A SiC single crystal, wherein an atomic arrangement surface on the cut surface cut along the <1-100> direction through the center in plan view and an atomic arrangement surface on the cut surface cut along the <11-20> direction that passes through the center of the plan view and is perpendicular to the <1-100> direction are curved in the same direction.

A SiC single crystal, wherein an atomic arrangement surface on the cut surface cut along the <1-100> direction through the center in plan view and an atomic arrangement surface on the cut surface cut along the <11-20> direction that passes through the center of the plan view and is perpendicular to the <1-100> direction are curved in the same direction.

Silicon carbide (SiC) wafers and related methods are disclosed that include large diameter SiC wafers with wafer shape characteristics suitable for semiconductor manufacturing. Large diameter SiC wafers are disclosed that have reduced deformation related to stress and strain effects associated with forming such SiC wafers. As described herein, wafer shape and flatness characteristics may be improved by reducing crystallographic stress profiles during growth of SiC crystal boules or ingots. Wafer shape and flatness characteristics may also be improved after individual SiC wafers have been separated from corresponding SiC crystal boules. In this regard, SiC wafers and related methods are disclosed that include large diameter SiC wafers with suitable crystal quality and wafer shape characteristics including low values for wafer bow, warp, and thickness variation.

Systems and methods for generating one or more single crystal monolayers from two-dimensional van der Waals crystals are disclosed herein. Example methods include providing a bulk material including a plurality of van der Waals crystal layers, and exfoliating one or more single crystal monolayers of van der Waals crystal from the bulk material by applying a flexible and flat metal tape to a surface of the bulk material. In certain embodiments, the one or more single crystal monolayers can be assembled into an artificial lattice. The present disclosure also provides techniques for manufacturing flexible and flat metal tape for generating one or more single crystal monolayers from two-dimensional van der Waals crystals. The present disclosure also provides compositions for creating a macroscopic artificial lattice. In certain embodiments, the composition can include two or more macroscopic single crystal monolayers adapted from a bulk van der Waals crystal, where the single crystal monolayers are configured for assembly into an artificial lattice based on one or more properties.

Systems and methods for generating one or more single crystal monolayers from two-dimensional van der Waals crystals are disclosed herein. Example methods include providing a bulk material including a plurality of van der Waals crystal layers, and exfoliating one or more single crystal monolayers of van der Waals crystal from the bulk material by applying a flexible and flat metal tape to a surface of the bulk material. In certain embodiments, the one or more single crystal monolayers can be assembled into an artificial lattice. The present disclosure also provides techniques for manufacturing flexible and flat metal tape for generating one or more single crystal monolayers from two-dimensional van der Waals crystals. The present disclosure also provides compositions for creating a macroscopic artificial lattice. In certain embodiments, the composition can include two or more macroscopic single crystal monolayers adapted from a bulk van der Waals crystal, where the single crystal monolayers are configured for assembly into an artificial lattice based on one or more properties.

An electrically conductive GaAs crystal has an atomic concentration of Si more than 1×10.sup.17 cm.sup.−3, wherein density of precipitates having sizes of at least 30 nm contained in the crystal is at most 400 cm.sup.−2. In this case, it is preferable that the conductive GaAs crystal has a dislocation density of at most 2×10.sup.−2 cm.sup.2 or at least 1×10.sup.−3 cm.sup.2.

An electrically conductive GaAs crystal has an atomic concentration of Si more than 1×10.sup.17 cm.sup.−3, wherein density of precipitates having sizes of at least 30 nm contained in the crystal is at most 400 cm.sup.−2. In this case, it is preferable that the conductive GaAs crystal has a dislocation density of at most 2×10.sup.−2 cm.sup.2 or at least 1×10.sup.−3 cm.sup.2.

Provided is a particulate phosphor including a single crystal having a composition represented by a compositional formula (Y.sub.1-x-y-zLu.sub.xGd.sub.yCe.sub.z).sub.3+aAl.sub.5−aO.sub.12 (0≤x≤0.9994, 0≤y≤0.0669, 0.001≤z≤0.004, −0.016≤a≤0.315) and a particle diameter (D50) of not less than 20 μm. Also provided is a light-emitting device including a phosphor-including member that includes the phosphor and a sealing member including a transparent inorganic material sealing the phosphor or a binder including an inorganic material binding particles of the phosphor, and a light-emitting element that emits a blue light for exciting the phosphor.

Provided is a particulate phosphor including a single crystal having a composition represented by a compositional formula (Y.sub.1-x-y-zLu.sub.xGd.sub.yCe.sub.z).sub.3+aAl.sub.5−aO.sub.12 (0≤x≤0.9994, 0≤y≤0.0669, 0.001≤z≤0.004, −0.016≤a≤0.315) and a particle diameter (D50) of not less than 20 μm. Also provided is a light-emitting device including a phosphor-including member that includes the phosphor and a sealing member including a transparent inorganic material sealing the phosphor or a binder including an inorganic material binding particles of the phosphor, and a light-emitting element that emits a blue light for exciting the phosphor.

The present invention discloses a tubular PECVD device for bifacial PERC solar cell. The present invention bifacial PERC solar cell has high photoelectric conversion efficiency, high appearance quality, and high EL yield, and could solve the problems of both scratching and undesirable deposition.