An in situ chemical vapor deposition technique can be used to synthesize CNTs filled with metal sulfide nanowires. The CNTs can be completely and continuously filled with the metal sulfide fillers up to several micrometers in length. The filled CNTs can be easily collected from the substrates used for synthesis using a simple ultrasonication method.