Patent classifications
C30B29/00
EVALUATION METHOD AND MANUFACTURING METHOD OF SiC EPITAXIAL WAFER
A SiC epitaxial wafer including a high-concentration epitaxial layer having an impurity concentration of 1×10.sup.18 cm.sup.−3 or more, and the number or positions of basal plane dislocations included in the high-concentration epitaxial layer have been identified
EVALUATION METHOD AND MANUFACTURING METHOD OF SiC EPITAXIAL WAFER
A SiC epitaxial wafer including a high-concentration epitaxial layer having an impurity concentration of 1×10.sup.18 cm.sup.−3 or more, and the number or positions of basal plane dislocations included in the high-concentration epitaxial layer have been identified
Fluorescent member and light-emitting module
A fluorescent member includes: a wavelength converter including an incidence part on which a light of a light source is incident and an output part from which a converted light subjected to wavelength conversion as a result of excitation by an incident light is output; and a reflecting part provided in at least a portion of a surface of the wavelength converter. The wavelength converter is comprised of a material whereby a degree of scattering of the light of the light source incident via the incidence part and traveling toward the output part is smaller than in the case of a polycrystalline material.
Fluorescent member and light-emitting module
A fluorescent member includes: a wavelength converter including an incidence part on which a light of a light source is incident and an output part from which a converted light subjected to wavelength conversion as a result of excitation by an incident light is output; and a reflecting part provided in at least a portion of a surface of the wavelength converter. The wavelength converter is comprised of a material whereby a degree of scattering of the light of the light source incident via the incidence part and traveling toward the output part is smaller than in the case of a polycrystalline material.
Vertical draw system and method for surface adhesion of crystalline materials
In one embodiment employing a vertical draw apparatus, a method of crystallization growth on a substrate surface of a substrate having a substrate material includes: mounting the substrate to a sample holder with the substrate surface facing a liquid surface of a reservoir disposed in a chamber that provides an ambient temperature; seeding the substrate surface with seed droplets; lowering the substrate surface to the liquid surface of the reservoir; independently controlling a temperature of the substrate and a temperature of the reservoir to produce a temperature difference between the substrate and the reservoir over a period of time for crystallization growth; and retracting the substrate surface from the liquid surface of the reservoir at a draw rate. The draw rate and the temperature difference are selected to grow polycrystalline laminate on the substrate surface. Consistent polycrystalline columnar microstructures are formed with appropriate seeding of the substrate surface.
PREPARATIVE CRYSTALLIZATION OF RECOMBINANT HUMAN INSULIN
The present invention discloses a method for crystallizing recombinant Human Insulin at lab and manufacturing scale in the presence of zinc chloride and sodium chloride mixture, higher concentration of organic solvent (IPA—19 to 25 million) and adjusting the pH to 5.0 at a faster rate (≤5 minutes). The method further comprises adopting procedures wherein the settling time is reduced and the holding temperature is altered in order to facilitate consistent protein crystal formation between 15 μm-30 μm and to increase the robustness of the process.
PREPARATIVE CRYSTALLIZATION OF RECOMBINANT HUMAN INSULIN
The present invention discloses a method for crystallizing recombinant Human Insulin at lab and manufacturing scale in the presence of zinc chloride and sodium chloride mixture, higher concentration of organic solvent (IPA—19 to 25 million) and adjusting the pH to 5.0 at a faster rate (≤5 minutes). The method further comprises adopting procedures wherein the settling time is reduced and the holding temperature is altered in order to facilitate consistent protein crystal formation between 15 μm-30 μm and to increase the robustness of the process.
Organic-inorganic hybrid perovskite nanocrystals and methods of making the same
Organic-inorganic perovskite nanoparticle compositions are described herein. In some embodiments, a nanoparticle composition comprises a layer of organic-inorganic perovskite nanocrystals, the organic-inorganic perovskite nanocrystals comprising surfaces associated with ligands of size unable to incorporate into octahedral corner sites of the perovskite crystal structure.
VERTICAL DRAW SYSTEM AND METHOD FOR SURFACE ADHESION OF CRYSTALLINE MATERIALS
In one embodiment employing a vertical draw apparatus, a method of crystallization growth on a substrate surface of a substrate having a substrate material includes: mounting the substrate to a sample holder with the substrate surface facing a liquid surface of a reservoir disposed in a chamber that provides an ambient temperature; seeding the substrate surface with seed droplets; lowering the substrate surface to the liquid surface of the reservoir; independently controlling a temperature of the substrate and a temperature of the reservoir to produce a temperature difference between the substrate and the reservoir over a period of time for crystallization growth; and retracting the substrate surface from the liquid surface of the reservoir at a draw rate. The draw rate and the temperature difference are selected to grow polycrystalline laminate on the substrate surface. Consistent polycrystalline columnar microstructures are formed with appropriate seeding of the substrate surface.
Dielectric materials using 2D nanosheet network interlayer
The present disclosure provides advantageous composite films/coatings, and improved methods for fabricating such composite films/coatings. More particularly, the present disclosure provides improved methods for fabricating composite films by trapping at least a portion of a layered material (e.g., hexagonal boron nitride sheets/layers) at an interface of a phase separated system and then introducing the layered material to a polymer film. The present disclosure provides for the use of boron nitride layers to increase the properties (e.g., dielectric constant and breakdown voltage) of polymer films. The exemplary films can be produced by an advantageous climbing technique. Exemplary boron nitride films are composed of overlapping boron nitride sheets with a total thickness of about one nanometer, with the film then transferred onto a polymer film, thereby resulting in significant increases in both dielectric and breakdown properties of the polymer film.