A method for producing crystalline -Fe2O3 nanoparticles involving ultrasonic treatment of a solution of an iron (III)-containing precursor and an extract from the seeds of a plant in the family Linaceae. The method involves preparing an aqueous extract from the seeds of a plant in the family Linacae and dropwise addition of the extract to the solution of an iron (III)-containing precursor. The method yields crystalline nanoparticles of -Fe.sub.2O.sub.3 having a spherical morphology with a diameter of 100 nm to 300 nm, a mean surface area of 240 to 250 m.sup.2/g, and a type-II nitrogen adsorption-desorption BET isotherm with a H3 hysteresis loop. A method for the photocatalytic decomposition of organic pollutants using 10 the nanoparticles is disclosed. An antibacterial composition containing the crystalline -Fe.sub.2O.sub.3 nanoparticles is also disclosed.

A method for producing crystalline -Fe2O3 nanoparticles involving ultrasonic treatment of a solution of an iron (III)-containing precursor and an extract from the seeds of a plant in the family Linaceae. The method involves preparing an aqueous extract from the seeds of a plant in the family Linacae and dropwise addition of the extract to the solution of an iron (III)-containing precursor. The method yields crystalline nanoparticles of -Fe.sub.2O.sub.3 having a spherical morphology with a diameter of 100 nm to 300 nm, a mean surface area of 240 to 250 m.sup.2/g, and a type-II nitrogen adsorption-desorption BET isotherm with a H3 hysteresis loop. A method for the photocatalytic decomposition of organic pollutants using 10 the nanoparticles is disclosed. An antibacterial composition containing the crystalline -Fe.sub.2O.sub.3 nanoparticles is also disclosed.

A method of growing a zirconia single crystal includes preparing a mixture of ZrO.sub.2 and Y.sub.2O.sub.3 for growing the zirconia single crystal, charging the raw material and a melting seed in a skull crucible for growing the zirconia single crystal using a high-frequency induction heating device, supplying power to the high-frequency induction heating device to melt the raw material, maintaining an output power of the high-frequency induction heating device to soak the melted raw material, first-elevating an induction coil of the high-frequency induction heating device to produce a seed, second-elevating the induction coil of the high-frequency induction heating device to grow a single crystal, cutting off power to the high-frequency induction heating device when completing growth of the zirconia single crystal, and cooling the zirconia single crystal. The method has excellent physical properties free from low-temperature degradation and thus enables precise machining.

Methods and systems that enable growing a SiGe film at relative high temperature resulting in single crystalline properties and imparting twin crystal structures and/or dislocation to the SiGe film through either in-situ or ex-situ electron-beam irradiation. The various embodiments may maintain (or increase) the Seeback coefficient and electrical conductivity of thermoelectric materials and simultaneously decrease the thermal conductivity of the thermoelectric materials.

An evaluation method including steps of: acquiring profile measurement data on an entire surface in a thickness direction of a mirror-polished wafer; identifying a slice-cutting direction by performing first-order or second-order differentiation on diameter-direction profile measurement data on the wafer to acquire differential profiles at predetermined rotation angles and pitches, and comparing the acquired differential profiles; acquiring x-y grid data by performing first-order or second-order differentiation on profile measurement data at a predetermined pitch in a y-direction at a predetermined interval in an x-direction perpendicular to the y-direction, which is the identified slice-cutting direction; acquiring, from the x-y grid data, a maximum derivative value in an intermediate region including the wafer center in the y-direction and a maximum derivative value in upper-end-side and lower-end-side regions located outside the intermediate region; and judging failure incidence possibility in a device fabrication process based on the maximum derivative values.

An evaluation method including steps of: acquiring profile measurement data on an entire surface in a thickness direction of a mirror-polished wafer; identifying a slice-cutting direction by performing first-order or second-order differentiation on diameter-direction profile measurement data on the wafer to acquire differential profiles at predetermined rotation angles and pitches, and comparing the acquired differential profiles; acquiring x-y grid data by performing first-order or second-order differentiation on profile measurement data at a predetermined pitch in a y-direction at a predetermined interval in an x-direction perpendicular to the y-direction, which is the identified slice-cutting direction; acquiring, from the x-y grid data, a maximum derivative value in an intermediate region including the wafer center in the y-direction and a maximum derivative value in upper-end-side and lower-end-side regions located outside the intermediate region; and judging failure incidence possibility in a device fabrication process based on the maximum derivative values.

The present disclosure relates to UV light sources and/or processing activation in processing chambers, and related apparatus and methods. In one or more embodiments, a processing chamber applicable for semiconductor manufacturing includes a chamber body and a lid. The lid and the chamber body at least partially define an internal volume. The processing chamber further includes a substrate support disposed in a processing volume of the internal volume and a gas inlet fluidly coupled to the chamber body to provide gas to the internal volume. The gas inlet includes one or more UV energy sources for irradiating gas within the inlet prior to the gas entering the processing volume. The one or more UV energy sources comprise a first UV energy source having a first peak wavelength and second UV energy source having a second peak wavelength different from the first wavelength.

The present disclosure relates to UV light sources and/or processing activation in processing chambers, and related apparatus and methods. In one or more embodiments, a processing chamber applicable for semiconductor manufacturing includes a chamber body and a lid. The lid and the chamber body at least partially define an internal volume. The processing chamber further includes a substrate support disposed in a processing volume of the internal volume and a gas inlet fluidly coupled to the chamber body to provide gas to the internal volume. The gas inlet includes one or more UV energy sources for irradiating gas within the inlet prior to the gas entering the processing volume. The one or more UV energy sources comprise a first UV energy source having a first peak wavelength and second UV energy source having a second peak wavelength different from the first wavelength.

Disclosed herein are methods of preparing a composition comprising crystalline biomolecules, for example, crystalline antibodies. In exemplary embodiments, the method comprises forming a fluidized bed of crystalline biomolecules using, for example, a counter-flow centrifuge to exchange buffer and/or to concentrate the crystalline biomolecules in a solution. Also provided are methods of detecting crystalline biomolecules and/or amorphous biomolecules in a sample.

A method of manufacturing a diamond watch crystal wherein the present invention employs multiple techniques to produce the final product. The method of the present invention initiates with a chemical vapor deposition process wherein a high purity graphite is employed as the source substrate. This step further deploys utilization of gases, temperature and an energy source to facilitate formation of a diamond layer on the substrate. The present invention provides alternate energy sources during the chemical vapor deposition such as but not limited to, microwave plasma, direct current plasma, inductively-coupled plasma and hot filament techniques. The method of the present invention further deploys a high pressure high temperature step subsequent the chemical vapor deposition step. These two steps are repeated wherein the initial latter step includes a diamond seed. A final high pressure high temperature step is utilized to remove impurities prior to cutting and polishing.