A method of forming a diamond composite body and the diamond composite body. A first single crystal diamond body is provided, which contains nitrogen and has a uniform strain such that over an area of at least 1×1 mm, at least 90 percent of points display a modulus of strain-induced shift of NV resonance of less than 200 kHz, wherein each point in the area is a resolved region of 50 μm.sup.2. The first single crystal diamond body is treated to convert at least some of the nitrogen to form at least 0.3 ppm nitrogen-vacancy, NV.sup.−, centres. A CVD process is used to grow a second single crystal diamond body on a surface of the first single crystal diamond body. The second single crystal diamond body has an NV concentration less than or equal to 10 times lower than the NV.sup.− concentration in the first single crystal diamond body.

A biomedical implant (16, 18) is formed from magnesium (Mg) single crystal (10). The biomedical implant (16, 18) may be biodegradable. The biomedical implant (16, 18) may be post treated to control the mechanical properties and/or corrosion rate thereof said Mg single crystal (10) without changing the chemical composition thereof. A method of making a Mg single crystal (10) for biomedical applications includes filling a single crucible (12) with more than one chamber with polycrystalline Mg, melting at least a portion of said polycrystalline Mg, and forming more than one Mg single crystal (10) using directional solidification.

There is provided a nitride crystal substrate having a main surface and formed of group-III nitride crystal, wherein N.sub.IR/N.sub.Elec, satisfies formula (1) below, which is a ratio of a carrier concentration N.sub.IR at a center of the main surface relative to a carrier concentration N.sub.Elec: 0.5≤N.sub.IR/N.sub.Elec≤1.5 . . . (1) where N.sub.IR is the carrier concentration on the main surface side of the nitride crystal substrate obtained based on a reflectance of the main surface measured by a reflection type Fourier transform infrared spectroscopy, and N.sub.Elec is the carrier concentration in the nitride crystal substrate obtained based on a specific resistance of the nitride crystal substrate and a mobility of the nitride crystal substrate measured by an eddy current method.

There is provided a nitride crystal substrate having a main surface and formed of group-III nitride crystal, wherein N.sub.IR/N.sub.Elec, satisfies formula (1) below, which is a ratio of a carrier concentration N.sub.IR at a center of the main surface relative to a carrier concentration N.sub.Elec: 0.5≤N.sub.IR/N.sub.Elec≤1.5 . . . (1) where N.sub.IR is the carrier concentration on the main surface side of the nitride crystal substrate obtained based on a reflectance of the main surface measured by a reflection type Fourier transform infrared spectroscopy, and N.sub.Elec is the carrier concentration in the nitride crystal substrate obtained based on a specific resistance of the nitride crystal substrate and a mobility of the nitride crystal substrate measured by an eddy current method.

A method of fabricating a transparent conductor is provided. The method includes forming a nanowire dispersion layer on a substrate, forming a nanowire network layer on the substrate by drying the nanowire dispersion layer, and forming a matrix material layer on the nanowire network layer.

A method of fabricating a transparent conductor is provided. The method includes forming a nanowire dispersion layer on a substrate, forming a nanowire network layer on the substrate by drying the nanowire dispersion layer, and forming a matrix material layer on the nanowire network layer.

Provided is a phosphor in which a first phase and a second phase are three-dimensionally entangled with each other. The phosphor further includes a third phase different from the first phase and the second phase, in a cross-sectional visual field in a predetermined range, an area ratio of the third phase in the phosphor is 0.5% to 3.0%, and at least a part of the third phase is a bridging third phase existing at a position where a part of the first phase and another part of the first phase are bridged.

Provided is a phosphor in which a first phase and a second phase are three-dimensionally entangled with each other. The phosphor further includes a third phase different from the first phase and the second phase, in a cross-sectional visual field in a predetermined range, an area ratio of the third phase in the phosphor is 0.5% to 3.0%, and at least a part of the third phase is a bridging third phase existing at a position where a part of the first phase and another part of the first phase are bridged.

Provided are a structure for producing a high-quality single crystal diamond, and a method for manufacturing the structure for producing diamond. A structure for producing a diamond is composed of a base substrate and an Ir thin film formed on the base substrate. The thermal expansion coefficient of the base substrate is 5 times or less of the thermal expansion coefficient of diamond and the melting point of the base substrate is 700° C. or higher. The peak angle in the X-ray diffraction pattern of the Ir thin film is different from the peak angle in the X-ray diffraction pattern of the base substrate.

The present invention provides a control method to epitaxial growth monolayer graphene, in which a monolayer graphene is epitaxially grown on a non-polar crystal face at arbitrary angle of a non-polar crystal face SiC substrate, thereby utilizing the non-polar crystal face to manipulate the electrical transport properties of graphene. A monolayer graphene having ballistic transport properties can be epitaxially grown at arbitrary angle of non-polar crystal face SiC substrate by the above-mentioned control method.